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    N-CHANNEL 250V POWER MOSFET Search Results

    N-CHANNEL 250V POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL 250V POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDA59N25

    Abstract: n-channel 250V power mosfet
    Text: UniFET FDA59N25 TM VDS = 250V VDS Avalanche = 300V RDS(on) Typ. @10V = 41mΩ 250V N-Channel MOSFET Features Description • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDA59N25 FDA59N25 n-channel 250V power mosfet

    FDA59N25

    Abstract: mosfet equivalent fda 59 n 30 mosfet fda 59 n 30
    Text: UniFET FDA59N25 TM VDS = 250V VDS Avalanche = 300V RDS(on) Typ. @10V = 41mΩ 250V N-Channel MOSFET Features Description • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDA59N25 FDA59N25 mosfet equivalent fda 59 n 30 mosfet fda 59 n 30

    1E14

    Abstract: 2E12 FRL234R4 JANSR2N7278
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7278 FRL234R4 1000K 1E14 2E12 FRL234R4 JANSR2N7278

    irf244

    Abstract: IRF246 IRF245 IRF247 TB334 relay 12v dc 6 pin
    Text: IRF244, IRF245, IRF246, IRF247 Semiconductor 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF244, IRF245, IRF246, IRF247 irf244 IRF246 IRF245 IRF247 TB334 relay 12v dc 6 pin

    MOSFET 200v 20A n.channel

    Abstract: IRF614 TB334
    Text: IRF614 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Features Description • 2.0A, 250V • Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified


    Original     		PDF IRF614 TA17443 MOSFET 200v 20A n.channel IRF614 TB334

    irf234 n

    Abstract: irf*234 n IRF236 IRF234 IRF237 IRF235 TB334
    Text: IRF234, IRF235, IRF236, IRF237 Semiconductor 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF234, IRF235, IRF236, IRF237 irf234 n irf*234 n IRF236 IRF234 IRF237 IRF235 TB334

    marking n52

    Abstract: marking N52 mosfet ZVN4525E6TA DSA0037389 ZVP4525E6 device marking N52 marking QG SOT23-6 MARKING TR SOT23-6 P MOSFET N52 marking sot223 device Marking
    Text: ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVN4525E6 OT23-6 OT223 ZVP4525E6 OT23-6 marking n52 marking N52 mosfet ZVN4525E6TA DSA0037389 ZVP4525E6 device marking N52 marking QG SOT23-6 MARKING TR SOT23-6 P MOSFET N52 marking sot223 device Marking

    SOT23-6 MARKING 310

    Abstract: ZVN4525G p-channel 250V power mosfet ZVN4525GTA ZVN4525GTC ZVP4525G DSA0037391
    Text: ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVN4525G OT223 OT23-6 ZVP4525G OT223 SOT23-6 MARKING 310 ZVN4525G p-channel 250V power mosfet ZVN4525GTA ZVN4525GTC ZVP4525G DSA0037391

    marking n52

    Abstract: marking N52 mosfet ZVN4525ZTA MOSFET 4420 sot223 device Marking ZVN4525Z ZVP4525G DSA0037393 device marking N52
    Text: ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVN4525Z OT223 OT23-6 ZVP4525G marking n52 marking N52 mosfet ZVN4525ZTA MOSFET 4420 sot223 device Marking ZVN4525Z ZVP4525G DSA0037393 device marking N52

    MOSFET N-CH 200V

    Abstract: MOSFET P-CH 250V 5A sd 150 zener diode STS1C1S250
    Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω


    Original     		PDF STS1C1S250 STS1C1S250 MOSFET N-CH 200V MOSFET P-CH 250V 5A sd 150 zener diode

    STS1C1S250

    Abstract: P-Channel MOSFET 120v dual zener diode 10v MOSFET N-CH 200V
    Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω


    Original     		PDF STS1C1S250 STS1C1S250 P-Channel MOSFET 120v dual zener diode 10v MOSFET N-CH 200V

    1E14

    Abstract: 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE
    Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 97 /Subject (4A, 250V, 0.610 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.610


    Original     		PDF JANSR2N7397 FSL234R4 R2N73 1E14 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE

    6N25

    Abstract: TO252-DPAK FDD6N25TM
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N25 FDU6N25 FDU6N25 FDD6N25TF FDD6N25TM 6N25 TO252-DPAK

    STS1C1S250

    Abstract: Zener Diode B1 9
    Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω


    Original     		PDF STS1C1S250 STS1C1S250 Zener Diode B1 9

    FDD6N25TM

    Abstract: FDD6N25 FDD6N25TF FDU6N25
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N25 FDU6N25 FDD6N25TM FDD6N25TF FDU6N25

    FQB16N25C

    Abstract: FQB16N25CTM FQI16N25C FQI16N25CTU n-channel 250V power mosfet
    Text: QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features Description • 15.6A, 250V, RDS on = 0.27 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB16N25C/FQI16N25C FQB16N25C/FQI16N25C FQB16N25C FQB16N25CTM FQI16N25C FQI16N25CTU n-channel 250V power mosfet

    Rad Hard in Fairchild for MOSFET

    Abstract: mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 78 /Subject (4A, 250V, 0.700 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.700


    Original     		PDF JANSR2N7278 FRL234R4 R2N72 1000K 100opment. Rad Hard in Fairchild for MOSFET mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3

    diode marking 33a on semiconductor

    Abstract: FDB33N25 FDB33N25TM FDI33N25 FDI33N25TU
    Text: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDB33N25 FDI33N25 FDI33N25 diode marking 33a on semiconductor FDB33N25TM FDI33N25TU

    diode marking 33a on semiconductor

    Abstract: FDI33N25TU marking 33a on semiconductor FDB33N25 FDB33N25TM FDI33N25
    Text: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDB33N25 FDI33N25 FDI33N25 diode marking 33a on semiconductor FDI33N25TU marking 33a on semiconductor FDB33N25TM

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V


    Original     		PDF FDP51N25 FDPF51N25 FDPF51N25

    FDPF33N25

    Abstract: marking 33a on semiconductor FDP33N25
    Text: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		PDF FDP33N25 FDPF33N25 O-220 FDPF33N25 marking 33a on semiconductor

    Untitled

    Abstract: No abstract text available
    Text: 33 JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 4A, 250V, rDS ON = 0.700Q The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings


    OCR Scan     		PDF FRL234R4 JANSR2N7278 1000K MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: IRF614 HARRIS S E M I C O N D U C T O R 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Description Features 2.0A, 250V Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET


    OCR Scan     		PDF IRF614

    irf246 N

    Abstract: irf244 TA17423 VW250 pj 88 diode
    Text: iH A R R is IRF244, IRF245, IRF246, IRF247 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF244, IRF245, IRF246, IRF247 TA17423. RF244, RF245, RF247 irf246 N irf244 TA17423 VW250 pj 88 diode