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MACOM NPT1004D RF MOSFET HEMT 28V 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NPT1004D	Tube	24		1	1 $70.68 10 $55.733 100 $70.68 1000 $70.68 10000 $70.68	Buy Now
Mouser Electronics	NPT1004D					1 $64.8 10 $60.88 100 $54.58 1000 $54.58 10000 $54.58	Get Quote
Verical	NPT1004D		71		2	1 - 10 $61.05 100 $61.05 1000 $61.05 10000 $61.05	Buy Now
Bristol Electronics	NPT1004D		7			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	NPT1004D		71		1	1 $61.03 10 $61.03 100 $61.03 1000 $61.03 10000 $61.03	Buy Now
	NPT1004D				95	1 - 10 - 100 $47.93 1000 $47.93 10000 $47.93	Buy Now
MACOM NPT1012B RF MOSFET HEMT 28V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NPT1012B	Tray			30	1 - 10 - 100 $156.78732 1000 $156.78732 10000 $156.78732	Buy Now
Mouser Electronics	NPT1012B					1 $179.88 10 $168.48 100 $164.97 1000 $164.97 10000 $164.97	Get Quote
Richardson RFPD	NPT1012B				30	1 - 10 - 100 $150.52 1000 $150.52 10000 $150.52	Buy Now
MACOM NPT1010P TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NPT1010P	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
MACOM NPT1010B RF MOSFET HEMT 28V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NPT1010B	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Richardson RFPD	NPT1010B				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM NPT1007B RF MOSFET HEMT 28V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NPT1007B	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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NPT10 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
NPT1004D	M/A-Com	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 45W DC-4GHZ 8SOIC	Original	PDF
NPT1007B	M/A-Com	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - TRANSISTOR GAN DC-1200MHZ 200W	Original	PDF
NPT1010B	M/A-Com	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 100W DC-2000MHZ	Original	PDF
NPT1012B	M/A-Com	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 25W DC-4000MHZ	Original	PDF

NPT10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ELXY Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz	Original	PDF	NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, ELXY npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
NPT1007 Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99 Text: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature	Original	PDF	NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101
sagami Abstract: PT10R-003 PT10R-007 PT10R-009 PT10R-010 Text: nPT10 SELECTION GUIDE FOR STANDARD COILS SAGAMI Part Number PT10R-003 PT10R-007 PT10R-009 PT10R-010 Turns Ratio N1:N2:N3 18:4 18:4:9 18:4 5:1 Primary Inductance N1 mH Typ. 620 150 150 11 Connections Coil designs other than those listed in the Selection Guide are available, based on	Original	PDF	nPT10 PT10R-003 PT10R-007 PT10R-009 PT10R-010 sagami PT10R-003 PT10R-007 PT10R-009 PT10R-010
Untitled Abstract: No abstract text available Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in	Original	PDF	NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023
NPT1012 Abstract: NPT1012B AC200BM-F2 AC200B Text: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in	Original	PDF	NPT1012 DC-4000MHz 3000MHz 0-25W 1000-2500MHz 2-20W 30-1000MHz EAR99 3000MHz) 225mA, NPT1012B AC200BM-F2 AC200B
Untitled Abstract: No abstract text available Text: NPT1015 Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-3.5 GHz 28V Operation Industry Standard Package	Original	PDF	NPT1015 NPT1015 NDS-035
NPT1010 Abstract: a114 est J22 transistor AC360BM-F2 EAR99 JESD22-A114 JESD22-A115 49dBm nrf1 Nitron Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz	Original	PDF	NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, a114 est J22 transistor AC360BM-F2 JESD22-A114 JESD22-A115 49dBm nrf1 Nitron
Untitled Abstract: No abstract text available Text: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance	Original	PDF	NPT1004 2500MHz EAR99 4000MHz 400mA, 2500MHz, NDS-010
Untitled Abstract: No abstract text available Text: NPT1015 Gallium Nitride 28V, 50W, DC-2.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-2.5 GHz 28V Operation Industry Standard Package	Original	PDF	NPT1015 NPT1015 NDS-035
Untitled Abstract: No abstract text available Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in	Original	PDF	NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023
NPT100 Abstract: No abstract text available Text: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance	Original	PDF	NPT1004 2500MHz EAR99 4000MHz 400mA, 2500MHz, NDS-010 NPT100
Untitled Abstract: No abstract text available Text: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in	Original	PDF	NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA,
NPT1004 Abstract: NPT1004DR NPT1004DT NPT1004D J-162 25001-2 EAR99 JESD22-A113 JESD22-A114 2500-2700MHz Text: NPT1004 Datasheet Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz	Original	PDF	NPT1004 2500MHz EAR99 4000MHz 400mA, 2500MHz, NDS-010 NPT1004DR NPT1004DT NPT1004D J-162 25001-2 JESD22-A113 JESD22-A114 2500-2700MHz
ATC100B101JW500X Abstract: CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B NPT1007 DTA183 RES2512 ELXY630ELL271MK25S Text: AD-014 AD-014: Nitronex NPT1007 GaN HEMT Tuned for 500-1000 MHz Application design AD-014 with one half of a Nitronex NPT1007 GaN HEMT device outputs approximately 50 Watts of average RF power under CW conditions with approximately 9.0 to 14 dB gain, 50% drain efficiency. All measurements were collected	Original	PDF	AD-014 AD-014: NPT1007 AD-014 1000MHz 700mA. APB08-132 ATC100B101JW500X CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B DTA183 RES2512 ELXY630ELL271MK25S

