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    N312A Search Results

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    N312A Price and Stock

    Rochester Electronics LLC ISL9N312AD3

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N312AD3 Bulk 1,025
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    Siemens 3VA64406HN312AA0

    BRKR 3VA64 3P 400A 65KA ETU3-LS
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    DigiKey 3VA64406HN312AA0 Box 1
    • 1 $6723.52
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    Mouser Electronics 3VA64406HN312AA0
    • 1 $9201.03
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    Siemens 3VA62255HN312AA0

    BRKR 3VA62 3P 250A 35KA ETU3-LSI
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    DigiKey 3VA62255HN312AA0 Box 1
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    Mouser Electronics 3VA62255HN312AA0
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    Siemens 3VA61405HN312AA0

    BRKR 3VA61 3P 40A 35KA ETU3-LSI
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    DigiKey 3VA61405HN312AA0 Box 1
    • 1 $1483.51
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    Mouser Electronics 3VA61405HN312AA0
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    Siemens 3VA62105HN312AA0

    BRKR 3VA62 3P 100A 35KA ETU3-LSI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3VA62105HN312AA0 Box 1
    • 1 $2657.53
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    • 1000 $2657.53
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    Mouser Electronics 3VA62105HN312AA0
    • 1 $2657.52
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    N312A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN9321

    Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
    Text: N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features


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    PDF ISL9N312ASK8T ISL9N312ASK8 MS-012AA AN9321 AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS

    n312ad

    Abstract: No abstract text available
    Text: PWM Optimized N312AD3ST/ N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original
    PDF ISL9N312AD3ST/ ISL9N312AD3 1450pF O-252 O-252) O-251AA) n312ad

    n312ad

    Abstract: TO-252AA Package N312A
    Text: N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    PDF ISL9N312AD3ST 1450pF O-252 n312ad TO-252AA Package N312A

    n312ad

    Abstract: ISL9N312AD3ST 25E5 tube ISL9N312AD3 11A ABS
    Text: N312AD3 / N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    PDF ISL9N312AD3 ISL9N312AD3ST 1450pF O-251AA) O-252 O-252) n312ad ISL9N312AD3ST 25E5 tube 11A ABS

    n312ad

    Abstract: 69E-10
    Text: N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    PDF ISL9N312AD3ST 1450pF O-252 n312ad 69E-10

    N312AS

    Abstract: N312AP n312* transistor ISL9N312AP3 ISL9N312AS3ST
    Text: N312AP3/N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


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    PDF ISL9N312AP3/ISL9N312AS3ST 1450pF O-263AB O-220AB N312AS N312AP n312* transistor ISL9N312AP3 ISL9N312AS3ST

    N312AP

    Abstract: N312AS N312A ISL9N312AP3 ISL9N312AS3ST
    Text: N312AP3/N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    PDF ISL9N312AP3/ISL9N312AS3ST 1450pF O-263AB O-220AB N312AP N312AS N312A ISL9N312AP3 ISL9N312AS3ST

    N312A

    Abstract: AN9321 ISL9N312ASK8T MS-012AA TB334
    Text: N312ASK8T Data Sheet 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs March 2001 File Number 5034 PWM Optimized [ /Title This device employs a new advanced trench MOSFET ISL9 technology and features low gate charge while maintaining


    Original
    PDF ISL9N312ASK8T N312A ISL9N312ASK8 AN9321 ISL9N312ASK8T MS-012AA TB334

    u574

    Abstract: IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D
    Text: •W CONTEf S in c e 1978 s 1 Reg. No. Q8718 ISO -9001: 2000 - BT" É ? Jk 100MHz 300MHz * 400MHz P3 ~ P4 800MHz N ANTENNA 1 1» P6 144/430MHZ P7 ~ P10 TWO BAND P11 ~ P12 MIC ECHO AMP P13 I EARPHONE MIC P13 ANTENNA B A S E TRANSCEIVER A C C ESSO R IES P15 ~ P16


    OCR Scan
    PDF Q8718 ISO-9001: 100MHz 300MHz 400MHz 800MHz 144/430MHZ u574 IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D

    1HT251

    Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
    Text: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A


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    PDF FojO33 KT357 KT358 KT361 KT363 KT364-2 KT366 KT368 KT369 KT369-1 1HT251 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313

    N317

    Abstract: n334 N-338 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a
    Text: -Gfo, N CONNECTORS S in c e 1 9 7 8 ORDERING INFORMATION t N-301A-B S G T INSULATION D DELRIN T TEFLON P PLASTIC PB PBT POLYESTER PH PHENOLIC CONTACT PLATING C CHROME G GOLD N NICKEL S SILVER BODY PLATING C CHROME G GOLD N NICKEL -* S SILVER BODY MATERIAL


    OCR Scan
    PDF N-301A-B N-301 N-313 N-325 N-337 N-302 N-314 N-326 N-338 N-303 N317 n334 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a