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    NE850 Search Results

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    NE850 Price and Stock

    Diodes Incorporated FNE850004Q

    Clock SAW Oscillator SEAM7050 T&R 1K - Tape and Reel (Alt: FNE850004Q)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FNE850004Q Reel 1,000
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    Diodes Incorporated FNE850001

    Clock SAW Oscillator SEAM7050 T&R 1K - Tape and Reel (Alt: FNE850001)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FNE850001 Reel 12 Weeks 1,000
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    Mouser Electronics FNE850001
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    Diodes Incorporated FNE850004

    Clock SAW Oscillator SEAM7050 T&R 1K - Tape and Reel (Alt: FNE850004)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FNE850004 Reel 1,000
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    NEC Electronics Group NE8500295-8

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM ARSENIDE, N-CHANNEL, METAL SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NE8500295-8 60
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    NEC Electronics Group NE8500200

    IN STOCK SHIP TODAY
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    Component Electronics, Inc NE8500200 57
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    NE850 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE85001 NEC Semiconductor Selection Guide 1995 Original PDF
    NE85001 NEC 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET Original PDF
    NE8500100 NEC 1 W C-Band Power GaAs FET N-Channel GaAs MES FET Original PDF
    NE8500100 NEC C-BAND MEDIUM POWER GaAs MESFET Original PDF
    NE8500100-AZ NEC FET Transistor: 1W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET Original PDF
    NE8500100-RG NEC 1 W C-Band Power GaAs FET N-Channel GaAs MES FET Original PDF
    NE8500100-RG-AZ NEC FET Transistor: 1W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET Original PDF
    NE8500100-WB NEC 1 W C-Band Power GaAs FET N-Channel GaAs MES FET Original PDF
    NE8500100-WB-AZ NEC FET Transistor: 1W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET Original PDF
    NE8500199 NEC Semiconductor Selection Guide Original PDF
    NE8500199 NEC 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET Original PDF
    NE8500199-AZ NEC FET Transistor: 1W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET Original PDF
    NE85002 NEC 2 WATT C-BAND POWER GaAs MESFET Original PDF
    NE85002 NEC Semiconductor Selection Guide 1995 Original PDF
    NE85002 NEC 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET Original PDF
    NE8500200 NEC 2 W C-Band Power GaAs FET N-Channel GaAs MES FET Original PDF
    NE8500200-AZ NEC FET Transistor: 2W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET Original PDF
    NE8500200-RG NEC 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET Original PDF
    NE8500200-RG-AZ NEC FET Transistor: 2W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET Original PDF
    NE8500200-WB NEC 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET Original PDF

    NE850 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UM 3842

    Abstract: NE8500100 NE8500199 76600 FS S12 2 23178
    Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage


    Original     		NE8500100 NE8500199 24-Hour UM 3842 NE8500100 NE8500199 76600 FS S12 2 23178 PDF

    NE8500100

    Abstract: NE8500199 UM 3842 7486 gate
    Text: C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage • HIGH EFFICIENCY: 37% (PAE)


    Original     		NE8500100 NE8500199 24-Hour NE8500100 NE8500199 UM 3842 7486 gate PDF

    Nec K 872

    Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.


    Original     		NE85001 NE8500199 NE8500100 NE8500100 Nec K 872 NE8500100-RG NE8500100-WB PDF

    NEC k 3654

    Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
    Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device


    Original     		NE850R599A NE850R599A CODE-99 NEC k 3654 gl 7445 nec k 813 nec 8725 gm 8562 5942 A 7601 0549 PDF

    NE9004

    Abstract: NE850R5 9002 NE85001 NE9000 NE9001 ne900
    Text: Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 Linear Gain dB 21.0 NE850R5 18.0 NE9001/9002 NE9000 15.0 12.0 NE1280 NE85001 9.0 6.0 NE9004 3.0 0.3 10.0 1.0 30.0 Frequency (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS


    Original     		NE850R5 NE9001/9002 NE9000 NE1280 NE85001 NE9004 24-Hour NE9004 NE850R5 9002 NE85001 NE9000 NE9001 ne900 PDF

    NE8500100

    Abstract: NE850R599
    Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB VDSX Drain to Source Voltage


    Original     		NE850R599 NE850R599 24-Hour NE8500100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip


    Original     		NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 NE8500295 24-Hour PDF

    80500 TRANSISTOR

    Abstract: 0-647-55 AN-1001 NE85002 NE8500200 NE8500295 NE8500295-4 NE8500295-6 NE8500295-8 circulator 0.325 GHz
    Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip


