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    MTV32 Price and Stock

    Rochester Electronics LLC MTV32N20E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTV32N20E Bulk 161
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    Motorola Mobility LLC MTV32N20E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MTV32N20E 735 2
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    • 100 $1.359
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    Motorola Semiconductor Products MTV32N20E

    32 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
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    Quest Components MTV32N20E 588
    • 1 $3.9
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    MTV32N20E 72
    • 1 $4.5
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    onsemi MTV32N20E

    32A, 200V, 0.075ohm, N-Channel Power MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTV32N20E 6,325 1
    • 1 $1.8
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    ComSIT USA MTV32N20E 11,838
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    onsemi MTV32N25E

    32A, 250V, 0.08ohm, N-Channel Power MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTV32N25E 20 1
    • 1 $2.23
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    • 100 $2.1
    • 1000 $1.9
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    ComSIT USA MTV32N25E 300
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    MTV32 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTV32-400A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTV32-400A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MTV32-400A SGS-Thomson 3.0A Iout, 400V Vrrm Fast Recovery Rectifier Scan PDF
    MTV32-600A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTV32-600A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MTV32-600A SGS-Thomson 3.0A Iout, 600V Vrrm Fast Recovery Rectifier Scan PDF
    MTV32N20E Motorola TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM Original PDF
    MTV32N20E On Semiconductor 32 Amp D3PAK Surface Mount Products, N-Channel, VDSS 200 Original PDF
    MTV32N20E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTV32N20E/D On Semiconductor TMOS POWER FET 32 AMPERES 200 VOLTS Original PDF
    MTV32N20E-D On Semiconductor TMOS E-FET Power Field Effect Transistor D3PAK for Original PDF
    MTV32N25E On Semiconductor N-Channel Enhancement-Mode Silicon Gate Original PDF
    MTV32N25E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTV32N25E/D On Semiconductor TMOS POWER FET 32 AMPERES 250 VOLTS Original PDF
    MTV32N25E-D On Semiconductor TMOS E-FET Power Field Effect Transistor D3PAK for Original PDF
    MTV32N25E-RL On Semiconductor TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount Original PDF

    MTV32 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mj 1504 transistor

    Abstract: AN569 MTV32N20E SMD310 mj 1504 scheme
    Text: MOTOROLA Order this document by MTV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTV32N20E TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N–Channel Enhancement–Mode Silicon Gate


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    MTV32N20E/D MTV32N20E MTV32N20E/D* mj 1504 transistor AN569 MTV32N20E SMD310 mj 1504 scheme PDF

    mj 1504 transistor

    Abstract: AN569 MTV32N25E SMD310
    Text: MOTOROLA Order this document by MTV32N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount Designer's MTV32N25E TMOS POWER FET 32 AMPERES 250 VOLTS RDS on = 0.08 OHM N–Channel Enhancement–Mode Silicon Gate


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    MTV32N25E/D MTV32N25E MTV32N25E/D* mj 1504 transistor AN569 MTV32N25E SMD310 PDF

    Untitled

    Abstract: No abstract text available
    Text: MTV32N25E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This


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    MTV32N25E MTV32N25E/D PDF

    mj 1504 transistor

    Abstract: mj 1504 scheme MTV32N20E AN569 SMD310 transistor mj 1504
    Text: MOTOROLA Order this document by MTV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E−FET. Power Field Effect Transistor D3PAK for Surface Mount MTV32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N−Channel Enhancement−Mode Silicon Gate


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    MTV32N20E/D MTV32N20E MTV32N20E/D* mj 1504 transistor mj 1504 scheme MTV32N20E AN569 SMD310 transistor mj 1504 PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


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    MTV330

    Abstract: MTV211 MTV320 CMMB ITD3020 ADMTV315 admtv102 ADMTV202 ISDB itd3010
    Text: MTV_EET_UTH_V2 2/6/08 2:32 PM Page 1 Ultra-small size, low power front-end solutions for hand-held designs. In mobile TV, analog is everywhere. Front-End Solutions Part# Configuration Frequency Band ADMTV300 RF Band-III/L-band/FM ADMTV315 RF+Demod SoC Band-III/L-band/FM


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    ADMTV300 ADMTV315 ITD3020 ITD3010 ADMTV316 MTV330 MTV320 ADMTV340 ADMTV102 ADMTV202 MTV330 MTV211 MTV320 CMMB ITD3020 ADMTV315 admtv102 ADMTV202 ISDB itd3010 PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


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    smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V PDF

    power tmos

    Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
    Text: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003  SCILLC, 2003 Previous Edition  2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.


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    Aug-2003 power tmos 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    mgb20n40cl

    Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


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    smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD PDF

    AN569 in Motorola Power Applications

    Abstract: motorola mosfet BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS MTP15N06V equivalent dpak DIODE ANODE COMMON motorola ir 722c motorola Power Applications Manual mtv32 DV240 AN1083
    Text: Thermal Compendium Table of Contents Abstracts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Basic Semiconductor Thermal Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7


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    Ericsson microwave antenna 0.3 to 0.6 difference

    Abstract: radar detector ad8302 100MHz AD935x DVB-T Schematic set top box ITD3020 AD9910 AD9912 fpga based 16 QAM Transmitter for wimax application create uhf vhf tv matching transformer itd3010
    Text: The RF Reader A collection of published articles on RF from Analog Devices www.analog.com/RF The RF Reader A collection of published articles on RF from Analog Devices Smart Partitioning for WiMAX Radios . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1


