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    NPN 1147 Search Results

    NPN 1147 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN 1147 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11477 Revision. 3 Product Standards Transistors with Built-in Resistor DRC5114E0L DRC5114E0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA5114E DRC2114E in SMini3 type package 2.0 0.3 0.13 3 • Features


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    TT4-EA-11477 DRC5114E0L DRA5114E DRC2114E UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11478 Revision. 3 Product Standards Transistors with Built-in Resistor DRC5143Z0L DRC5143Z0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA5143Z DRC2143Z in SMini3 type package 2.0 0.3 0.13 3 • Features


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    TT4-EA-11478 DRC5143Z0L DRA5143Z DRC2143Z UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector


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    2SD1367 REJ03G0785-0200 ADE-208-1147) 2SB1001 PLZZ0004CA-A PDF

    RENESAS marking code package

    Abstract: 2SB1001 2SD1367 2SD1367BCTR-E
    Text: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector


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    2SD1367 REJ03G0785-0200 ADE-208-1147) 2SB1001 PLZZ0004CA-A RENESAS marking code package 2SB1001 2SD1367 2SD1367BCTR-E PDF

    2SB1001

    Abstract: 2SD1367 2SD1367BCTR-E UPAK Marking BC
    Text: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector


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    2SD1367 REJ03G0785-0200 ADE-208-1147) 2SB1001 PLZZ0004CA-A 2SB1001 2SD1367 2SD1367BCTR-E UPAK Marking BC PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11472 Revision. 3 Product Standards Transistors with Built-in Resistor DRC2113Z0L DRC2113Z0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA2113Z 2.9 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat


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    TT4-EA-11472 DRC2113Z0L DRA2113Z UL-94 PDF

    2SB1001

    Abstract: 2SD1367 DSA003638
    Text: 2SD1367 Silicon NPN Epitaxial ADE-208-1147 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C)


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    2SD1367 ADE-208-1147 2SB1001 2SB1001 2SD1367 DSA003638 PDF

    A8A Transistor

    Abstract: SOT-23 marking a8x transistor A8J SOT-23 A8A A8A Transistor sot23
    Text: MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    MMUN2211LT1 OT-23 COLT-23 OT-23 A8A Transistor SOT-23 marking a8x transistor A8J SOT-23 A8A A8A Transistor sot23 PDF

    temperature controller CHB 401

    Abstract: C3604B PSE54-R06 ISE40 c3604BD SMC zse40 ZSE40 C3604bd datasheet A6063S washing machine control panel circuit diagram
    Text: PSE Series 2/23/99 2:19 PM Page 7 ∗∗ Controller Series PSE100 How to Order PSE10 Option Output specifications NPN output 1 PNP output — Without cover C With cover Mounting A B ∗Refer to p.3.1-14 for DIN rail part number. Controller Specifications PSE100-„


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    PSE100 PSE10 PSE100- PSE101- 10kPa 100kPa press-107 Jeddah-21471, temperature controller CHB 401 C3604B PSE54-R06 ISE40 c3604BD SMC zse40 ZSE40 C3604bd datasheet A6063S washing machine control panel circuit diagram PDF

    PCF7952

    Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


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    VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW


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    MCT270 MCT270 E90700 ST1603A C1682 C1681 C1683 C1685 C1296A 74bfc PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F=2.1dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz BFP180W Q62702-F1500 OT-343 PDF

    2SC3884A

    Abstract: 2SK528
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. HIGH SPEED SWITCHING REGULATOR OUTPUT APPLICATIONS. . High Voltage : 1500V . High Speed Switching Resistive Load tf=0. l(Js(Typ.) . Collector Metal is Fully Covered with Mold Resin.


