MOSFET 200v 20A n.channel
Abstract: IRF614 TB334
Text: IRF614 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Features Description • 2.0A, 250V • Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified
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IRF614
TA17443
MOSFET 200v 20A n.channel
IRF614
TB334
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IRF614
Abstract: No abstract text available
Text: IRF614 S E M I C O N D U C T O R 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Features Description • 2.0A, 250V • Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET
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IRF614
TA17443.
IRF614
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irfu214
Abstract: IRFR214 TB334
Text: IRFR214, IRFU214 Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are
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IRFR214,
IRFU214
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irfu214
IRFR214
TB334
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IRFR214
Abstract: IRFU214 TB334
Text: IRFR214, IRFU214 Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are
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250Vf
IRFR214
IRFU214
TB334
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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irfr214
Abstract: No abstract text available
Text: IRFR214, IRFU214 Data Sheet July 1999 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the
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IRFR214,
IRFU214
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irfr214
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Untitled
Abstract: No abstract text available
Text: IRFR214, IRFU214 S E M I C O N D U C T O R 2.2A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Features Description • 2.2A, 250V These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced
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IRFR214,
IRFU214
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Untitled
Abstract: No abstract text available
Text: IRF614 HARRIS S E M I C O N D U C T O R 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Description Features 2.0A, 250V Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET
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OCR Scan
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IRF614
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Untitled
Abstract: No abstract text available
Text: IRFR214, IRFU214 S e m iconductor Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are
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IRFR214,
IRFU214
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