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    NTD4960N Search Results

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    NTD4960N Price and Stock

    onsemi NTD4960NT4G

    MOSFET N-CH 30V 8.9A/55A DPAK
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    NTD4960NT4G Digi-Reel 1
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    NTD4960NT4G Cut Tape
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    Chip 1 Exchange NTD4960NT4G 171
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    onsemi NTD4960N-1G

    MOSFET N-CH 30V 8.9A/55A IPAK
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    Bristol Electronics NTD4960N-1G 450
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    onsemi NTD4960N-35G

    MOSFET N-CH 30V 8.9A/55A IPAK
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    Rochester Electronics NTD4960N-35G 1,096 1
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    onsemi NTD4960N1G

    Electronic Component
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    ComSIT USA NTD4960N1G 525
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    NTD4960N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD4960N-1G On Semiconductor NTD4960 - TRANSISTOR 8.9 A, 30 V, 0.0127 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, CASE369AC-01, IPAK-3, FET General Purpose Power Original PDF
    NTD4960N-35G On Semiconductor NTD4960 - TRANSISTOR 8.9 A, 30 V, 0.0127 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, CASE369D-01, IPAK-3, FET General Purpose Power Original PDF
    NTD4960NT4G On Semiconductor NTD4960NT4 - TRANSISTOR 8.9 A, 30 V, 0.0127 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, CASE369AA-01, DPAK-4, FET General Purpose Power Original PDF

    NTD4960N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    60NG

    Abstract: 4960ng NTD4960NT4G 4960N 369D 051BSC
    Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    PDF NTD4960N NTD4960N/D 60NG 4960ng NTD4960NT4G 4960N 369D 051BSC

    Untitled

    Abstract: No abstract text available
    Text: NTD4960N Product Preview Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    PDF NTD4960N NTD4960N/D

    60NG

    Abstract: No abstract text available
    Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    PDF NTD4960N NTD4960N/D 60NG

    4960ng

    Abstract: 60NG
    Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    PDF NTD4960N NTD4960N/D 4960ng 60NG

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original
    PDF SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F