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    NTE27 Search Results

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    NTE27 Price and Stock

    NTE Electronics Inc NTE27

    Transistor, bjt, pnp,45V V(Br)Ceo, to-3 |Nte Electronics NTE27
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    Newark NTE27 Bulk 1
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    NTE Electronics Inc NTE278

    Rf Transistor, Npn, 20V, 1.2Ghz; Transistor Polarity:Npn; Collector Emitter Voltage Max:20V; Transition Frequency:1.2Ghz; Power Dissipation:2.5W; Continuous Collector Current:400Ma; No. Of Pins:3Pins; Dc Current Gain Hfe Min:40Hfe Rohs Compliant: Yes |Nte Electronics NTE278
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    Newark NTE278 Bulk 1
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    RS NTE278 Bulk 10 1
    • 1 $0.92
    • 10 $0.92
    • 100 $0.87
    • 1000 $0.87
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    Onlinecomponents.com NTE278 1,294
    • 1 -
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    • 100 $1.494
    • 1000 $0.925
    • 10000 $0.866
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    Bristol Electronics NTE278 5 2
    • 1 -
    • 10 $3
    • 100 $3
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    Quest Components NTE278 23
    • 1 $1.2863
    • 10 $1.1834
    • 100 $1.029
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    NTE278 4
    • 1 $4
    • 10 $3
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    NTE Electronics Inc NTE270

    Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Dc Current Gain Hfe Min:1000Hfe Rohs Compliant: Yes |Nte Electronics NTE270
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    Newark NTE270 Bulk 1
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    Onlinecomponents.com NTE270 10
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    • 10 $4.84
    • 100 $3.8
    • 1000 $3.38
    • 10000 $3.17
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    Bristol Electronics NTE270 38 1
    • 1 $6.72
    • 10 $4.368
    • 100 $3.36
    • 1000 $3.36
    • 10000 $3.36
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    Quest Components NTE270 30
    • 1 $9
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
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    NTE Electronics Inc NTE274

    Transistor, Npn, 80V, 8A, To-66; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:50W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Nte Electronics NTE274
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    NTE274 1
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    Quest Components NTE274 1
    • 1 $9
    • 10 $9
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    • 1000 $9
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    TME NTE274 3 1
    • 1 $12
    • 10 $9.52
    • 100 $9.52
    • 1000 $9.52
    • 10000 $9.52
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    NTE Electronics Inc NTE276

    Thyristor, gto,1.2Kv V(Drm),to-66 |Nte Electronics NTE276
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    Bristol Electronics NTE276 2 1
    • 1 $9
    • 10 $9
    • 100 $9
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    Quest Components NTE276 8
    • 1 $12.7935
    • 10 $6.3968
    • 100 $6.3968
    • 1000 $6.3968
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    NTE276 1
    • 1 $12
    • 10 $12
    • 100 $12
    • 1000 $12
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    TME NTE276 5 1
    • 1 $9.04
    • 10 $7.99
    • 100 $7.99
    • 1000 $7.99
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    Find more NTE27 price and stock on Findchips.com

    NTE27 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE27 NTE Electronics Germanium PNP Transistor Original PDF
    NTE270 NTE Electronics Silicon Complementary Transistor Darlington Power Amp, Switch Original PDF
    NTE2708 NTE Electronics Integrated Circuit NMOS, 8K UV EPROM, 450ns Original PDF
    NTE271 NTE Electronics Silicon Complementary Transistor Darlington Power Amp, Switch Original PDF
    NTE2716 NTE Electronics Integrated Circuit NMOS, 16K UV Erasable PROM Original PDF
    NTE272 NTE Electronics Silicon Darlington Complementary Power Amplifier Original PDF
    NTE273 NTE Electronics Silicon Darlington Complementary Power Amplifier Original PDF
    NTE2732A NTE Electronics 32K (4K x 8) NMOS UV Erasable PROM Original PDF
    NTE274 NTE Electronics Silicon Complementary Transistor Darlington Power Amp, Switch Original PDF
    NTE275 NTE Electronics Silicon Complementary Transistors Darlington Power Amplifier, Switch Original PDF
    NTE2764 NTE Electronics Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Original PDF
    NTE278 NTE Electronics Silicon NPN Transistor Broadband RF Amp Original PDF

    NTE27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO202N

    Abstract: NTE272 NTE273 ic 555 audio amplifiers
    Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.


    Original     		PDF NTE272 NTE273 200mA 500mA NTE273 O202N TO202N NTE272 ic 555 audio amplifiers

    Complementary Darlington Audio Power Amplifier

    Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555
    Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.


    Original     		PDF NTE272 NTE273 200mA 500mA NTE273 O202N Complementary Darlington Audio Power Amplifier PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 application note ic 555

    Untitled

    Abstract: No abstract text available
    Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.


