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onsemi NDC652P MOSFET P-CH 30V 2.4A SUPERSOT6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NDC652P	Digi-Reel			1	1 $1.57 10 $1.57 100 $1.57 1000 $1.57 10000 $1.57	Buy Now
	NDC652P	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	NDC652P	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	NDC652P		1,118			1 $2.12 10 $2.12 100 $2.12 1000 $0.8745 10000 $0.8745	Buy Now
onsemi NDC651N MOSFET N-CH 30V 3.2A SUPERSOT6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NDC651N	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	NDC651N	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
TE Connectivity 2112DH3NDC659 2112Dh3Ndc659=Rly, mini, herm, s \|Te Connectivity 2112DH3NDC659
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	2112DH3NDC659	Bulk			2	1 $3888.46 10 $3633.02 100 $3519.48 1000 $3519.48 10000 $3519.48	Buy Now
Master Electronics	2112DH3NDC659					1 $3784.38 10 $2977.23 100 $2977.23 1000 $2977.23 10000 $2977.23	Buy Now
Sager	2112DH3NDC659				1	1 $3870.39 10 $3725.25 100 $3725.25 1000 $3725.25 10000 $3725.25	Buy Now
Fairchild Semiconductor Corporation NDC652P
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Bristol Electronics	NDC652P		22,947			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	NDC652P		3,000		3	1 - 10 $1.6875 100 $0.6328 1000 $0.4388 10000 $0.4388	Buy Now
	NDC652P		312			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NDC652P		6,094			1 $1.325 10 $1.325 100 $1.325 1000 $0.6095 10000 $0.5565	Buy Now
	NDC652P		2,400			1 $2.25 10 $2.25 100 $2.25 1000 $0.585 10000 $0.5625	Buy Now
Fairchild Semiconductor Corporation NDC651N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NDC651N		5,987			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NDC651N		8,377			1 $0.45 10 $0.45 100 $0.45 1000 $0.1875 10000 $0.165	Buy Now
	NDC651N		2,400			1 $2.5 10 $2.5 100 $2.5 1000 $0.875 10000 $0.75	Buy Now
	NDC651N		268			1 $0.75 10 $0.75 100 $0.45 1000 $0.375 10000 $0.375	Buy Now
Velocity Electronics	NDC651N		236			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	NDC651N		590			1 $1.54 10 $1.54 100 $1.15 1000 $1 10000 $1	Buy Now

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NDC65 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
NDC651N	Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDC651N	Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effec	Original	PDF
NDC651N	National Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDC651N	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
NDC651N	National Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Scan	PDF
NDC651N_NF073	Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDC651N_NL	Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDC652	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDC652P	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDC652P	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effec	Original	PDF
NDC652P	National Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDC652P	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
NDC652P	National Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Scan	PDF
NDC652P	National Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Scan	PDF

NDC652P_NF073	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDC652P_NL	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF

NDC65 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NDC652P Abstract: No abstract text available Text: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	NDC652P NDC652P	PDF
NDC651N Abstract: No abstract text available Text: N March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is	Original	NDC651N NDC651N	PDF
NDC652P Abstract: No abstract text available Text: N March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is	Original	NDC652P NDC652P	PDF
marking 652 fairchild Abstract: No abstract text available Text: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	NDC652P NF073 marking 652 fairchild	PDF
NDC651N Abstract: CBVK741B019 F63TNR FDC633N Text: March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	NDC651N NDC651N CBVK741B019 F63TNR FDC633N	PDF
NDC651N Abstract: No abstract text available Text: March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	NDC651N NDC651N	PDF
CBVK741B019 Abstract: F63TNR FDC633N NDC652P r rca 631 Text: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	NDC652P CBVK741B019 F63TNR FDC633N NDC652P r rca 631	PDF
Supersot6 Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5	Original	FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
16f785 Abstract: 3000 watt inverter power reference design circuit PWM Inverter using PIC Microcontroller smps based 45 watt inverter AN1047 microchip led dimming buck converter with dsPIC flyback smps battery charger design using ice MICROCHIP AN1047 EXAMPLE of forward smps with dsPIC Text: AN1047 Buck-Boost LED Driver Using the PIC16F785 MCU Author: Stephen Bowling Microchip Technology Inc. INTRODUCTION This application note presents the design equations, schematics and source code for a 5.5W power LED driver using the PIC16F785 MCU. The application, as	Original	AN1047 PIC16F785 AN874 DS01047A-page 16f785 3000 watt inverter power reference design circuit PWM Inverter using PIC Microcontroller smps based 45 watt inverter AN1047 microchip led dimming buck converter with dsPIC flyback smps battery charger design using ice MICROCHIP AN1047 EXAMPLE of forward smps with dsPIC	PDF
FDC6331 Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3	Original	2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305	PDF
thermistor KSD201 Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™	Original		PDF
mosfet cross reference Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P	Original	2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L	PDF
FLMP SuperSOT-6 Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1	Original	SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80	PDF

FQPF*7N65C APPLICATIONS Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM	Original	UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
B5G1 Abstract: NDC652P Supersot 6 Text: M arch 1996 National f i Semiconductor" NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • -2.4A, -30V. RDSI0Nl = 0.18 fi @ VGS = -4.5V -10V. >V„ These P-Channel logic level enhancement mode power field effect transistors are produced using	OCR Scan	NDC652P LS01130 B5G1 NDC652P Supersot 6	PDF
652p Abstract: ir 652p Text: March 1996 F A IR C H IL D SEM ICONDUCTO R tm NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	OCR Scan	NDC652P -10Voduct 652p ir 652p	PDF
NDC651N Abstract: lu bg Text: N March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features T h ese N -C hannel lo g ic le v e l e n h a n c em e n t m o d e p o w er field effect transistors are p rod u ced using N ationals proprietary, high cell d en sity, DMOS	OCR Scan	NDC651N NDC651N NDC65 lu bg	PDF
A7830 Abstract: No abstract text available Text: PAIRCHII-D March 1996 M ICDNDUCTQ R ! NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,	OCR Scan	NDC651N A7830	PDF
NDC652P Abstract: No abstract text available Text: March 1 9 9 6 N NDC652P P-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T hese P-C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS	OCR Scan	NDC652P NDC652P	PDF
Supersot6 Abstract: ld32a NDC651N 55sc Text: National • Semiconductor" March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description ■ 3.2A, 30V. Ft,*, , = 0.09£1 @ VGS = 4.5V R d sio n i = 0 .0 6 0 @ VGS = 10V. These N-Channel logic level enhancement mode	OCR Scan	NDC651N bSD113D Supersot6 ld32a NDC651N 55sc	PDF
Untitled Abstract: No abstract text available Text: N March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese N -C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS	OCR Scan	NDC651N NDC65	PDF
Untitled Abstract: No abstract text available Text: March 1996 N NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese P-C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS	OCR Scan	NDC652P NDC652P	PDF

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onsemi NDC652P

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NDC65 Datasheets (16)

NDC65 Datasheets Context Search

NDC652P

NDC651N

NDC652P

marking 652 fairchild

NDC651N

NDC651N

CBVK741B019

Supersot6

fqp60n06

16f785

FDC6331

thermistor KSD201

mosfet cross reference

FLMP SuperSOT-6

FQPF*7N65C APPLICATIONS

SSP35n03

B5G1

652p

NDC651N

A7830

NDC652P

Supersot6

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