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    Macronix International Co Ltd MX29L1611GPC-12

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    Bristol Electronics MX29L1611GPC-12 1,130
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    Mx Com Inc MX29L1611GPC-12

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    Bristol Electronics MX29L1611GPC-12 350
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    Macronix International Co Ltd MX29L1611GPC-10

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    Bristol Electronics MX29L1611GPC-10 114
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    MX29L1 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MX29L1610B Macronix International SINGLE VOLTAGE 3V ONLY FLASH EEPROM Original PDF
    MX29L1610BMC-70 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610BMC-90 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610BTC-70 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610BTC-90 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610BXBC-70 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610BXBC-90 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610T Macronix International 16M-BIT [2M x 8/1M x 16] CMOS Original PDF
    MX29L1610TMC-70 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610TMC-90 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610TTC-70 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610TTC-90 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610TXBC-70 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1610TXBC-90 Macronix International 16M-BIT (2M x 8/1 M x 16) CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM Scan PDF
    MX29L1611 Macronix International 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM Original PDF
    MX29L1611G Macronix International 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29L1611G-12 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29L1611G-15 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29L1611GPC-10 Macronix International 16M-BIT (2M x 8/1M x 16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29L1611GPC-12 Macronix International 16M-BIT (2M x 8/1M x 16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF

    MX29L1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    29L1611-75

    Abstract: 29l1611-10
    Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.


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    MX29L1611 16M-BIT MX29L1611-75/10/12) 100/30ns, 120/30ns. MX29L1611-90) 200ms FEB/10/2000 FEB/21/2000 FEB/29/2000 29L1611-75 29l1611-10 PDF

    mxic

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns


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    MX29L1611G 16M-BIT 90ns/100ns/120ns 200ms APR/18/2000 JUL/10/2001 JAN/24/2002 SEP/11/2002 PM0604 mxic PDF

    F8000-FFFFF

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1610T/B 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Extended single-supply voltage range 2.7V to 3.6V for read and write MX29L1610T/B-90 • Regulated single-supply voltage range 3.0V to 3.6V for


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    MX29L1610T/B 16M-BIT MX29L1610T/B-90) MX29L1610T/B-70) 70/90ns 16K-block) 16K-block PM0582 SEP/20/1999 OCT/08/1999 F8000-FFFFF PDF

    MX29L1611GPC-90

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns


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    MX29L1611G 16M-BIT 90ns/100ns/120ns 200ms APR/18/2000 JUL/10/2001 JAN/24/2002 SEP/11/2002 NOV/21/2002 PM0604 MX29L1611GPC-90 PDF

    MX29L1611

    Abstract: No abstract text available
    Text: Introduction PRELIMINARY MX29L1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 3.3V ± 10% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast random access time: 100ns Fast pagemode access time: 50ns


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    MX29L1611 16M-BIT 100ns 200ms MX29L1611 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1610T/B 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Extended single-supply voltage range 2.7V to 3.6V for read and write MX29L1610T/B-90 • Regulated single-supply voltage range 3.0V to 3.6V for


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    MX29L1610T/B 16M-BIT MX29L1610T/B-90) MX29L1610T/B-70) 70/90ns 16K-block) 16K-block StaP15 NOV/06/1998 MAR/22/1999 PDF

    5555H

    Abstract: No abstract text available
    Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.


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    MX29L1611 16M-BIT MX29L1611-75/10/12) 100/30ns, 120/30ns. MX29L1611-90) 200ms JAN/18/2000 FEB/10/2000 FEB/21/2000 5555H PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns. • Full voltage range 2.7 to 3.6V write, erase and read


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    MX29L1611 16M-BIT MX29L1611-75/10/12) 100/30ns, 120/30ns. MX29L1611-90) 200ms a/2000 FEB/21/2000 FEB/29/2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: INDEX PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100ns Fast pagemode access time: 30ns Page access depth: 16 bytes/8 words, page address


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    MX29L1611 16M-BIT 100ns 200ms PM0511 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/120ns Sector erase architecture


    Original
    MX29L1611G 16M-BIT 90ns/120ns 200ms PM0604 APR/18/2000 JUL/10/2001 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100/120ns Fast pagemode access time: 30/40ns Page access depth: 16 bytes/8 words, page address


    Original
    MX29L1611 16M-BIT 100/120ns 30/40ns 200ms SEP/09/1998 NOV/26/1998 JUN/28/1999 JUL/15/1999 JUL/22/1999 PDF

    29L1611-75

    Abstract: MX29L1611
    Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.


