Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NTE2384 Search Results

    SF Impression Pixel

    NTE2384 Price and Stock

    NTE Electronics Inc NTE2384

    Power Mosfet N-channel 900V Id=6A TO-3 Case Rds=1.4 Ohm High Speed Switching
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE2384 4
    • 1 $55.06
    • 10 $44.16
    • 100 $38.86
    • 1000 $37.86
    • 10000 $37.86
    Buy Now
    Bristol Electronics NTE2384 2 1
    • 1 $28.8
    • 10 $28.8
    • 100 $28.8
    • 1000 $28.8
    • 10000 $28.8
    Buy Now
    Quest Components NTE2384 1
    • 1 $41.145
    • 10 $41.145
    • 100 $41.145
    • 1000 $41.145
    • 10000 $41.145
    Buy Now
    NTE2384 1
    • 1 $31.2
    • 10 $31.2
    • 100 $31.2
    • 1000 $31.2
    • 10000 $31.2
    Buy Now

    NTE2384 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE2384 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF

    NTE2384 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mosfet NTE2384

    Abstract: NTE2384 mosfet for 900V, 6A
    Text: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 900V


    Original
    NTE2384 00A/s, mosfet NTE2384 NTE2384 mosfet for 900V, 6A PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2384 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original
    NTE2384 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original
    NTE2384 PDF

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original
    MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020 PDF