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    NTMFS4839NHT1G Search Results

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    NTMFS4839NHT1G Price and Stock

    Rochester Electronics LLC NTMFS4839NHT1G

    MOSFET N-CH 30V 9.5A/64A 5DFN
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    DigiKey NTMFS4839NHT1G Bulk 1,025
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    onsemi NTMFS4839NHT1G

    MOSFET N-CH 30V 9.5A/64A 5DFN
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    DigiKey NTMFS4839NHT1G Reel 1,500
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    Avnet Americas NTMFS4839NHT1G Reel 3,000
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    Bristol Electronics NTMFS4839NHT1G 1,498 8
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    • 10 $0.675
    • 100 $0.4388
    • 1000 $0.189
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    Quest Components NTMFS4839NHT1G 1,198
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    Rochester Electronics NTMFS4839NHT1G 735,321 1
    • 1 $0.2817
    • 10 $0.2817
    • 100 $0.2648
    • 1000 $0.2394
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    Aptina Imaging NTMFS4839NHT1G

    Trans MOSFET N-CH 30V 15A 5-Pin(4+Tab) SO-FL T/R
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    Verical NTMFS4839NHT1G 585,000 1,254
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    NTMFS4839NHT1G 144,321 1,254
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    NTMFS4839NHT1G 3,000 1,254
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    NTMFS4839NHT1G 3,000 1,254
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    NTMFS4839NHT1G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTMFS4839NHT1G On Semiconductor Power MOSFET 30 V, 66 A, Single N-Channel Original PDF

    NTMFS4839NHT1G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4839Nh

    Abstract: NTMFS4839NHT1G
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features •ăLow RDS ON to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices*


    Original
    PDF NTMFS4839NH NTMFS4839NH/D 4839Nh NTMFS4839NHT1G

    4839Nh

    Abstract: NTMFS4839NHT1G NTMFS4839NHT3G
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original
    PDF NTMFS4839NH AND8195/D NTMFS4839NH/D 4839Nh NTMFS4839NHT1G NTMFS4839NHT3G

    NTMFS4839NHT1G

    Abstract: NTMFS4839NHT3G v2354
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original
    PDF NTMFS4839NH AND8195/D NTMFS4839NH/D NTMFS4839NHT1G NTMFS4839NHT3G v2354

    4839Nh

    Abstract: NTMFS4839NHT1G NTMFS4839NHT3G SO8FL
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features •ăLow RDS ON to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices*


    Original
    PDF NTMFS4839NH NTMFS4839NH/D 4839Nh NTMFS4839NHT1G NTMFS4839NHT3G SO8FL

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original
    PDF NTMFS4839NH AND8195/D NTMFS4839NH/D