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    Rochester Electronics LLC NGTB50N60FWG

    IGBT 600V 100A
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    onsemi NGTB50N60FWG

    IGBT 600V 100A 223W TO247
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    Rochester Electronics NGTB50N60FWG 10,950 1
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    NGTB50N60FWG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB50N60FWG On Semiconductor NGTB50N60FWG - IGBT, 600 V, 50 A Original PDF

    NGTB50N60FWG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N60F

    Abstract: NGTB50N60FWG 50N60
    Text: NGTB50N60FWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		PDF NGTB50N60FWG NGTB50N60FW/D 50N60F 50N60

    G50N60

    Abstract: G50N60F NGTG50N60FWG g50n NGTB50N60FWG
    Text: NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		PDF NGTG50N60FWG NGTG50N60FWD G50N60 G50N60F g50n NGTB50N60FWG