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Vishay Siliconix SIHD14N60ET4-GE3 N-CHANNEL 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHD14N60ET4-GE3	Cut Tape	2,960		1	1 $3.02 10 $1.962 100 $3.02 1000 $1.0145 10000 $1.0145	Buy Now
Vishay Siliconix SIHA14N60E-GE3 N-CHANNEL 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHA14N60E-GE3	Tube	2,920		1	1 $2.17 10 $2.17 100 $2.17 1000 $0.9575 10000 $0.9575	Buy Now
Vishay Siliconix SIHA150N60E-GE3 E SERIES POWER MOSFET THIN-LEAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHA150N60E-GE3	Tube	2,000		1	1 $4.57 10 $3.021 100 $4.57 1000 $1.64479 10000 $1.6225	Buy Now
Vishay Siliconix SIHK075N60E-T1-GE3 E SERIES POWER MOSFET POWERPAK 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHK075N60E-T1-GE3	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $3.29383	Buy Now
	SIHK075N60E-T1-GE3	Cut Tape	25		1	1 $7.84 10 $5.321 100 $5.321 1000 $5.321 10000 $5.321	Buy Now
Vishay Siliconix SIHK105N60EF-T1GE3 E SERIES POWER MOSFET POWERPAK 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHK105N60EF-T1GE3	Cut Tape	1,990		1	1 $6.46 10 $4.346 100 $6.46 1000 $2.5825 10000 $2.5825	Buy Now
	SIHK105N60EF-T1GE3	Digi-Reel	1,990		1	1 $6.46 10 $4.346 100 $6.46 1000 $2.5825 10000 $2.5825	Buy Now

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N60E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
N60E Abstract: MGW21N60ED MGW21 TME 86 T247 Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by N60ED/D DATA — Preliminary — lnsuiated Gate Bipolar Transistor Data Sheet MGW21 N60ED N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra-fast rectifier and uses an advanced	Original	PDF	MGW21N60ED/D MGW21 N60ED 140W41 24H609 N60ED/D N60E MGW21N60ED TME 86 T247
Pi filter Abstract: CM1460-06DE CM1460-08DE N60E TDFN-12 CM1460 CM1460-04DE Text: Praetorian C-L-C LCD and Camera EMI FilterArray with ESD Protection CM1460 Features Product Description • The CM1460 is a family of pi-style EMI filter arrays with ESD protection, which integrates four, six and eight filters C-L-C in small form factor TDFN	Original	PDF	CM1460 CM1460 15pF-17nH-15pF. 350MHz 140Mbps 800MHz Pi filter CM1460-06DE CM1460-08DE N60E TDFN-12 CM1460-04DE
1N60E Abstract: N60E MGP11N60E Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGPll N60m DATA DesignerSTM Data Sheet MGPI N60E insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	Original	PDF	1N60E MGP11N60E 30H7G2140 WI-2447 MGP11N60UD 1N60E N60E MGP11N60E
triac mw 131 600d Abstract: 65n06 Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717	Original	PDF
Pi filter Abstract: N60E california micro devices tdfn top marking TDFN-6 datasheet n60e CM1460 CM1460-04DE CM1460-06DE CM1460-08DE TDFN-12 Text: CM1460 Praetorian L-C LCD and Camera EMI Filter Array with ESD Protection Features Product Description • California Micro Devices’ CM1460 is a family of pi-style EMI filter arrays with ESD protection, which integrates four, six and eight filters C-L-C in small form factor	Original	PDF	CM1460 CM1460 15pF-17nH-15pF. 350MHz 140Mbps 800MHz protec12 MO-229C Pi filter N60E california micro devices tdfn top marking TDFN-6 datasheet n60e CM1460-04DE CM1460-06DE CM1460-08DE TDFN-12
14 pin mobile phone camera pinout Abstract: n60e WDFN-8 2x2 Text: CM1460 Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1460 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−L−C) in small form factor WDFN 0.50 mm pitch packages. Each EMI filter	Original	PDF	CM1460 CM1460/D 14 pin mobile phone camera pinout n60e WDFN-8 2x2
Untitled Abstract: No abstract text available Text: CM1460 Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1460 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−L−C) in small form factor WDFN 0.50 mm pitch packages. Each EMI filter	Original	PDF	CM1460 CM1460 CM1460â CM1460/D
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C	OCR Scan	PDF	MGP11 N60ED/D MGP11N60ED/D
diode lt 238 Abstract: 21N60ED Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced	OCR Scan	PDF	MGW21 N60ED/D MGW21N60ED/D diode lt 238 21N60ED
N60E Abstract: No abstract text available Text: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high	OCR Scan	PDF	MGP21 N60E/D MGP21N60ED N60E
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M G N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C	OCR Scan	PDF	P11N60ED/D N60ED
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED In sulate d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 90°C	OCR Scan	PDF	MGP11N60ED/D
N60E Abstract: PHP10N60E T0220AB Text: Product specification Philips Semiconductors PowerMOS transistors N60E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics	OCR Scan	PDF	PHP10N60E PHP10N60E T0220AB) T0220) N60E T0220AB