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Catalog Datasheet	MFG & Type	PDF	Document Tags
99716 Abstract: 95579 Text: MwT-1789HL DC-4 GHz Packaged FET Preliminary Data Sheet June 2005 Features Ideal for DC –4000 MHz High Linearity / High Dynamic Range Applications Excellent RF Performance: 46 dBm IP3 70 dBc ACPR 28 dBm P1dB 14 dB SSG @ 2000 MHz MTTF > 100 years @ channel temperature 150ºC	Original	PDF	MwT-1789HL OT-89 MwT-1789 MwT-1789HL cdma2000, stations56 99716 95579
ap910401 Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10 Text: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology	Original	PDF	MGA-444940-02 ap910401 mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10
MPS 808 Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820 Text: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical	Original	PDF
MPS 808 Abstract: MwT-10 252724 445122 MwT-h17 MIL-PRF38535 Power Amplifier MMIC 2.6 GHz 0218-H4N2 .H2 sot89 solar voltage regulator Text: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical	Original	PDF
MwT-1789HL Abstract: wimax 99716 T1789 Text: MwT-1789HL DC-4 GHz Packaged FET Data Sheet June 2006 Features: • • • • Ideal for DC – 4 GHz High Linearity / High Dynamic Range Applications Excellent RF Performance: o 45 dBm IP3 o 70 dBc ACPR o 28 dBm P1dB o 14 dB SSG @ 2000 MHz MTTF > 100 years @ channel temperature 150ºC	Original	PDF	MwT-1789HL OT-89 MwT-1789HL cdma2000, LA804 wimax 99716 T1789
mps 0940 Abstract: WPS-252717-82 WPS-495917-02 Text: Linear Ampliﬁer Solutions Typical RF Performance Freq WPS-252717-82 WPS-252724-02 WPS-252724-99 MPS-343717-82 MPS-343617-82 MPS-363817-82 WPS-343722-02 WPS-343724-99 WPS-343724-02 WPS-495917-02 WPS-495922-02 MWT-1789HL MWT-1789LN* Ghz (dB) Ga P-1dB (dBm)	Original	PDF	WPS-252717-82 WPS-252724-02 WPS-252724-99 MPS-343717-82 MPS-343617-82 MPS-363817-82 WPS-343722-02 WPS-343724-99 WPS-343724-02 WPS-495917-02 mps 0940 WPS-252717-82 WPS-495917-02
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
MwT1789HL Abstract: solar schematic Text: Application Notes MwT-1789HL DC-4 GHz Packaged FET June 2005 Application Circuit Typical RF Performance bias at Vds=6.5V, Ids=200mA, Ta=25 °C Parameter Units Test Frequency Typical Data MHz 870-960 1930-1990 2400-2600 3400-3500 Gain dB 18 14 11 10 Input Return Loss	Original	PDF	MwT-1789HL 200mA, wT-1789 MwT1789HL solar schematic
T1789 Abstract: FET application note 3435G Text: MwT-1789HL DC-4 GHz Packaged FET Application Note June 2006 Application Circuit: Typical RF Performance bias at Vds=6.5V, Ids=200mA, Ta=25 °C Parameter Units Test Frequency MHz 870-960 1930-1990 2400-2600 3400-3500 Gain dB 18 14 11 10 Input Return Loss dB	Original	PDF	MwT-1789HL 200mA, wT-1789 OT-89 T1789 FET application note 3435G