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    AD8368: CDMA2000 G07603- Ericsson microwave antenna 0.3 to 0.6 difference radar detector ad8302 100MHz AD935x DVB-T Schematic set top box ITD3020 AD9910 AD9912 fpga based 16 QAM Transmitter for wimax application create uhf vhf tv matching transformer itd3010 PDF

    dB865

    Abstract: MTV330 MTV211 ADL5334 ADF7012 ADL5391 ADMTV315 adf4153 ADF4350 itd3010
    Text: RF IC产品概览 2008年夏季/秋季 目录 TruPwr有效值 RMS 功率检波器 . . 2 混频器和乘法器 . . . . . . . . . . . . . . 9 RF/IF放大器 . . . . . . . . . . . . . . . . . . 3 模拟I/Q和矢量调制器 . . . . . . . . . 10 高频ADC驱动器 . . . . . . . . . . . . . . . 4


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    AD8361 ADG936 ADG936-R BR02148a-5-5/08 dB865 MTV330 MTV211 ADL5334 ADF7012 ADL5391 ADMTV315 adf4153 ADF4350 itd3010 PDF

    mgb20n40cl

    Abstract: MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530
    Text: Example of exceptions: MTD/MTP3055E Example of exceptions: MTD/MTP2955E CHANNEL POLARITY, N OR P VOLTAGE RATING DIVIDED BY 10 OPTIONAL SUFFIX: L FOR LOGIC LEVEL E FOR ENERGY RATED T4 FOR TAPE & REEL DPAK/D2PAK RL FOR TAPE & REEL (DPAK/D3PAK) HD FOR HIGH CELL DENSITY


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    MTD/MTP3055E MTD/MTP2955E MTP75N06HD O-220 O-220 O-247 O-264 OT-227B MMSF4P01HDR1 SG265/D mgb20n40cl MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530 PDF

    AD6548

    Abstract: ADAU1301 AD6900 ad6855 ad6720 GSM based motor control circuit diagram ad6546 AD6548 circuit AD6527 ad6857
    Text: 2007 Wireless Handset IC Selection Guide www.analog.com/handsetICs SoftFone Chipsets for GSM/GPRS/EDGE/3G SoftFone Chipset Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Advanced Multimedia EDGE/GPRS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    G06597W-3-1/07 AD6548 ADAU1301 AD6900 ad6855 ad6720 GSM based motor control circuit diagram ad6546 AD6548 circuit AD6527 ad6857 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTV32N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV32N 25E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate


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    MTV32N25E/D TV32N PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TV32N 20E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N-Channel Enhancement-Mode Silicon Gate


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    MTV32N20E/D TV32N PDF

    MTV32-400A

    Abstract: D027A DTV32-1000A
    Text: SCS-THOMSON MTV32-400A CRT HORIZONTAL DEFLECTION MODULATION DIODE MAIN PRODUCT CHARACTERISTICS If peak 3A VRRM 400V trr 22ns Vf 1.35V FEATURES • PRODUCT SPECIFIC TO HORIZONTAL DE­ FLECTION ■ HIGH REVERSE VOLTAGE ■ LOW SW ITCHING LOSSES DUE TO SMALL


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    MTV32-400A D027A D027A DTV32-1000A 00b034L> MTV32-400A PDF

    RECTIFIER DIODE 1000A schottky

    Abstract: No abstract text available
    Text: Gì SGS-IHOMSON m DTV32-1000A MTV32-600A CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER & MODULATION DIODES For complete specifications refer to "SCHOTTKY RECTIFIER DIODES" MAIN PRODUCTS CHARACTERISTICS MTV32 DTV32 IF peak 3A VRRM trr 600V 3A 1000V 50ns 1.6V


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    MTV32 DTV32 DTV32-1000A MTV32-600A D027A RECTIFIER DIODE 1000A schottky PDF

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON MTV32-400A •Ht CRT HORIZONTAL DEFLECTION MODULATION DIODE For complete specifications refer to "SCHOTTKY RECTIFIER DIODES" MAIN PRODUCT CHARACTERISTICS IF peak 3A VRRM trr 400V Vf 22ns 1.35V FEATURES . PRODUCT SPECIFIC TO HORIZONTAL DE­ FLECTION


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    MTV32-400A D027A PDF

    MTV32N20E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MTV32N20E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced term ination


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    MTV32N20E PDF

    D027A

    Abstract: DIODE 1000a diode 628 1000A diode DTV32-1000A 1000v 3a diode 113 DTV32 MTV32-600A mtv32 switching DIODE 1000A
    Text: DTV32-1000A MTV32-600A / ^ 7 SGS-THOMSON CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER & MODULATION DIODES MAIN PRODUCTS CHARACTERISTICS MTV32 DTV32 If peak 3A 3A Vr r m 600V 1000V trr 50ns 70ns Vf 1.6V 1.6V FEATURES • PRODUCTS SPECIFIC TO HORIZONTAL DE­


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    DTV32-1000A MTV32-600A MTV32 DTV32 D027A 09x/p2x 7T2T237 DTV32-1000A DIODE 1000a diode 628 1000A diode 1000v 3a diode 113 DTV32 MTV32-600A switching DIODE 1000A PDF

    transistor 1201 1203 1205

    Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
    Text: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).


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    AVS08 AVS10 110/220V TEA6420J TEA6422 TEA6425 TEA6430 TEA7605 transistor 1201 1203 1205 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282 PDF