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    2SC3884A 2SC3884A 2SK528 PDF

    philips 4859

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency


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    bbS3T31 D05SB11 BFR505 BFR505 philips 4859 PDF

    transistor bt 808

    Abstract: d 5072 transistor bt 7377 2521a S51-P TRANSISTOR BD 689 transistor Bf 908 SOT23 752 philips 4859 Transistor MJE 5331
    Text: • bbS3131 00B5211 D15 H A P X Philips Semiconductors N AMER Product specification PHILIPS/DISCRETE b ?E D NPN 9 GHz wideband transistor FEATURES BFR505 e PINNING • High power gain PIN • Low noise figure 2 DESCRIPTION 1 Code: N30 • High transition frequency


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    bbS3131 00B5211 BFR505 BFR505 transistor bt 808 d 5072 transistor bt 7377 2521a S51-P TRANSISTOR BD 689 transistor Bf 908 SOT23 752 philips 4859 Transistor MJE 5331 PDF

    2n2222 h 331 transistors

    Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
    Text: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300


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    BC107 BC108 BC109 BC140 BC141 BC337 BC337A BC338 BC368 BC375 2n2222 h 331 transistors 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 2n2222 331 transistors PNP 2n4403 331 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PN P Silicon A F and Sw itching Tran sisto rs • • • • B C X 42 B S S 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel)


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    Q62702-C1485 Q62702-S534 OT-23 flS35bG5 535L0S PDF

    CASE353-01

    Abstract: No abstract text available
    Text: It » e | b3t7 S S 4 DOfiDTìS 7 | 6 3 6 7 2 54 MOTOROLA SC CXSTRS/R F . 96D 8 0 9 9 5 T - J? -ÌS MJ10041 MJ10044 MJ10047 MOTOROLA SEMICONDUCTOR TECHNICAL DATA s^ sa^ Jesig n er’s D a ta Sh eet xisn - 25, 50, and 100 AMPERE NPN SILICON POWER DARLINGTON


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    MJ10041 MJ10044 MJ10047 MJ10041, MJ10044, 96D81008 MJE150291 MJE15028 2N2322 CASE353-01 PDF

    D44C5

    Abstract: ge d45c8 GE D44C9 D44C6 D44C3 TL3019 D44* general electric npn to-220 D44C4 d44c9 D44* npn
    Text: S IL IC O N POWER T R A N S IS T O R S COMPLEMENTARY - 4 AMPERES G E Type NPN PNP D44C1 - - D44C3 311.0 V CEO Min. V 30 •c Cont. (A) @ IV , ¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 10 30.0 - 30 -¿.0 25 _ 30.0 30 4.0 40 120 71) D45C2 30.0


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    200mA D44C1 D45C1 D44C2 D45C2 D44C3 D45C3 D44C4 D45C4 D44C5 ge d45c8 GE D44C9 D44C6 TL3019 D44* general electric npn to-220 d44c9 D44* npn PDF

    NPN 1147

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 U nit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. H A M M E R D RIV E , PULSE M O T O R D R IV E A P P L IC A T IO N S. • • • High DC Current Gain : hpE = 2000 Min. (V c e = 3 V , I = 3A) Low Saturation Voltage : V q e (sat) = 1-5V (Max.) (Ic = 3A)


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    2SD2526 2SB1641 NPN 1147 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    transistor 1201 1203 1205

    Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
    Text: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).


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    AVS08 AVS10 110/220V TEA6420J TEA6422 TEA6425 TEA6430 TEA7605 transistor 1201 1203 1205 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282 PDF

    2N6121

    Abstract: No abstract text available
    Text: • 7^E^S37 □ D S ci 3 ô ci fi ■ 3 3 H \ f Z 7 SGS-THOMSON 2N6121/22/23 ^ 7 # IM@[M [i[L[i@¥E»nûS_ 2N6124/25/26 S G S - THOMS ON 3 PE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N6121, 2N6122 and 2N6123 are silicon epi­


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    2N6121/22/23 2N6124/25/26 2N6121, 2N6122 2N6123 O-220 2N6124, 2N6125 2N6121/22/23/24/25/26 2N6121 PDF