    Original
    MX29L1611 16M-BIT MX29L1611-75/10/12) 100/30ns, 120/30ns. MX29L1611-90) 200ms JAN/18/2000 FEB/10/2000 FEB/21/2000 29L1611-75 MX29L1611 PDF

    MX29L1611G

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/120ns Sector erase architecture


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    MX29L1611G 16M-BIT 90ns/120ns 200ms 29L1611G-10-- 29L1611G-90 PM0604 APR/18/2000 MX29L1611G PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 100ns/120ns Sector erase architecture


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    MX29L1611G 16M-BIT 100ns/120ns 200ms MAR/23/1999 MAY/07/1999 PM0604 PDF

    MX29L1611

    Abstract: MX29L1611G command-30H
    Text: ADVANCED INFORMATION MX29L1611G / MX29L1611* 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns


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    MX29L1611G MX29L1611* 16M-BIT 90ns/100ns/120ns 29L1611PC-90/ 200ms APR/18/2000 JUL/10/2001 JAN/24/2002 MX29L1611 command-30H PDF

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


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    ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29LV160T/B, MX29LV161T/B FEATURES 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program


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    MX29LV160T/B, MX29LV161T/B 16M-BIT 2Mx8/1Mx16] 70/90ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte program01 PDF

    mxic

    Abstract: MX29L811 MX29L1611 MXIC flash
    Text: PRODUCT BRIEF MX29L811 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • 3.3V±10% write, erase and read • Endurance: 10,000 cycles • Fast random access time: 100/120ns • Fast pagemode access time: 30/50ns • Page access depth: 16 bytes/8 words, page address


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    MX29L811 8/512K 100/120ns 30/50ns 200ms 500mil) Q15/A-1 mxic MX29L811 MX29L1611 MXIC flash PDF

    Device-List

    Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
    Text: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera


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    LabTool-48 AC29LV400B AC29LV400T M6759 M8720 AS29F040 Device-List NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15 PDF

    MSP55lv512

    Abstract: MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A
    Text: AF9845/45B/45C DEVICE LIST AF9845 GANG UNIT AF9845B GANG UNIT AF9845C GANG UNIT Flash Support Group,Inc.


    Original
    AF9723/23B TEF808-50CF-01 FF804 50CARD AF9845/45B/45C FAT12FAT16 1GBit128MByte Am27C400 Am29DL16xCB TE003-48BG-07D MSP55lv512 MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A PDF

    MX29L160

    Abstract: No abstract text available
    Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program


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    MX29LV160T/B MX29LV160AT/AB 16M-BIT 2Mx8/1Mx16] 70/90ns 9us/11us 16K-Bytex1, 32K-Bytex1, 64K-Byte addrL/05/2001 MX29L160 PDF

    NEC D2732D

    Abstract: nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25
    Text: Dataman-48 Version 4.30 <ALL> Device List ALi M6759 www.dataman.com M6759 *44 M6759 *44Q M8720 AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera EP1210 EP220 EP312 EP330 EP900 EP910-T EPC1064 EPC1213 EPC1441 as 1213 EPM3064A *44 EPM5192 @84 EPM7032AEas7032 *44


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    Dataman-48 M6759 M8720 AS29LV800B AS29LV800T EP1210 EP220 NEC D2732D nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: — IW r a iU M X IC FEATURES ì m y MX29L1611 1 6 M-BIT[2 M X 8 / 1 M X 1 6 ] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 3.3V ± 10% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast random access time: 100ns


    OCR Scan
    MX29L1611 100ns 200ms 44-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1 61 OT/B 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Extended single-supply voltage range 2.7V to 3.6V for read and write MX29L1610T/B-90 • Regulated single-supply voltage range3.0V to 3.6V for


    OCR Scan
    MX29L1 16M-BIT MX29L1610T/B-90) MX29L1610T/B-70) 70/90ns 16K-block) 16K-block OCT/08/1999 29L1610T/B-90: 29L1610T/B-90 PDF