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    NPN ECB Search Results

    NPN ECB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN ECB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c2611

    Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238
    Text: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR *Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO * ICEO


    Original     		PDF O-126 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SC3417 BD437 BD238 c2611 BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238

    str 6707

    Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.


    Original     		PDF M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202

    2n2712 data sheet

    Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0


    Original     		PDF 2N2712 2N2714 2N2923 2N2924 2N2925 2N4289 2N4400 2n2712 data sheet 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923

    BF858

    Abstract: BF859 BF857 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors


    Original     		PDF M3D067 BF857; BF858; BF859 O-202 MBH794 O-202. BF858 BF859 BF857 BP317

    BF859

    Abstract: BF857 BF858 BF859 equivalent
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors


    Original     		PDF M3D067 BF857; BF858; BF859 O-202 MBH794 BF859 BF857 BF858 BF859 equivalent

    1902 transistor

    Abstract: BTN2129A3
    Text: CYStech Electronics Corp. Spec. No. : C853A3 Issued Date : 2004.07.14 Revised Date :2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129A3 Description The BTN2129A3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


    Original     		PDF C853A3 BTN2129A3 BTN2129A3 R2120 UL94V-0 1902 transistor

    BF422A

    Abstract: NPN transistor ECB TO-92 1902 transistor BF422 BF422A3 BF423A3 C234A3
    Text: Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BF422A3 Description • NPN high voltage transistors in a TO-92 plastic package. • Complementary to BF423A3. Features


    Original     		PDF C234A3 BF422A3 BF423A3. UL94V-0 BF422A NPN transistor ECB TO-92 1902 transistor BF422 BF422A3 BF423A3 C234A3

    NPN transistor ECB TO-92

    Abstract: BF420A3 1902 transistor BF420 BF420A3S
    Text: Spec. No. : C234A3-A Issued Date : 2004.03.02 Revised Date : 2004.10.18 Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BF420A3/S Description • NPN high voltage transistors in a TO-92 plastic package. • Complementary to BF421A3/S.


    Original     		PDF C234A3-A BF420A3/S BF421A3/S. UL94V-0 NPN transistor ECB TO-92 BF420A3 1902 transistor BF420 BF420A3S

    302 opto

    Abstract: GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar


    Original     		PDF Q62702-P1641ppe. GET06017 302 opto GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor

    transistor potencia

    Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
    Text: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP


    OCR Scan     		PDF fl531BÃ BC546 BC547 BC548 BC549 BC556 BC557 PA6015 PB6015 PA6025 transistor potencia t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494

    NPN transistor 2n4400 beta value

    Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
    Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN


    OCR Scan     		PDF 2N2711 2N2712 2N2924 2N2925 2N2926Â 2N4401 2N4402 2N4403 MPS2713 MPS2714 NPN transistor 2n4400 beta value TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644

    2SA673A

    Abstract: 2SC1213A ic100na NPN transistor ECB TO-92
    Text: 2SA673A 2SC1213A SILICON TRANSISTOR 2SA673A PNP and 2SC1213A TO-92 (NPN) are silicon epitaxial transistors designed for medium power amplifiers and switching applications. (PNP) is complementary to 2SC1213A 2SA673A (NPN). ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage


    OCR Scan     		PDF 2SA673A 2SC1213A 2SA673A 2SC1213A 500mA 400mW 100mA ic100na NPN transistor ECB TO-92

    2N5249

    Abstract: No abstract text available
    Text: CRO DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. 2N5249 NPN SILICON TRANSISTOR TO-92B ECB ABSOLUTE M AXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 2N5249 O-92B 2N5249 100mA 330mW 300fiS, Aug-96

    Untitled

    Abstract: No abstract text available
    Text: IC 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCB0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 2N3417 2N3417 500mA

    2N3417

    Abstract: transistor BO 540 NPN transistor ECB TO-92
    Text: 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


    OCR Scan     		PDF 2N3417 2N3417 500mA transistor BO 540 NPN transistor ECB TO-92