    Original     		NE85002 NE8500200 NE8500295-6 NE8500295-8 NE8500295-4 NE8500295 80500 TRANSISTOR 0-647-55 AN-1001 NE85002 NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 circulator 0.325 GHz PDF

    80500 TRANSISTOR

    Abstract: AN-1001 NE85002 NE8500200 NE8500295 NE8500295-4 NE8500295-6 NE8500295-8
    Text: NE85002 SERIES 2 WATT C-BAND POWER GaAs MESFET FEATURES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip


    Original     		NE85002 NE8500200 NE8500295-6 NE8500295-8 NE8500295-4 NE8500295 AN-1001 24-Hour 80500 TRANSISTOR NE85002 NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 PDF

    nec microwave

    Abstract: MESFET NE850R599A NEC Microwave Semiconductors NE8500100
    Text: C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 0.5 W PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB 5.2±0.3 • HIGH EFFICIENCY (PAE): 38% 1.0±0.1 • SUPERIOR INTERMODULATION DISTORTION 4.0 MIN BOTH LEADS


    Original     		NE850R599A NE850R599A NE8500100 24-Hour nec microwave MESFET NEC Microwave Semiconductors PDF

    NE85002

    Abstract: NE8500200 NE8500200-RG NE8500200-WB NE8500295 NE8500295-4 NE8500295-6 NE8500295-8
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.


    Original     		NE85002 NE8500295 NE8500200 NE8500200 NE8500200-RG NE8500200-WB NE8500295-4 NE8500295-6 NE8500295-8 PDF

    80500 TRANSISTOR

    Abstract: No abstract text available
    Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES • NE85002 SERIES SELECTION CHART T Y P IC A L P E R F O R M A N C E CLASS A OPERATION • HIGH EFFICIENCY: • BROADBAND CAPABILITY T|ADD > 3 9 % PA RT NUM B ER TYP FR E Q U E N C Y RANGE G H z Po ut (dB m ) N E 8500200


    OCR Scan     		NE85002 NE8500295 AN-1001 80500 TRANSISTOR PDF

    NEC 1357

    Abstract: Nec K 872
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.


    OCR Scan     		NE85001 NE8500199 NE8500100 NE8500100 NEC 1357 Nec K 872 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES_ Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB V ds


    OCR Scan     		NE8500100 NE8500199 NE8500100 TheNE8500199isamedium fo658 IS12I IS111 IS22I2 IS12S21I PDF

    nec d 1590

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped elem ent matching network.


    OCR Scan     		NE85002 NE8500295 NE8500200 CODE-95 nec d 1590 PDF

    80500 TRANSISTOR

    Abstract: J1186 J56-1 J-2-502
    Text: NEC 2 WATT C-B AN D POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART • CLASS A OPERATION • HIGH EFFICIENCY: ^ add 2 39% TYP • BROADBAND CAPABILITY • PACKAGE OPTIONS: TYPICAL PERFORMANCE FREQUENCY G l RANGE dBm (GHz) (dB) PART NUMBER P out


    OCR Scan     		NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 NE8500295 24-Hour 80500 TRANSISTOR J1186 J56-1 J-2-502 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.


    OCR Scan     		NE85001 NE8500199 NE8500100 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.


    OCR Scan     		NE85002 NE8500295 NE8500200 PDF

    NEC Microwave Semiconductors

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES_ OUTLINE DIMENSIONS • HIGH O U T P U T POW ER: 0.5 W Units in mm PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB • HIG H EFFICIENC Y (PAE): 38% • SU PER IO R IN TER M O D U LA TIO N DISTORTIO N


    OCR Scan     		NE850R599A E850R599A NE8500100 NE850R599A NEC Microwave Semiconductors PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY NE85002 SERIES 2 WATT C-BAND POWER GaAs MESFET FEATURES • SELECTION CHART • HIGH EFFICIENCY: r ADD > 3 5 % T Y P • BROADBAND CAPABILITY • TYPICAL PERFORMANCE CLASS A OPERATION PACKAGE OPTIONS: Chip Herm etic Package • PARTIALLY MATCHED INPUT FOR PACKAGED


    OCR Scan     		NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 AN-1001 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES_ ABSOLUTE MAXIMUM RATINGS1 Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS • HIGH LINEAR GAIN: 9.0 dB PARAMETERS UNITS RATINGS


    OCR Scan     		NE8500100 NE8500199 NE8500100 NE8500199 IS12I JIS12I IS2212 IS12S21I PDF

    NE850R5

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


    OCR Scan     		NE850R5 NE850R599 CODE-99 PDF

    63000-000

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


    OCR Scan     		NE850R5 E850R599 CODE-99 63000-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device


    OCR Scan     		NE850R599A NE850R599A CODE-99 PDF