    Original     		PDF NTE272 NTE273 200mA 500mA NTE273

    NTE27C64-15D

    Abstract: nte27c64
    Text: NTE27C64−15D Integrated Circuit 64 Kbit 8Kb x 8 UV EPROM Description: The NTE27C64−15D is a 64Kbit UV EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 8,192 by 8 bits. This device has a


    Original     		PDF NTE27C64-15D NTE27C64-15D 64Kbit 28-Lead 100ns NTE27C64

    NTE27C256-70D

    Abstract: NTE27C256-15D NTE27C256-12D
    Text: NTE27C256−12D, NTE27C256−15D, NTE27C256−15P, NTE27C256−70D Integrated Circuit 256 Kbit 32Kb x 8 EPROM Description: The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D,


    Original     		PDF NTE27C256-12D, NTE27C256-15D, NTE27C256-15P, NTE27C256-70D NTE27C256 256Kbit 28-Lead NTE27C256-70D NTE27C256-15D NTE27C256-12D

    NTE2708

    Abstract: 1702 eprom 1702 eprom programmer 74LS
    Text: NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–


    Original     		PDF NTE2708 450ns NTE2708 1702 eprom 1702 eprom programmer 74LS

    Untitled

    Abstract: No abstract text available
    Text: NTE272 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)2 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25G h(FE) Max. Current gain.


    Original     		PDF NTE272

    Untitled

    Abstract: No abstract text available
    Text: NTE271 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1G h(FE) Max. Current gain.


    Original     		PDF NTE271

    Untitled

    Abstract: No abstract text available
    Text: NTE27C256−12D, NTE27C256−15D, NTE27C256−15P, NTE27C256−70D Integrated Circuit 256 Kbit 32Kb x 8 EPROM Description: The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D,


    Original     		PDF NTE27C256â NTE27C256 256Kbit

    NTE2732A

    Abstract: NTE3880 Nte388
    Text: NTE2732A Integrated Circuit 32K 4K x 8 NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate


    Original     		PDF NTE2732A NTE2732A 200ns, NTE3880. Note12. Note13. NTE3880 Nte388

    NTE2716

    Abstract: No abstract text available
    Text: NTE2716 Integrated Circuit NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384–bit 2048 x 8–bit Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows


    Original     		PDF NTE2716 NTE2716 350ns

    NTE270

    Abstract: No abstract text available
    Text: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.


    Original     		PDF NTE270 NTE271 NTE270

    nte278

    Abstract: No abstract text available
    Text: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:


    Original     		PDF NTE278 200mA. 200MHz 1200MHz 360mA, 216MHz

    NTE2764

    Abstract: No abstract text available
    Text: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers


    Original     		PDF NTE2764 200ns NTE2764 NTE2764s

    Untitled

    Abstract: No abstract text available
    Text: NTE27 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)170 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF NTE27

    Untitled

    Abstract: No abstract text available
    Text: NTE270 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1G h(FE) Max. Current gain.


    Original     		PDF NTE270

    Untitled

    Abstract: No abstract text available
    Text: NTE275 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)4 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.3GÂ h(FE) Max. Current gain.


    Original     		PDF NTE275

    germanium Power Transistor

    Abstract: Vcb-60V NTE27 Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE27 NTE27 germanium Power Transistor Vcb-60V Germanium power

    nte278

    Abstract: No abstract text available
    Text: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:


    Original     		PDF NTE278 NTE278 200mA. 200MHz 1200MHz 216MHz

    NTE2764

    Abstract: No abstract text available
    Text: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers


    Original     		PDF NTE2764 200ns NTE2764 NTE2764s

    germanium Power Transistor

    Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE27 NTE27 germanium Power Transistor pnp germanium transistor germanium transistor pnp GERMANIUM TRANSISTOR Germanium power

    Untitled

    Abstract: No abstract text available
    Text: NTE276 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)1.2k V(RRM) Max. (V) I(T) Rated Maximum (A)5.0² @Temp. (øC) (Test Condition) I(TSM) Max. (A)80 @ t(w) (s) (Test Condition) I(GT) Max. (A)120m V(GT) Max.(V)1.5 I(H) Max. (A) Holding Current300mÂ


    Original     		PDF NTE276 Current300mà StyleTO-66 Code3-23

    nte280

    Abstract: nte291
    Text: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280


    OCR Scan     		PDF 280MP NTE274) NTE281) NTE280 284MP 281MCP NTE291) 292MCP NTE292 NTE291 nte280 nte291

    Untitled

    Abstract: No abstract text available
    Text: _ _ N T E ELECTRONICS T n C 17E" NMOS 32K UV EPROM. ZOOnS i . 24-LEAD DIP, SEE DIAG 300 . • ¿43155*1 GOQElflb MOS, 1400-BIT SERIAL EAROM, 2.0nS . . 14-LEAD DIP, SEE DIAG 247 NTE2764 NTE2800 ‘ U u ■ 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7


    OCR Scan     		PDF 1400-BIT 14-LEAD NTE2764 NTE2800 NTE2732A 200nS 28-LEAD 24-LEAD 40-LEAD NTE6502