    TP107B

    Abstract: 2N5133 TP107A 2N3565 TP109B tp107 TP252A TP251B MPS-A13 pnp 2N5138
    Text: Q Q D f l O I I C EconolineR Plastic-Molded 0I KHV UC Silicon SEPT" Transistors SMALL-SIGNAL LOW NOISE AMPLIFIERS P O LA R IT Y Pd 25 C mW 2N3565 2N5133 2N5138 2N 5376 2N5377 2N5378 2N 5379 NPN NPN PNP NPN NPN PNP PNP 625 625 625 500 500 500 500 30 20 30


    OCR Scan     		PDF 2N3565 2N5133 2N5138 2N5377 2N5378 MPS5308A 2N5306 2N5306A 2N5307 2N5308 TP107B TP107A TP109B tp107 TP252A TP251B MPS-A13 pnp

    NPN transistor ECB TO-92

    Abstract: 2N3414 0181 ecb
    Text: NPN SILICON TRANSISTOR DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. TO-92 ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Operating & Storage Junction Temperature


    OCR Scan     		PDF 2N3414 500mA 100jiA 10fiA NPN transistor ECB TO-92 0181 ecb

    2N5249

    Abstract: "Small Signal Amplifier"
    Text: 2N5249 NPN SILICON TRANSISTOR TO-92B DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. ECB ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation


    OCR Scan     		PDF 2N5249 O-92B 100mA 330mW 10/iA 50PARAMETER 300/xS, Aug-96 "Small Signal Amplifier"

    2SC1815

    Abstract: MICRO ELECTRONICS ltd transistor 2SC1815 GR
    Text: 2SC1815 NPN SILICON TRANSISTOR TO-92B 2SC1815 is NPN silicon epitaxial transistor designed for RF, AF amplifier and general purpose applications. ECB ABSOLUTE MAXIMUM RATINGS 45 V Collector-Base Voltage vCB0 Collector-Emitter- Voltage VCEO Emitter-Base Voltage


    OCR Scan     		PDF 2SC1815 T0-92B 300mW 41Q321 MICRO ELECTRONICS ltd transistor 2SC1815 GR

    2N4954

    Abstract: 2N4951 2N4952 2N49 2N495 2N4953 B115m 631 TO92
    Text: Ä!fliC»S€lH€ilSlf COrp. Central Semiconductor Corp. central Semiconductor Corp. 1 4 5 Adam s A venue Hauppauge, N e w York 1 1 7 8 8 ♦ » 2N4951 2N4952 2N4953 2Ub3Sb NPN SILICON TRANSISTORS JEDEC TO-92 CASE ECB DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4951 Series types are Epoxy Molded Silicon NPN Transistors


    OCR Scan     		PDF 2N4951 2N4952 2N4953 2N495 2N4954) 2N4954 150mA, 100MHz 2N49 B115m 631 TO92

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION


    OCR Scan     		PDF BF859 115002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: CRO DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. Their maximum power dissipation = 160mW at Ta=25°C. CASE T0-92Á MPS TYPES MPS/2N2923,4,5 and similar types NPN SILICON


    OCR Scan     		PDF 160mW T0-92à MPS/2N2923 T0-92B MPS/2N2711 12pFn MPS/2N2712 MPSMPS/2N3398 200MHz Dec-95

    BOX69477

    Abstract: 2N5307 2N5308
    Text: 2N 5307 & 2N 5308 NPN DARLINGTON AM P IFIER MECHANICAL OUTLINE TO-92B GENERAL DESCRIPTION : The 2N 5307 & 2N 5308 are NPN silicon planar epitaxial Darlington amplifiers* The devices are suitable for preamplifier input stages requir­ ing high input impedance or very high


    OCR Scan     		PDF O-92B 300mA 200mA 200mA TELEX-43510 BOX69477 2N5307 2N5308

    2N5307

    Abstract: No abstract text available
    Text: 2N 5307 & 2N 5308 NPN DARLINGTON GENERAL DESCRIPTION : A M P IFIER MECHANICAL OUTLINE TO-92B The 2N 5307 & 2N 5308 are NPN silicon planar epitaxial Darlington amplifiers. The devices are suitable for preamplifier input stages requir­ ing high input impedance or very high


    OCR Scan     		PDF O-92B 400sM 10ftnA 20MHz 2N5307