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    MS024 Search Results

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    Vishay Sfernice RCMS0249R90FHA22

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    DigiKey RCMS0249R90FHA22 Cut Tape 1,854 1
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    ITW Lumex LCM-S02402DSF

    LCD MOD 48DIG 24X2 TRANS YLW/GRN
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    DigiKey LCM-S02402DSF Bulk 1,000 1
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    Mouser Electronics LCM-S02402DSF 112
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    RS LCM-S02402DSF Bulk 180 11 Weeks 1
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    Bristol Electronics LCM-S02402DSF 24
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    Master Electronics LCM-S02402DSF 355
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    Vishay Sfernice RCMS0245300FHA22

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    DigiKey RCMS0245300FHA22 Cut Tape 1,000 1
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    RCMS0245300FHA22 Ammo Pack 1,000 1,000
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    Vishay Sfernice RCMS0247400FHA22

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    DigiKey RCMS0247400FHA22 Ammo Pack 1,000 1,000
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    RCMS0247400FHA22 Cut Tape 1,000 1
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    Vishay Sfernice RCMS0247R00FHA22

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    DigiKey RCMS0247R00FHA22 Cut Tape 999 1
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    MS024 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit DDR SDRAM 8M x 16bit x 4 Banks DDR SDRAM Specification Revision 1.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


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    PDF 512Mb 512Mbit 16bit 31/VREF-0

    K4H560838C-TCB3

    Abstract: DDR200 DDR266A DDR266B DDR333 k4h560838ctcb3
    Text: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.7 - 1 - REV. 0.7 Jan. 31. 2002 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)


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    PDF 256Mb K4H560838C-TCB3 DDR200 DDR266A DDR266B DDR333 k4h560838ctcb3

    K4H280838D-TCB3

    Abstract: No abstract text available
    Text: 128Mb D-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.2 - 1 - REV. 0.3 Jan.31. 2001 128Mb D-die(x4/8) DDR SDRAM 128Mb D-die(x4/8) Revision History Version 0 (November, 2001) - First version for internal review Version 0.1 (December, 2001) - Changed spec. from target to preliminry


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    PDF 128Mb K4H280838D-TCB3

    k4h510838d

    Abstract: No abstract text available
    Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit SDRAM 32M x 16bit x 4 Banks DDR SDRAM Specification Revision 0.0 Apr. 2002 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as


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    PDF 512Mb 512Mbit 16bit 31/VREF-0 k4h510838d

    K4H560838C-TCA2

    Abstract: K4H560838C-TCB3
    Text: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.6 - 1 - REV. 0.7 Jan. 31. 2002 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)


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    PDF 256Mb K4H560838C-TCA2 K4H560838C-TCB3

    AK4381

    Abstract: AK4385 AK4385VT AKD4385 4385vt
    Text: ASAHI KASEI [AK4385] AK4385 108dB 192kHz 24-Bit 2ch ∆Σ DAC GENERAL DESCRIPTION The AK4385 offers the perfect mix for cost and performance based audio systems. Using AKM's multi bit architecture for its modulator the AK4385 delivers a wide dynamic range while preserving linearity for


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    PDF AK4385] AK4385 108dB 192kHz 24-Bit AK4385 AK4381 AK4385VT AKD4385 4385vt

    jedec ms-024

    Abstract: MS-024-FA ms024 WED416S8030A-S 2Mx16bit
    Text: White Electronic Designs WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows


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    PDF WED416S8030A-SI 2Mx16x WED416S8030AxxSI 100MHz) 83MHz) jedec ms-024 MS-024-FA ms024 WED416S8030A-S 2Mx16bit

    Untitled

    Abstract: No abstract text available
    Text: 128Mb D-die x16 DDR SDRAM DDR SDRAM Specification Version 0.5 - 1 - REV. 0.5 Jan. 31. 2002 128Mb D-die(x16) DDR SDRAM Revision History Version 0 (July, 2001) - First version for internal review Version 0.1 (September, 2001) - Changed spec to preliminary version


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    PDF 128Mb

    mpc560xb bolero

    Abstract: MPC5606B CHN 949 transistor BC 247 LINFlex PROTOCOL linflex MPC560xB "Base Station subsystem 30f131 pj 989
    Text: Devices Supported: MPC5607B MPC5607BRM Rev. 5 31 Jan 2010 MPC5607B Microcontroller Reference Manual, Rev. 5 Freescale Semiconductor Preliminary—Subject to Change Without Notice 1 Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available


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    PDF MPC5607B MPC560xB MPC5607BRM MPC5607B mpc560xb bolero MPC5606B CHN 949 transistor BC 247 LINFlex PROTOCOL linflex "Base Station subsystem 30f131 pj 989

    CDA 194

    Abstract: jedec mo-142 footprint jedec ms-024 D2863-77 leadframe C7025 ALJ- 1300 footprint WSON leadframe Cu C7025 MO-052 MO-108
    Text: ‹ Chapter 2 Package Design CHAPTER 2 PACKAGE DESIGN Flammability Rating Oxygen Index Fine-Pitch Ball Grid Array Leadframe Packages Packages and Packing Methodologies Handbook 17 Oct 2008 2-1 ‹ Chapter 2 Package Design FLAMMABILITY RATING The UL Rating for all Spansion products is 94 V-0.


