Untitled
Abstract: No abstract text available
Text: ADVANCE I QUANTUM DEVICES INC FLASH MEMORY 256K x 16,512K x 8 FEATURES • Seven erase blocks: - 16KB/8K-word boot block protected - Two 8KB / 4K-word parameter blocks - Four general memory blocks • Low power 100(iA standby; 60mA active, MAX • 5V±10% read; 12V±5% write/erase
|
OCR Scan
|
PDF
|
16KB/8K-word
100ns
100ns
MT28F400
MT28F400
16-bit
MT2BF400
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT28F400 256K x 16, 512K x 8 FLASH MEMORY |U 1I C = R C 3N FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View • Sev en erase blocks: - 1 6 K B /8 K -w o rd b oo t b lo ck (p rotected ) - T w o 8 K B /4 K -w o rd p aram eter b lo ck s
|
OCR Scan
|
PDF
|
MT28F400
100ns
V/12V,
44-Pin
16-bit
MT28F4O0
|