Untitled
Abstract: No abstract text available
Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit DDR SDRAM 8M x 16bit x 4 Banks DDR SDRAM Specification Revision 1.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,
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512Mb
512Mbit
16bit
31/VREF-0
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K4H560838C-TCB3
Abstract: DDR200 DDR266A DDR266B DDR333 k4h560838ctcb3
Text: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.7 - 1 - REV. 0.7 Jan. 31. 2002 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)
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K4H560838C-TCB3
DDR200
DDR266A
DDR266B
DDR333
k4h560838ctcb3
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K4H280838D-TCB3
Abstract: No abstract text available
Text: 128Mb D-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.2 - 1 - REV. 0.3 Jan.31. 2001 128Mb D-die(x4/8) DDR SDRAM 128Mb D-die(x4/8) Revision History Version 0 (November, 2001) - First version for internal review Version 0.1 (December, 2001) - Changed spec. from target to preliminry
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128Mb
K4H280838D-TCB3
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k4h510838d
Abstract: No abstract text available
Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit SDRAM 32M x 16bit x 4 Banks DDR SDRAM Specification Revision 0.0 Apr. 2002 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as
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512Mb
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16bit
31/VREF-0
k4h510838d
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K4H560838C-TCA2
Abstract: K4H560838C-TCB3
Text: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.6 - 1 - REV. 0.7 Jan. 31. 2002 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)
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256Mb
K4H560838C-TCA2
K4H560838C-TCB3
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AK4381
Abstract: AK4385 AK4385VT AKD4385 4385vt
Text: ASAHI KASEI [AK4385] AK4385 108dB 192kHz 24-Bit 2ch ∆Σ DAC GENERAL DESCRIPTION The AK4385 offers the perfect mix for cost and performance based audio systems. Using AKM's multi bit architecture for its modulator the AK4385 delivers a wide dynamic range while preserving linearity for
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AK4385]
AK4385
108dB
192kHz
24-Bit
AK4385
AK4381
AK4385VT
AKD4385
4385vt
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jedec ms-024
Abstract: MS-024-FA ms024 WED416S8030A-S 2Mx16bit
Text: White Electronic Designs WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows
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WED416S8030A-SI
2Mx16x
WED416S8030AxxSI
100MHz)
83MHz)
jedec ms-024
MS-024-FA
ms024
WED416S8030A-S
2Mx16bit
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Untitled
Abstract: No abstract text available
Text: 128Mb D-die x16 DDR SDRAM DDR SDRAM Specification Version 0.5 - 1 - REV. 0.5 Jan. 31. 2002 128Mb D-die(x16) DDR SDRAM Revision History Version 0 (July, 2001) - First version for internal review Version 0.1 (September, 2001) - Changed spec to preliminary version
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128Mb
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mpc560xb bolero
Abstract: MPC5606B CHN 949 transistor BC 247 LINFlex PROTOCOL linflex MPC560xB "Base Station subsystem 30f131 pj 989
Text: Devices Supported: MPC5607B MPC5607BRM Rev. 5 31 Jan 2010 MPC5607B Microcontroller Reference Manual, Rev. 5 Freescale Semiconductor Preliminary—Subject to Change Without Notice 1 Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available
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MPC5607B
MPC560xB
MPC5607BRM
MPC5607B
mpc560xb bolero
MPC5606B
CHN 949
transistor BC 247
LINFlex PROTOCOL
linflex
"Base Station subsystem
30f131
pj 989
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CDA 194
Abstract: jedec mo-142 footprint jedec ms-024 D2863-77 leadframe C7025 ALJ- 1300 footprint WSON leadframe Cu C7025 MO-052 MO-108
Text: Chapter 2 Package Design CHAPTER 2 PACKAGE DESIGN Flammability Rating Oxygen Index Fine-Pitch Ball Grid Array Leadframe Packages Packages and Packing Methodologies Handbook 17 Oct 2008 2-1 Chapter 2 Package Design FLAMMABILITY RATING The UL Rating for all Spansion products is 94 V-0.