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    PDF D2863-77, CDA 194 jedec mo-142 footprint jedec ms-024 D2863-77 leadframe C7025 ALJ- 1300 footprint WSON leadframe Cu C7025 MO-052 MO-108

    Untitled

    Abstract: No abstract text available
    Text: [AK4385] AK4385 108dB 192kHz 24-Bit 2ch ΔΣ DAC GENERAL DESCRIPTION The AK4385 offers the perfect mix for cost and performance based audio systems. Using AKM's multi bit architecture for its modulator the AK4385 delivers a wide dynamic range while preserving linearity for


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    PDF AK4385] AK4385 108dB 192kHz 24-Bit AK4385

    FM22L16-55-TG

    Abstract: FM20L08 FM22L16 256KX16
    Text: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


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    PDF FM22L16 256Kx16 512Kx8 40MHz 256Kx16 FM22L16 FM22L16, FM22L16-55-TG FM22L16-55-TG FM20L08

    BGA OUTLINE DRAWING

    Abstract: mr4a16bmys351
    Text: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package


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    PDF MR4A16B 20-years AEC-Q100 MR4A16B 216-bit MR4A16B, EST352 BGA OUTLINE DRAWING mr4a16bmys351

    Untitled

    Abstract: No abstract text available
    Text: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


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    PDF FM22L16 256Kx16 512Kx8 40MHz 256Kx16 FM22L16 rel10

    K4H281638B-TCA2

    Abstract: K4H280438B-TCA2 K4H280438B-TLA2 PC200
    Text: 128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 May, 1998 - First version for internal review Version 0.1(June, 1998) - Added x4 organization Version 0.2(Sep,1998) 1. Added "Issue prcharge command for all banks of the device" as the fourth step of power-up squence.


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    PDF 128Mb K4H281638B-TCA2 K4H280438B-TCA2 K4H280438B-TLA2 PC200

    AK4365

    Abstract: AK4367 AK4367VN AKD4367
    Text: ASAHI KASEI [AK4367] AK4367 Low Power 24-Bit 2ch DAC with HP-AMP & Output Mixer GENERAL DESCRIPTION The AK4367 is 24bit DAC with built-in Headphone Amplifier. The AK4367 features an analog mixing circuit that allows easy interfacing in mobile phone and portable communication designs. The integrated


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    PDF AK4367] AK4367 24-Bit AK4367 24bit AK4365 20pin 8kHz48kHz 20kHz AK4367VN AKD4367

    K4H560838C-TCB3

    Abstract: K4H560838C-TCB0 DDR200 DDR266A DDR266B DDR333
    Text: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 3. 2001 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)


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    PDF 256Mb K4H560838C-TCB3 K4H560838C-TCB0 DDR200 DDR266A DDR266B DDR333

    Untitled

    Abstract: No abstract text available
    Text: ASAHI KASEI [AK4367] AK4367 Low Power 24-Bit 2ch DAC with HP-AMP & Output Mixer GENERAL DESCRIPTION The AK4367 is 24bit DAC with built-in Headphone Amplifier. The AK4367 features an analog mixing circuit that allows easy interfacing in mobile phone and portable communication designs. The integrated


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    PDF AK4367] AK4367 24-Bit AK4367 24bit 20pin 48kHz 20kHz

    Untitled

    Abstract: No abstract text available
    Text: [AK4385] AK4385 108dB 192kHz 24-Bit 2ch ΔΣ DAC 概 要 AK4385はディジタルオーディオ機器用にコストパフォーマンスを求めた24ビットDACです。ΔΣ変調器にはワイ ドダイナミックレンジを実現する新開発のアドバンスト・マルチビット方式を採用しています。内蔵のポストフィル


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    PDF AK4385] AK4385 108dB 192kHz 24-Bit AK4385ã 192kHzã 16pin MS0246-J-02

    AK8813VQ

    Abstract: No abstract text available
    Text: [AK8813 ] ASAHI KASEI AK8813 NTSC/PAL Digital Video Encoder 概要 AK8813 は Digital TV/STB 用途に開発されたデジタルビデオエンコーダです。 ITU-R BT.601 準拠の Y,Cb,Cr 信号を NTSC または PAL のコンポジットビデオ及び Y/C(S-ビデオ)信号にエンコードします。


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    PDF AK8813 MS0243-J-03 AK8813VQ

    Untitled

    Abstract: No abstract text available
    Text: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times


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    PDF 16-BIT) 10/12/15ns 44-pin, IDT71V416 194304-bit

    Untitled

    Abstract: No abstract text available
    Text: IBM0165405B IBM0165405P 1 6 M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time 64ms Standard Power SP Retention Time


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    PDF IBM0165405B IBM0165405P 104ns 504mW

    Untitled

    Abstract: No abstract text available
    Text: IBM0165805B IBM0165805P ADVANCED 8M x 8 12/11 E D O D R A M Features • 8,388,608 word by 8 bit organization Read-Modity-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time


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    PDF IBM0165805B IBM0165805P 104ns 256ms 400fiA) 414mW SA14-4241

    Untitled

    Abstract: No abstract text available
    Text: 128Mb DDR SDRAM Target DDR SDRAM Specification Version 0.6 - 1 of 63 - asersM « REV. 0.6 July 1. ’99 128Mb DDR SDRAM Target Revision History Version 0 May, 1998 - First version for internal review Version 0.1 (June, 1998) - Added x4 organization Version 0.2(Sep,1998)


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    PDF 128Mb