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    onsemi NDS8852H

    MOSFET N/P-CH 30V 4.3A 8SOIC
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    DigiKey NDS8852H Reel 2,500
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    • 10000 $0.49936
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    Fairchild Semiconductor Corporation NDS8852H

    COMPLEMENTARY MOSFET HALF BRIDGE Small Signal Field-Effect Transistor, 4.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA NDS8852H 4,900
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    NDS8852H Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS8852H Fairchild Semiconductor Complementary MOSFET Half Bridge Original PDF
    NDS8852H National Semiconductor Complementary MOSFET Half Bridge Original PDF
    NDS8852H Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8852H National Semiconductor Complementary MOSFET Half Bridge Scan PDF

    NDS8852H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Complementary MOSFET Half Bridge

    Abstract: NDS8852H
    Text: N February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially


    Original     		NDS8852H NDS8852H Complementary MOSFET Half Bridge PDF

    NDS8852H

    Abstract: No abstract text available
    Text: February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8852H NDS8852H PDF

    NDS8852H

    Abstract: F011 F63TNR F852 L86Z
    Text: February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8852H NDS8852H F011 F63TNR F852 L86Z PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor PDF

    NDS8852H

    Abstract: Complementary MOSFET Half Bridge
    Text: P A I R C H February 1996 I I - D iM I C D N D U C T Q R tm NDS8852H Complementary MOSFET Half Bridge Features General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDS8852H Complementary MOSFET Half Bridge PDF

    Untitled

    Abstract: No abstract text available
    Text: F e b ru a ry 1 9 9 6 N NDS8852H Complementary MOSFET Half Bridge General Description Features T hese C om plem entary MOSFET h alf bridge devices are p roduced using N ational's proprietary, high cell density, DMOS technology. This very high density process is especially


    OCR Scan     		NDS8852H NDS8852H 193tQ PDF

    Untitled

    Abstract: No abstract text available
    Text: National February 1996 Semiconductor" NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DM O S technology. This very high density process is especially tailored to


    OCR Scan     		NDS8852H PDF

    601lt

    Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
    Text: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |


    OCR Scan     		S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 601lt Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9952A FDV302P PDF