MSC1035M
Abstract: TACAN A 107 transistor TACAN transistor
Text: MSC1035M NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 2L FLG DESCRIPTION: The ASI MSC1035M is Designed for Class C, DME/TACAN Applications up to 1150 MHz. 3 1 2 FEATURES: • Class C Operation • PG = 10.7 dB at 35 W/1150 MHz • Omnigold Metalization System
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MSC1035M
MSC1035M
TACAN
A 107 transistor
TACAN transistor
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tp2304
Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12
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AM1214-100
AM1214-200
AM1214-325
AM80912005
AM80912015
AM80912030
AM80912085
AM80912150
AM81214006
AM81214015
tp2304
TPV3100
TP9383
TP2330
MRF2001
PT9783
PT9780
tp8828f
BLY93A
mrf 406 application circuit
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S068
Abstract: 81035m MSC1035M MSC81035M
Text: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN
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MSC81035M
81035M
MSC81035M
MSC1035M.
S068
81035m
MSC1035M
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81035M
Abstract: MSC81035M MSC1035M MSC1035
Text: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN
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MSC81035M
81035M
MSC81035M
MSC1035M.
81035M
MSC1035M
MSC1035
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MSC1035MP
Abstract: MSC81035MP
Text: MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN
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MSC81035MP
81035MP
MSC81035MP
MSC1035MP.
MSC1035MP
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TPV3100
Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE
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twF150-50F
HF150-50S
HF250-50
HF100-28
HF220-28
HF220-50
TVU014
HF75-50S
ASAT25
ASI4003
TPV3100
TP3024A
HF power amplifier TPV3100
PT9783
MRF466
mrf4070
tp9383
tp2304
mrf433
MRF492A
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594 ph
Abstract: transistor vf12 ana 650 VF11 VF12 MSASC150H45LR VF10 1N6821 1N6821R IR100
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6821 (MSASC150H45L) Features • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability
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1N6821
MSASC150H45L)
1N6821)
1N6821R)
MSASC150H45LR)
msasc150h45
1N6821R
594 ph
transistor vf12
ana 650
VF11
VF12
MSASC150H45LR
VF10
1N6821
1N6821R
IR100
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MSC81035MP
Abstract: MSC1035MP 81035MP
Text: MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN. WITH 10.7 dB GAIN
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MSC81035MP
81035MP
MSC81035MP
MSC1035MP.
MSC1035MP
81035MP
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81035m
Abstract: MSC1035M MSC81035M
Text: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN. WITH 10.7 dB GAIN
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MSC81035M
81035M
MSC81035M
MSC1035M.
81035m
MSC1035M
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1N6821
Abstract: 1N6821R IR100 MSASC150H45L MSASC150H45LR VF10 VF11
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6821 (MSASC150H45L) Features • • • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability
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1N6821
MSASC150H45L)
1N6821)
1N6821R)
MSASC150H45LR)
msasc150h45
1N6821R
1N6821
1N6821R
IR100
MSASC150H45L
MSASC150H45LR
VF10
VF11
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81035MP
Abstract: MSC81035MP MSC1035MP MSC1035
Text: MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN
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MSC81035MP
81035MP
MSC81035MP
MSC1035MP.
81035MP
MSC1035MP
MSC1035
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE
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MSC81035MP
81035MP
MSC81035MP
MSC1035MP.
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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81035M
Abstract: No abstract text available
Text: fry SGS-THOMSON ^ 7# MSC81035M RF & MICROWAVE TRANSISTO RS _ AVIONICS APPLICATIONS • ■ ■ ■ ■ ■ ■ . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED oo:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY
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MSC81035M
81035M
MSC81035M
MSC1035M.
LnCSh11
81035M
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Untitled
Abstract: No abstract text available
Text: fZ 7 S G S - T H O M S O N * 7 / . KfflD» IIL IO T Ê S K i MSC81035M RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS i REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED . o o :1 VSWR CAPABILITY . LOW THERMAL RESISTANCE . INPUT MATCHING
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MSC81035M
81035M
MSC81035M
MSC1035M.
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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