Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Open Mode Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Oct 2013 003-01 / 20130929 / mlcc_commercial_openmode_en MULTILAYER CERAMIC CHIP CAPACITORS
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C2012
CC0805]
C3216
CC1206]
C3225
CC1210]
C4532
CC1812]
C5750
CC2220]
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c3216x7r TDK
Abstract: c3216x7r1c475 C5750X5R1A686M c3216x5r C5750X5R0J107M C3216X5R1A475 C3216X7R1C105K capacitor 1000 uf 25v C5750X5R1C476M C3216X7R1C225
Text: TDK Hi Caps TDK Electronics Europe GmbH Head Office Wanheimer Straße 57 D - 40472 Düsseldorf, Germany Tel: 49 - 211 - 90 77-0 Fax: 49 - 211 - 41 49 84 E-mail: [email protected] TDK Electronics Italy Centro Commerciale Milano Est Scala H, Piano 1, Via Tolstoi 86
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10kHz
C3216X7R1C105K
C3216X7R1C155K
C3216X7R1C225K
C3216X5R1A335K
100kHz
c3216x7r TDK
c3216x7r1c475
C5750X5R1A686M
c3216x5r
C5750X5R0J107M
C3216X5R1A475
C3216X7R1C105K
capacitor 1000 uf 25v
C5750X5R1C476M
C3216X7R1C225
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS CKG Series Commercial Grade MEGACAP Type Type: CKG32K [EIA CC1210] CKG45K [EIA CC1812] CKG45N [EIA CC1812] CKG57K [EIA CC2220] CKG57N [EIA CC2220] Issue date: Oct 2013 004-01 / 20130929 / mlcc_commercial_megacap_en MULTILAYER CERAMIC CHIP CAPACITORS
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CKG32K
CC1210]
CKG45K
CC1812]
CKG45N
CKG57K
CC2220]
CKG57N
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS CKG Series Automotive Grade MEGACAP Type Type: CKG32K [EIA CC1210] CKG45K [EIA CC1812] CKG45N [EIA CC1812] CKG57K [EIA CC2220] CKG57N [EIA CC2220] Issue date: Oct 2013 004-01 / 20130930 / mlcc_automotive_megacap_en MULTILAYER CERAMIC CHIP CAPACITORS
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CKG32K
CC1210]
CKG45K
CC1812]
CKG45N
CKG57K
CC2220]
CKG57N
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Oct 2013 C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025]
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C1608
CC0603]
C2012
CC0805]
C3216
CC1206]
C3225
CC1210]
C4520
CC1808]
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Jan 2014 C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025]
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C1608
CC0603]
C2012
CC0805]
C3216
CC1206]
C3225
CC1210]
C4520
CC1808]
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Aug 2013 C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025] CKCN27 [EIA CC0302]
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C2012
CC0805]
C3216
CC1206]
C3225
CC1210]
C4520
CC1808]
C4532
CC1812]
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series, CKC Series Automotive Grade Soft Termination Type: CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] CKCM25 [EIA CC0504] CKCL22 [EIA CC0805] Issue date:
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CC0805]
CC1206]
CC1210]
CC1808]
CC1812]
CC2220]
CKCM25
CC0504]
CKCL22
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series, CKC Series Automotive Grade Soft Termination Type: CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] CKCM25 [EIA CC0504] CKCL22 [EIA CC0805]
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CC0603]
CC0805]
CC1206]
CC1210]
CC1808]
CC1812]
CC2220]
CKCM25
CC0504]
CKCL22
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series, CKC Series Automotive Grade Soft Termination Type: CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] CKCM25 [EIA CC0504] CKCL22 [EIA CC0805]
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CC0603]
CC0805]
CC1206]
CC1210]
CC1808]
CC1812]
CC2220]
CKCM25
CC0504]
CKCL22
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Untitled
Abstract: No abstract text available
Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10-160RN;
BLF6G10LS-160RN
BLF6G10-160RN
10LS-160RN
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BLF6G10LS-160RN
Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10-160RN;
BLF6G10LS-160RN
BLF6G10-160RN
10LS-160RN
BLF6G10LS-160RN
TRANSISTOR SMD BV
RF35
nxp TRANSISTOR SMD 13
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Untitled
Abstract: No abstract text available
Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
BLF888
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BLF6G22LS-75
Abstract: RF35
Text: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22LS-75
BLF6G22LS-75
RF35
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SmD TRANSISTOR a41
Abstract: No abstract text available
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF6G22LS-100
SmD TRANSISTOR a41
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BLF6G22LS-100
Abstract: RF35
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF6G22LS-100
BLF6G22LS-100
RF35
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BLF888A
Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
SMD l33 Transistor
smd transistor L33
dvb-t2
ST EZ 711 253
BLF888AS
smd transistor l32
UT-090C-25
L33 SMD
transistor smd l33
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smd transistor L33
Abstract: UT-090C-25 BLF888A L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 1 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
smd transistor L33
UT-090C-25
L33 SMD
PAR ofdm
SMD l33 Transistor
800B
800R
BLF888AS
C1210X475K5RAC-TU
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Untitled
Abstract: No abstract text available
Text: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22LS-75
BLF6G22LS-75
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Soft Termination Type: C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025] Issue date: Mar 2014
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C1608
CC0603]
C2012
CC0805]
C3216
CC1206]
C3225
CC1210]
C4520
CC1808]
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Untitled
Abstract: No abstract text available
Text: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G10S-45
BLF6G10S-45
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series Automotive Grade Soft Termination Type: CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] Issue date: Mar 2014 007-01 / 20140402 / mlcc_automotive_soft_en-01
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CC0603]
CC0805]
CC1206]
CC1210]
CC1808]
CC1812]
CC2220]
en-01
SpK230KE
CGA8N4X7T2W474M230KE
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d2375
Abstract: BLF6G10S-45 RF35
Text: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G10S-45
BLF6G10S-45
d2375
RF35
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Untitled
Abstract: No abstract text available
Text: BLF6G10-45 Power LDMOS transistor Rev. 02 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G10-45
BLF6G10-45
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