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NTE Electronics Inc NTE2674 Transistor Pnp Silicon 60V Ic=3A To-220Fp Case General Purpose Power Amp Complement To Nte2673 \|Nte Electronics NTE2674
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE2674	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	NTE2674		30		1	1 $2.12 10 $1.69 100 $1.52 1000 $1.52 10000 $1.52	Buy Now
NTE Electronics Inc NTE267 Transistor NPN Silicon Darlington TO-202 Case 30V IC=0.5A Power AMP/switch
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE267		6			1 $2.98 10 $2.71 100 $2.14 1000 $1.9 10000 $1.82	Buy Now
Bristol Electronics	NTE267		5		2	1 - 10 $4.48 100 $4.48 1000 $4.48 10000 $4.48	Buy Now
Quest Components	NTE267		9			1 $4.3875 10 $2.1938 100 $2.1938 1000 $2.1938 10000 $2.1938	Buy Now
	NTE267		4			1 $6 10 $4 100 $4 1000 $4 10000 $4	Buy Now
NTE Electronics Inc NTE2670 Transistor: NPN; bipolar; 250V; 16A; 200W; TO3-PBL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	NTE2670		39		1	1 $10.1 10 $8 100 $7.19 1000 $7.19 10000 $7.19	Buy Now
NTE Electronics Inc NTE2673 Transistor: NPN; bipolar; 50V; 3A; 25W; TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	NTE2673		19		1	1 $2.12 10 $1.69 100 $1.52 1000 $1.52 10000 $1.52	Buy Now
NTE Electronics Inc NTE2672 Transistor: NPN; bipolar; 50V; 0.2A; 0.6W; TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	NTE2672		9		1	1 $2.37 10 $1.9 100 $1.71 1000 $1.71 10000 $1.71	Buy Now

NTE267 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NTE267		NTE Electronics	Silicon NPN Transistor High Gain Darlington Power Amp, Switch		Original	PDF

NTE267 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor	Original	PDF	NTE2679 O220F 100mA, 750mA,
tab ic Abstract: No abstract text available Text: NTE267 Silicon NPN Transistor High Gain Darlington Power Amp, Switch Features: D Forward Current Transfer Ratio: hFE = 90,000 min. D Free–Air Power Dissipation: 1.33W @ TA = +50°C D Hard Solder Mountdown Applications: D Driver D Regulator D Audio Output	Original	PDF	NTE267 tab ic
Untitled Abstract: No abstract text available Text: NTE2676 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE2676 100mA, 75kHz
NTE267 Abstract: tab ic Text: NTE267 Silicon NPN Transistor High Gain Darlington Power Amp, Switch Features: D Forward Current Transfer Ratio: hFE = 90,000 min. D Free−Air Power Dissipation: 1.33W @ TA = +50°C D Hard Solder Mountdown Applications: D Driver D Regulator D Audio Output	Original	PDF	NTE267 300sec NTE267 tab ic
npn 60V 600mw Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V	Original	PDF	NTE2672 100mA, npn 60V 600mw NTE2672 voltage 15v,collector current 40mA VEBO-15V
NTE2673 Abstract: TO220FP Text: NTE2673 NPN & NTE2674 (PNP) Silicon Complementary Transistors General Purpose Power TO220FP Type Package Features: D Low Collector−Emitter Saturation Voltage: VCD(sat) = 0.5V Typ (IC/IB = 2A/0.2A) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE2673 NTE2674 O220FP 200mA, 500mA, -500mA, 30MHz, NTE2673 TO220FP
Untitled Abstract: No abstract text available Text: NTE2675 Silicon NPN Transistor High Voltage High Speed Switch TO3PN Type Package Features: D High Reliability D High Voltage, High Speed Switching Applications: D Switching Regulators D Ultrasonic Generators D High Frequency Inverters D General Purpose Power Amplifiers	Original	PDF	NTE2675 600mA,
Untitled Abstract: No abstract text available Text: NTE2678 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO3P H IS Type Package Features: D Built−In Damper Diode D High Voltage, High Speed Applications: D Color TV Horizontal Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE2678 100mA,
Untitled Abstract: No abstract text available Text: NTE2677 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE2677
NTE267 Abstract: No abstract text available Text: NTE267 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)6.2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.90G h(FE) Max. Current gain.	Original	PDF	NTE267
NPN pnp MATCHED PAIRS Abstract: NTE2670 NTE2671 NPN MATCHED PAIRS Text: NTE2670 NPN & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output TO3PBL Type Package Description: The NTE2670 and NTE2671 are silicon complementary transistors in a TO3PBL type package that utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.	Original	PDF	NTE2670 NTE2671 NTE2670 NTE2671 800mA 100WRMS NPN pnp MATCHED PAIRS NPN MATCHED PAIRS
NTE2670 Abstract: NTE2671 Text: NTE2670 NPN & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output Description: The NTE2670 and NTE2671 utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.	Original	PDF	NTE2670 NTE2671 NTE2670 NTE2671 800mA 100WRMS
NTE2672 Abstract: VEBO-15V Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector-Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector-Base Voltage: VEBO ≥ 15V Applications: D Low Frequency, General Purpose Amp	Original	PDF	NTE2672 100mA, NTE2672 VEBO-15V