NDS8852H CMOS Search Results

NDS8852H CMOS Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
74HC4053FT		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
74HC4051FT		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
4104BDM		Rochester Electronics LLC	4104B - TTL/CMOS to CMOS Translator, CMOS, CDIP16
TN82C54-2		Rochester Electronics LLC	82C54 - CMOS Programmable Timer
MG80C286-10/R		Rochester Electronics LLC	80C286 - Microprocessor, 16-Bit, CMOS

NDS8852H CMOS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Complementary MOSFET Half Bridge Abstract: NDS8852H Text: N February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially	Original	NDS8852H NDS8852H Complementary MOSFET Half Bridge	PDF
NDS8852H Abstract: No abstract text available Text: February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide	Original	NDS8852H NDS8852H	PDF
NDS8852H Abstract: F011 F63TNR F852 L86Z Text: February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide	Original	NDS8852H NDS8852H F011 F63TNR F852 L86Z	PDF
Untitled Abstract: No abstract text available Text: National February 1996 Semiconductor" NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DM O S technology. This very high density process is especially tailored to	OCR Scan	NDS8852H	PDF
Untitled Abstract: No abstract text available Text: F e b ru a ry 1 9 9 6 N NDS8852H Complementary MOSFET Half Bridge General Description Features T hese C om plem entary MOSFET h alf bridge devices are p roduced using N ational's proprietary, high cell density, DMOS technology. This very high density process is especially	OCR Scan	NDS8852H NDS8852H 193tQ	PDF
NDS8852H Abstract: Complementary MOSFET Half Bridge Text: P A I R C H February 1996 I I - D iM I C D N D U C T Q R tm NDS8852H Complementary MOSFET Half Bridge Features General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	NDS8852H Complementary MOSFET Half Bridge	PDF