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    NPT1007B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NPT1007B M/A-Com Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - TRANSISTOR GAN DC-1200MHZ 200W Original PDF

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    NPT1007

    Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99
    Text: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature


    Original     		PDF NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101

    TRANSISTOR J15

    Abstract: PIMD3
    Text: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature


    Original     		PDF NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 TRANSISTOR J15 PIMD3

    PIMD3

    Abstract: npT1007 TRANSISTOR J15
    Text: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature


    Original     		PDF NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 PIMD3 npT1007 TRANSISTOR J15