Untitled Abstract: No abstract text available Text: NPT1010 Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in	Original	PDF	NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023
PIMD3 Abstract: npT1007 TRANSISTOR J15 Text: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature	Original	PDF	NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 PIMD3 npT1007 TRANSISTOR J15
Untitled Abstract: No abstract text available Text: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in	Original	PDF	NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA,
NPTB00004 Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100 Text: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for	Original	PDF	NPTB00004 PO150S NPT25015 NPT35015 NPT1012 2xNPT25100 NPTB00004 NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
NPT25100 Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader	Original	PDF	NPTB00004 PO150S 99GHz 17GHz -35dBc NPT25015 NPT25100 800-1000MHz NPT25100 NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
Avago 9886 Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8	Original	PDF	com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
NPTB00004 Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate Text: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.	Original	PDF	NPTB00004 PO150S NPT25015 NPTB00004 NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
PCL6143 Abstract: matsushita stepping motors Denso 12V Dc Motor PCL6045BL Common rail piezo injector driver PPCI7443 PCL6123 Servo motor based mobile robot control PCD4500 nikki denso Text: w w w . n i pp o np u l s e . c o m Motion Control/ Serial Communication Nippon Pulse Your Partner in Motion Control w w w . n i pp o np u l s e . c o m Motion/Serial Communication A variety of Nippon Pulse motion control chips and boards are available, including programmable pulse generators, counter chips, and high-speed	Original	PDF	PCL6000 PCL6100 PCD2112 PCD4500 -201002-1K PCL6143 matsushita stepping motors Denso 12V Dc Motor PCL6045BL Common rail piezo injector driver PPCI7443 PCL6123 Servo motor based mobile robot control nikki denso
Denso 12V Dc Motor specifications Abstract: 3 phase AC servo PANASONIC drive schematic NPT102F JPC NPT102F PCD4500 sanyo denki stepper motor PCL6045BL sanyo denki nema 23 stepping motor pin out nikki denso common rail piezo injector driver Text: w w w . n i pp o np u l s e . c o m Motion Control/ Serial Communication Nippon Pulse Your Partner in Motion Control w w w . n i pp o np u l s e . c o m Motion/Serial Communication A variety of Nippon Pulse motion control chips and boards are available, including programmable pulse generators, counter chips, and high-speed	Original	PDF	PCL6000 PCL6100 PCD2112 PCD4500 -201002-1K Denso 12V Dc Motor specifications 3 phase AC servo PANASONIC drive schematic NPT102F JPC NPT102F sanyo denki stepper motor PCL6045BL sanyo denki nema 23 stepping motor pin out nikki denso common rail piezo injector driver
GaN amplifier Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2	Original	PDF	AN-013 AN-013: NPTB00004 12-Watt NPT25100 MRF6S9125 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation

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NPT10 Datasheets (4)

NPT10 Datasheets Context Search

ELXY

NPT1007

sagami

Untitled

NPT1012

Untitled

NPT1010

Untitled

Untitled

Untitled

NPT100

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NPT1004

ATC100B101JW500X

Untitled

PIMD3

Untitled

NPTB00004

NPT25100

Avago 9886

NPTB00004

PCL6143

Denso 12V Dc Motor specifications

GaN amplifier