24N50
Abstract: 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 21 N50 IXFH/IXFM 24 N50 IXFH 26 N50 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
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21Node
21N50
24N50
26N50
O-204AE
24N50
21N50
26N50
N50 DIODE
IXFH26N50
.24n50
IXFH 24N50
IXFH24N50
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13N50
Abstract: 1117 MC
Text: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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O-247
O-204
13N50
1117 MC
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ixys ixth 21N50
Abstract: 21N50 24N50 ixth21n50
Text: VDSS MegaMOSTMFET IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
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21N50
24N50
O-204
O-247
O-204
O-247
ixys ixth 21N50
21N50
24N50
ixth21n50
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48N50
Abstract: W48A IXFN48N50 44N50
Text: HiPerFETTM Power MOSFETs IXFN 44 N50 IXFN 48 N50 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25
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44N50
48N50
48N50
W48A
IXFN48N50
44N50
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IXFN61N50
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFN 61 N50 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Objective Technical Specification * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ
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OT-227
IXFN61N50
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TA17465
Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
Text: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated
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RF4E20N50S
HUF75
337G3,
HUF753
TB334
RF4E20N50S
O-268
RF4E20N50ST
TA17465
RF4E20N50
power mosfet 500v 20a circuit
A1025
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PAL 007 B
Abstract: pal 007 PAL 007 c OmniVision CMOS Camera Module OmniVision Technologies CMOS Camera Module external sync OV5116 CMOS image sensor PAL omnivision PAL 007 A AEC Crystal Resonator
Text: OV5116P OV5116P SINGLE IC CMOS MONOCHROME CAMERA WITH PAL ANALOG OUTPUT Features Single chip 1/4 inch format video image sensor External frame sync capability CCIR/PAL output 40mw on-chip power consumption Selectable mirror image External data acquisition support
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OV5116P
OV5116P
AVDD-733-3061
OV5116MD
OV5116
OV5116
PAL 007 B
pal 007
PAL 007 c
OmniVision CMOS Camera Module
OmniVision Technologies
CMOS Camera Module external sync
CMOS image sensor PAL omnivision
PAL 007 A
AEC Crystal Resonator
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OmniVision CMOS Camera Module
Abstract: IC AL 6001 cmos NTSC IMAGE SENSOR OmniVision Technologies 20 pin IC AL 6001 omnivision OV5116 OV5116N SQ cmos sensor 28-pin lcc OV5116MD
Text: OV5116N OV5116N SINGLE IC CMOS MONOCHROME CAMERA WITH NTSC ANALOG OUTPUT Features Single chip 1/4 inch format video image sensor External frame sync capability EIA/NTSC output 40mw on-chip power consumption Selectable mirror image External data acquisition support
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OV5116N
OV5116N
OV5116
OV5116
OmniVision CMOS Camera Module
IC AL 6001
cmos NTSC IMAGE SENSOR
OmniVision Technologies
20 pin IC AL 6001
omnivision
SQ cmos sensor 28-pin lcc
OV5116MD
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IRF630N
Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3
Text: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models
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IRF630N
O-220
100oC,
IRF630N
TO-220 1030
630N
marking s2A
N-Channel MOSFET 200v
52e3
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N302AP
Abstract: ISL9N302AP3 1E25 l 129 v 1E40
Text: ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves
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ISL9N302AP3
11000pF
110nC,
O-220AB
N302AP
ISL9N302AP3
1E25
l 129 v
1E40
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Untitled
Abstract: No abstract text available
Text: FDP8874 N May 2008 FDP8874 tmM N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDP8874
FDP8874
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FQP45N03L
Abstract: FQP45N03
Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03L
FQP45N03
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Untitled
Abstract: No abstract text available
Text: IRFP140N Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Title FP1 N bt A, 0V, 40 m, Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models
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IRFP140N
O-247
IRFP140N
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Untitled
Abstract: No abstract text available
Text: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDP8880
FDB8880
FDB8880
O-263AB
O-220AB
|
|
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Untitled
Abstract: No abstract text available
Text: FDP8870 e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDP8870
FDP8870
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Untitled
Abstract: No abstract text available
Text: FDW2517NZ Dual N-Channel 2.5V Specified Trench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching
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FDW2517NZ
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icp-n20
Abstract: n38 transistor ICP-N38 ICP-N70 ICP-N25 ICP-N50 T104
Text: IC protector Overcurrent Protection Elements Circuit protection elements zCircuit protection elements Rohm’s circuit protectors have a very reliable current cut-off capability that protects ICs and their circuits from accidental short circuit loads. Whether operated in AC or DC circuits, these circuit protectors have a very low internal resistance in
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E107856)
icp-n20
n38 transistor
ICP-N38
ICP-N70
ICP-N25
ICP-N50
T104
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HUF76107P3
Abstract: AN7254 AN7260 AN9321 AN9322 TB334 76107P TC298
Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF7 6107P 3 /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel,
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HUF76107P3
6107P
O-220AB
HUF76107P3
AN7254
AN7260
AN9321
AN9322
TB334
76107P
TC298
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Untitled
Abstract: No abstract text available
Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
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Untitled
Abstract: No abstract text available
Text: 5 0 —T S O P 2 —40 0 D F D im e n s io n s in M ilim e ters 11. 7 6 ± o .20 Ü n50 O o m ö X < s: m m n26 «25 0.205 to 050 un un r-. m o o 10.16 0.05MIN LTI CN 1.00 ±0 io 1.20 MAX 0.50 0.45-0.75 SAMSUNG ELECTRONICS CO.,LTD.
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400DF
|
1xys
Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Text: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500
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IXTN36N45
IXTN36N50
IXTN36N45
Cto150Â
IXTN36N
D-68619;
1xys
IXTN36N50
36N50
E72873
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Untitled
Abstract: No abstract text available
Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.
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HUF75639G3,
HUF75639P3,
HUF75639S3S
54e-2
98e-1
99e-1
97e-2
HUF75639
95e-3
95e-2
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2N5039
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N 5038* 2N5039 NPN Silicon Transistors ‘ Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in sw itching regulators, inverters, w id e -b a n d a m p lifie rs and pow er o s c illa to rs in
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2N5038/D
2N5039
2N5038
O-204AA
2N5039
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Untitled
Abstract: No abstract text available
Text: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model
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HUF76129D3,
HUF76129D3S
O-252AA
T0-252AA
330mm
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