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NTE Electronics Inc NTE3311 Trans IGBT Chip N-CH 600V 25A 150W 3-Pin(3+Tab) TO-3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	NTE3311		22		3	1 - 10 $1.907 100 $1.907 1000 $1.907 10000 $1.907	Buy Now
Arrow Electronics	NTE3311		22		1	1 $1.907 10 $1.907 100 $1.907 1000 $1.907 10000 $1.907	Buy Now
Newark	NTE3311	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE3311		2			1 $16.41 10 $14.92 100 $11.66 1000 $10.45 10000 $10.45	Buy Now
NTE Electronics Inc NTE330 Transistor, bjt, pnp,40V V(Br)Ceo,25A I(C),to-36 \|Nte Electronics NTE330
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE330	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE330		2			1 $38.74 10 $34.03 100 $27.72 1000 $26.2 10000 $26.2	Buy Now
Bristol Electronics	NTE330		6		1	1 $36 10 $36 100 $36 1000 $36 10000 $36	Buy Now
	NTE330		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NTE330		4			1 $39 10 $39 100 $39 1000 $39 10000 $39	Buy Now
	NTE330		1			1 $33.264 10 $33.264 100 $33.264 1000 $33.264 10000 $33.264	Buy Now
NTE Electronics Inc NTE333 Transistor, bjt, npn,18V V(Br)Ceo,15A I(C),sot-123 \|Nte Electronics NTE333
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE333	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE333		2			1 $151.14 10 $128.98 100 $116.7 1000 $113.6 10000 $113.6	Buy Now
Quest Components	NTE333		9			1 $110.487 10 $101.988 100 $101.988 1000 $101.988 10000 $101.988	Buy Now
NTE Electronics Inc NTE335 Transistor, bjt, npn,25V V(Br)Ceo,20A I(C),sot-121 \|Nte Electronics NTE335
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE335	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE335		1			1 $196.34 10 $167.56 100 $149.33 1000 $149.33 10000 $149.33	Buy Now
Bristol Electronics	NTE335		2		1	1 $120 10 $120 100 $120 1000 $120 10000 $120	Buy Now
Quest Components	NTE335		3			1 $167.58 10 $167.58 100 $167.58 1000 $167.58 10000 $167.58	Buy Now
NTE Electronics Inc NTE338 Transistor, bjt, npn,24V V(Br)Ceo,3.5A I(C),sot-122 \|Nte Electronics NTE338
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE338	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE338		14			1 $61.15 10 $48.61 100 $42.5 1000 $41.34 10000 $41.34	Buy Now
Bristol Electronics	NTE338		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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NTE33 Datasheets (27)

Part	Manufacturer	Description	Datasheet Type	PDF
NTE330	NTE Electronics	Germanium PNP Transistor High Power Switch	Original	PDF
NTE330	NTE Electronics	Bipolar Transistors	Scan	PDF
NTE3300	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF
NTE3301	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF
NTE3302	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF
NTE3303	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF
NTE331	NTE Electronics	Silicon Complementary Transistors Audio Power Amp, Switch	Original	PDF
NTE331	NTE Electronics	Bipolar Transistors	Scan	PDF
NTE331	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, Audio Power Amp Switch, Pkg Style TO220	Scan	PDF
NTE3310	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF
NTE3311	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF
NTE3312	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF
NTE331MP	NTE Electronics	Bipolar Transistors	Scan	PDF
NTE332	NTE Electronics	Silicon Complementary Transistor Audio Power Amp, Switch	Original	PDF

NTE332	NTE Electronics	Bipolar Transistors	Scan	PDF
NTE332	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Audio Power Amp Switch, Pkg Style TO220	Scan	PDF
NTE3320	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF
NTE3321	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF
NTE3322	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF
NTE3323	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF

NTE33 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTE338F Abstract: No abstract text available Text: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP	Original	PDF	NTE338F NTE338F 30MHz. 30MHz -30dB 001MHz 30MHz
NTE3303 Abstract: No abstract text available Text: NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3303 NTE3303
PO 168 Abstract: 8-32-NC-3A Transistor 168 NTE338 8-32NC-3A Text: NTE338 Silicon NPN Transistor RF Power Amp Driver PO = 20W Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V	Original	PDF	NTE338 8-32-NC-3A PO 168 8-32-NC-3A Transistor 168 NTE338 8-32NC-3A
NTE3321 Abstract: No abstract text available Text: NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3321 NTE3321
NTE3323 Abstract: No abstract text available Text: NTE3323 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3323 NTE3323
pnp germanium to36 Abstract: NTE330 Germanium power Text: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.	Original	PDF	NTE330 NTE330 pnp germanium to36 Germanium power
high speed diode 15A Abstract: NTE3303 Text: NTE3303 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3303 high speed diode 15A NTE3303
10a 400v bipolar transistor Abstract: NTE3300 nte33 Text: NTE3300 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3300 10a 400v bipolar transistor NTE3300 nte33
074c Abstract: NTE3322 Text: NTE3322 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch TO3PBL Features: D Enhancemnt Mode Type D FRD Included Bwetwen Emitter and Collector D High Speed D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3322 -20A/s 074c NTE3322
NTE3321 Abstract: No abstract text available Text: NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3321 NTE3321
Untitled Abstract: No abstract text available Text: NTE3303 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3303
Untitled Abstract: No abstract text available Text: NTE3312 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3312
NTE3322 Abstract: No abstract text available Text: NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3322 NTE3322
8-32NC-3A Abstract: NTE337 8-32-NC-3A 8w RF POWER TRANSISTOR NPN Text: NTE337 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large– signal amplifier driver and pre–driver stages. This device is intended for use in industrial communications equipment operating at frequencies to 80MHz.	Original	PDF	NTE337 NTE337 80MHz. 50MHz 36erwise 50MHz 800mW, 8-32NC-3A 8-32-NC-3A 8w RF POWER TRANSISTOR NPN

NTE3320 Abstract: No abstract text available Text: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3320 NTE3320
NTE3312 Abstract: NTE331 Text: NTE3312 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3312 NTE3312 NTE331
NTE3311 Abstract: NTE331 Text: NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3311 NTE3311 NTE331
NTE338F Abstract: 20W power transistor Text: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP	Original	PDF	NTE338F NTE338F 30MHz. 30MHz 001MHz 30MHz 20W power transistor
NTE3320 Abstract: No abstract text available Text: NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3320 NTE3320
NTE335 Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent Text: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:	Original	PDF	NTE335 NTE336 NTE335 NTE336 30MHz. 30MHz 1817pF 777pF J341 NPN 250W n-p-n r.f. power transistors J201 equivalent
Untitled Abstract: No abstract text available Text: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3320
NTE3302 Abstract: No abstract text available Text: NTE3302 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3302 NTE3302
NTE3312 Abstract: nte33 Text: NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	PDF	NTE3312 NTE3312 nte33
NTE331 Abstract: NTE332 Text: NTE331 NPN & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications.	Original	PDF	NTE331 NTE332 NTE331 NTE332

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NTE33 Datasheets (27)

NTE33 Datasheets Context Search

NTE338F

NTE3303

PO 168

NTE3321

NTE3323

pnp germanium to36

high speed diode 15A

10a 400v bipolar transistor

074c

NTE3321

Untitled

Untitled

NTE3322

8-32NC-3A

NTE3320

NTE3312

NTE3311

NTE338F

NTE3320

NTE335

Untitled

NTE3302

NTE3312

NTE331