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    NTE267 Search Results

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    NTE267 Price and Stock

    NTE Electronics Inc NTE2674

    Transistor Pnp Silicon 60V Ic=3A To-220Fp Case General Purpose Power Amp Complement To Nte2673 |Nte Electronics NTE2674
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE2674 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    TME NTE2674 30 1
    • 1 $2.12
    • 10 $1.69
    • 100 $1.52
    • 1000 $1.52
    • 10000 $1.52
    		Buy Now

    NTE Electronics Inc NTE267

    Transistor NPN Silicon Darlington TO-202 Case 30V IC=0.5A Power AMP/switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE267 6
    • 1 $2.98
    • 10 $2.71
    • 100 $2.14
    • 1000 $1.9
    • 10000 $1.82
    		Buy Now
    Bristol Electronics NTE267 5 2
    • 1 -
    • 10 $4.48
    • 100 $4.48
    • 1000 $4.48
    • 10000 $4.48
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    Quest Components NTE267 9
    • 1 $4.3875
    • 10 $2.1938
    • 100 $2.1938
    • 1000 $2.1938
    • 10000 $2.1938
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    NTE267 4
    • 1 $6
    • 10 $4
    • 100 $4
    • 1000 $4
    • 10000 $4
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    NTE Electronics Inc NTE2670

    Transistor: NPN; bipolar; 250V; 16A; 200W; TO3-PBL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME NTE2670 39 1
    • 1 $10.1
    • 10 $8
    • 100 $7.19
    • 1000 $7.19
    • 10000 $7.19
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    NTE Electronics Inc NTE2673

    Transistor: NPN; bipolar; 50V; 3A; 25W; TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME NTE2673 19 1
    • 1 $2.12
    • 10 $1.69
    • 100 $1.52
    • 1000 $1.52
    • 10000 $1.52
    		Buy Now

    NTE Electronics Inc NTE2672

    Transistor: NPN; bipolar; 50V; 0.2A; 0.6W; TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME NTE2672 9 1
    • 1 $2.37
    • 10 $1.9
    • 100 $1.71
    • 1000 $1.71
    • 10000 $1.71
    		Buy Now

    NTE267 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE267 NTE Electronics Silicon NPN Transistor High Gain Darlington Power Amp, Switch Original PDF

    NTE267 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor


    Original     		PDF NTE2679 O220F 100mA, 750mA,

    tab ic

    Abstract: No abstract text available
    Text: NTE267 Silicon NPN Transistor High Gain Darlington Power Amp, Switch Features: D Forward Current Transfer Ratio: hFE = 90,000 min. D Free–Air Power Dissipation: 1.33W @ TA = +50°C D Hard Solder Mountdown Applications: D Driver D Regulator D Audio Output


    Original     		PDF NTE267 tab ic

    Untitled

    Abstract: No abstract text available
    Text: NTE2676 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2676 100mA, 75kHz

    NTE267

    Abstract: tab ic
    Text: NTE267 Silicon NPN Transistor High Gain Darlington Power Amp, Switch Features: D Forward Current Transfer Ratio: hFE = 90,000 min. D Free−Air Power Dissipation: 1.33W @ TA = +50°C D Hard Solder Mountdown Applications: D Driver D Regulator D Audio Output


    Original     		PDF NTE267 300sec NTE267 tab ic

    npn 60V 600mw

    Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V
    Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V


    Original     		PDF NTE2672 100mA, npn 60V 600mw NTE2672 voltage 15v,collector current 40mA VEBO-15V

    NTE2673

    Abstract: TO220FP
    Text: NTE2673 NPN & NTE2674 (PNP) Silicon Complementary Transistors General Purpose Power TO220FP Type Package Features: D Low Collector−Emitter Saturation Voltage: VCD(sat) = 0.5V Typ (IC/IB = 2A/0.2A) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2673 NTE2674 O220FP 200mA, 500mA, -500mA, 30MHz, NTE2673 TO220FP

    Untitled

    Abstract: No abstract text available
    Text: NTE2675 Silicon NPN Transistor High Voltage High Speed Switch TO3PN Type Package Features: D High Reliability D High Voltage, High Speed Switching Applications: D Switching Regulators D Ultrasonic Generators D High Frequency Inverters D General Purpose Power Amplifiers


    Original     		PDF NTE2675 600mA,

    Untitled

    Abstract: No abstract text available
    Text: NTE2678 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO3P H IS Type Package Features: D Built−In Damper Diode D High Voltage, High Speed Applications: D Color TV Horizontal Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2678 100mA,

    Untitled

    Abstract: No abstract text available
    Text: NTE2677 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2677

    NTE267

    Abstract: No abstract text available
    Text: NTE267 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)6.2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.90G h(FE) Max. Current gain.


    Original     		PDF NTE267

    NPN pnp MATCHED PAIRS

    Abstract: NTE2670 NTE2671 NPN MATCHED PAIRS
    Text: NTE2670 NPN & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output TO3PBL Type Package Description: The NTE2670 and NTE2671 are silicon complementary transistors in a TO3PBL type package that utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.


    Original     		PDF NTE2670 NTE2671 NTE2670 NTE2671 800mA 100WRMS NPN pnp MATCHED PAIRS NPN MATCHED PAIRS

    NTE2670

    Abstract: NTE2671
    Text: NTE2670 NPN & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output Description: The NTE2670 and NTE2671 utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.


    Original     		PDF NTE2670 NTE2671 NTE2670 NTE2671 800mA 100WRMS

    NTE2672

    Abstract: VEBO-15V
    Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector-Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector-Base Voltage: VEBO ≥ 15V Applications: D Low Frequency, General Purpose Amp


    Original     		PDF NTE2672 100mA, NTE2672 VEBO-15V