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    TMOS E-FET

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MTV16N50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 16 AMPERES 500 VOLTS RDS on = 0-40 OHM N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


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    PDF MTV16NSOE 0E-05 0E-04 0E-03 0E-02 0E-01 TMOS E-FET