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NTD4960NT4G Price and Stock

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onsemi NTD4960NT4G MOSFET N-CH 30V 8.9A/55A DPAK
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NTD4960NT4G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NTD4960NT4G		On Semiconductor	NTD4960NT4 - TRANSISTOR 8.9 A, 30 V, 0.0127 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, CASE369AA-01, DPAK-4, FET General Purpose Power		Original	PDF

NTD4960NT4G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
60NG Abstract: 4960ng NTD4960NT4G 4960N 369D 051BSC Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4960N NTD4960N/D 60NG 4960ng NTD4960NT4G 4960N 369D 051BSC
Untitled Abstract: No abstract text available Text: NTD4960N Product Preview Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4960N NTD4960N/D
60NG Abstract: No abstract text available Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4960N NTD4960N/D 60NG
4960ng Abstract: 60NG Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4960N NTD4960N/D 4960ng 60NG