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D2863-77,
CDA 194
jedec mo-142 footprint
jedec ms-024
D2863-77
leadframe C7025
ALJ- 1300
footprint WSON
leadframe Cu C7025
MO-052
MO-108
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Untitled
Abstract: No abstract text available
Text: [AK4385] AK4385 108dB 192kHz 24-Bit 2ch ΔΣ DAC GENERAL DESCRIPTION The AK4385 offers the perfect mix for cost and performance based audio systems. Using AKM's multi bit architecture for its modulator the AK4385 delivers a wide dynamic range while preserving linearity for
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AK4385]
AK4385
108dB
192kHz
24-Bit
AK4385
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FM22L16-55-TG
Abstract: FM20L08 FM22L16 256KX16
Text: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
FM22L16,
FM22L16-55-TG
FM22L16-55-TG
FM20L08
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BGA OUTLINE DRAWING
Abstract: mr4a16bmys351
Text: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package
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MR4A16B
20-years
AEC-Q100
MR4A16B
216-bit
MR4A16B,
EST352
BGA OUTLINE DRAWING
mr4a16bmys351
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Untitled
Abstract: No abstract text available
Text: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
rel10
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K4H281638B-TCA2
Abstract: K4H280438B-TCA2 K4H280438B-TLA2 PC200
Text: 128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 May, 1998 - First version for internal review Version 0.1(June, 1998) - Added x4 organization Version 0.2(Sep,1998) 1. Added "Issue prcharge command for all banks of the device" as the fourth step of power-up squence.
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128Mb
K4H281638B-TCA2
K4H280438B-TCA2
K4H280438B-TLA2
PC200
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AK4365
Abstract: AK4367 AK4367VN AKD4367
Text: ASAHI KASEI [AK4367] AK4367 Low Power 24-Bit 2ch DAC with HP-AMP & Output Mixer GENERAL DESCRIPTION The AK4367 is 24bit DAC with built-in Headphone Amplifier. The AK4367 features an analog mixing circuit that allows easy interfacing in mobile phone and portable communication designs. The integrated
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AK4367]
AK4367
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AK4367
24bit
AK4365
20pin
8kHz48kHz
20kHz
AK4367VN
AKD4367
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K4H560838C-TCB3
Abstract: K4H560838C-TCB0 DDR200 DDR266A DDR266B DDR333
Text: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 3. 2001 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)
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K4H560838C-TCB3
K4H560838C-TCB0
DDR200
DDR266A
DDR266B
DDR333
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Untitled
Abstract: No abstract text available
Text: ASAHI KASEI [AK4367] AK4367 Low Power 24-Bit 2ch DAC with HP-AMP & Output Mixer GENERAL DESCRIPTION The AK4367 is 24bit DAC with built-in Headphone Amplifier. The AK4367 features an analog mixing circuit that allows easy interfacing in mobile phone and portable communication designs. The integrated
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AK4367]
AK4367
24-Bit
AK4367
24bit
20pin
48kHz
20kHz
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Untitled
Abstract: No abstract text available
Text: [AK4385] AK4385 108dB 192kHz 24-Bit 2ch ΔΣ DAC 概 要 AK4385はディジタルオーディオ機器用にコストパフォーマンスを求めた24ビットDACです。ΔΣ変調器にはワイ ドダイナミックレンジを実現する新開発のアドバンスト・マルチビット方式を採用しています。内蔵のポストフィル
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AK4385]
AK4385
108dB
192kHz
24-Bit
AK4385ã
192kHzã
16pin
MS0246-J-02
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AK8813VQ
Abstract: No abstract text available
Text: [AK8813 ] ASAHI KASEI AK8813 NTSC/PAL Digital Video Encoder 概要 AK8813 は Digital TV/STB 用途に開発されたデジタルビデオエンコーダです。 ITU-R BT.601 準拠の Y,Cb,Cr 信号を NTSC または PAL のコンポジットビデオ及び Y/C(S-ビデオ)信号にエンコードします。
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AK8813
MS0243-J-03
AK8813VQ
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Untitled
Abstract: No abstract text available
Text: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times
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16-BIT)
10/12/15ns
44-pin,
IDT71V416
194304-bit
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Untitled
Abstract: No abstract text available
Text: IBM0165405B IBM0165405P 1 6 M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time 64ms Standard Power SP Retention Time
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IBM0165405B
IBM0165405P
104ns
504mW
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Untitled
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P ADVANCED 8M x 8 12/11 E D O D R A M Features • 8,388,608 word by 8 bit organization Read-Modity-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
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IBM0165805B
IBM0165805P
104ns
256ms
400fiA)
414mW
SA14-4241
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Untitled
Abstract: No abstract text available
Text: 128Mb DDR SDRAM Target DDR SDRAM Specification Version 0.6 - 1 of 63 - asersM « REV. 0.6 July 1. ’99 128Mb DDR SDRAM Target Revision History Version 0 May, 1998 - First version for internal review Version 0.1 (June, 1998) - Added x4 organization Version 0.2(Sep,1998)
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128Mb
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