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    NE327 Search Results

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    NE327 Price and Stock

    SiTime Corporation SIT3807AI-D2-33NE-32.768000

    MEMS OSC VCXO 32.7680MHZ LVCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3807AI-D2-33NE-32.768000 1
    • 1 $6.91
    • 10 $6.506
    • 100 $6.0992
    • 1000 $5.08267
    • 10000 $5.08267
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    SiTime Corporation SIT3808AC-22-33NE-32.768000

    MEMS OSC VCXO 32.7680MHZ LVCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3808AC-22-33NE-32.768000 1
    • 1 $6.66
    • 10 $6.278
    • 100 $5.8977
    • 1000 $4.75623
    • 10000 $4.75623
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    SiTime Corporation SIT3808AI-22-33NE-32.768000

    MEMS OSC VCXO 32.7680MHZ LVCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3808AI-22-33NE-32.768000 1
    • 1 $6.79
    • 10 $6.402
    • 100 $6.0137
    • 1000 $4.84973
    • 10000 $4.84973
    Buy Now

    SiTime Corporation SIT3807AC-D2-33NE-32.768000

    MEMS OSC VCXO 32.7680MHZ LVCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3807AC-D2-33NE-32.768000 1
    • 1 $6.98
    • 10 $6.58
    • 100 $6.1811
    • 1000 $4.98474
    • 10000 $4.98474
    Buy Now

    SiTime Corporation SIT3807AI-22-33NE-32.768000

    MEMS OSC VCXO 32.7680MHZ LVCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3807AI-22-33NE-32.768000 1
    • 1 $6.79
    • 10 $6.402
    • 100 $6.0137
    • 1000 $4.84973
    • 10000 $4.84973
    Buy Now

    NE327 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE32702 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE32707 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE32708 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE32708 Unknown Transistor Replacements Scan PDF
    NE32712 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE32730 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE32730 Unknown Transistor Replacements Scan PDF

    NE327 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NE32708 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF NE32708

    Untitled

    Abstract: No abstract text available
    Text: NE32730 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF NE32730

    BF480

    Abstract: R950 Avantek S 2n3570 2SC988
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W V(BR)CBO fosc Max Gp Po N.F. at fTest (V) (Hz) (dB) (W) (dB) (Hz) Ic Max (A) Toper MatI. Max (OC) Package Style UHF/Microwave Transistors, Bipolar NPN (Cont'd) 5 10 15 20 2N6619


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    PDF 2N6619 2N6620 BFR15A MA42260-2B7 MM2261-2B7 2N6597 2N6598 BF480 R950 Avantek S 2n3570 2SC988

    NE32700

    Abstract: NE46734 NE32702 NE32708 NE32740A NE32740B NE46700 NE68039 NE94430
    Text: N E C / CALIFORNIA SbE D • b4E7414 DD0ES33 374 M N E C C Additional Small Signal Silicon Bipolar Products E LE C T R IC A L CH ARACTERISTICS PAR T N UM BER PACKAGE CODE VCEO V (mA) Pt (W) NE32700 NE32702 NE32708 NE32740A NE32740B CHIP 02 08 40A 40B 12


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    PDF ME7414 D00E533 NE32700 NE32702 NE32708 NE32740A NE32740B NE46700 NE46734 NE68039 NE94430

    2SC1924

    Abstract: NE32700
    Text: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR NE327 SERIES FEATURES_ DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : toN 0.7 ns TYP, toFF 0.5 ns TYP The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode switching applications


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    PDF NE327 E32740) NE32740 IS12S21I NE32700 2SC1924 NE32700

    2SA1424

    Abstract: No abstract text available
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ DESCRIPTION • PNP COMPLEMENT TO NE327 The NE889 series of PNP silicon transistors is designed for uttrahigh speed current mode switching applications and


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    PDF NE327 NE88900 NE88912 NE88933 NE88935 NE889 NE88900) NE88935 IS12I 2SA1424

    2SC1925

    Abstract: NE32708 2SC1924
    Text: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR NE327 SERIES FEATURES DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : toN 0.7 ns TYP, toFF 0.5 ns TYP The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode switching applications


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    PDF NE327 NE32740) NE32740 NE32700 4Z7525 00b5fe 2SC1925 NE32708 2SC1924

    2SC1924

    Abstract: NE32700 2sc1925 ne327 NE32708
    Text: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : to N 0.7 ns TYP, to F F The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode sw itching applications and for use in m icrowave am plifiers up to 1 GHz. Transistors


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    PDF NE327 NE32740) E32740 NE32700 2SC1924 2sc1925 NE32708

    2SA1424

    Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
    Text: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and


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    PDF b427414 NE88900 NE88912 NE88933 NE88935 NE327 NE889 NE88900) NE88935 2SA1424 2SA1228 G503 NE327 NE AND micro-X 2SA1223

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    NE99532

    Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
    Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­


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    PDF NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


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    PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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    PDF

    transistor IR 324 C

    Abstract: transistor selection guide
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency


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    PDF NE46134 NE85634 NE46134 NE46734 NE68018-T1 transistor IR 324 C transistor selection guide