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    NTY100N10G Search Results

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    NTY100N10G Price and Stock

    onsemi NTY100N10G

    MOSFET N-CH 100V 123A TO264
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    DigiKey NTY100N10G Tube
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    Verical NTY100N10G 2,692 41
    • 1 -
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    • 100 $8.975
    • 1000 $8.1125
    • 10000 $8.1125
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    Quest Components NTY100N10G 22
    • 1 $10.23
    • 10 $7.6725
    • 100 $7.6725
    • 1000 $7.6725
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    Rochester Electronics NTY100N10G 2,692 1
    • 1 $7.64
    • 10 $7.64
    • 100 $7.18
    • 1000 $6.49
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    Rochester Electronics LLC NTY100N10G

    MOSFET N-CH 100V 123A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTY100N10G Tube 38
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    • 100 $7.95
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    NTY100N10G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTY100N10G On Semiconductor Transistor Mosfet N-CH 100V 123A 3TO-264 RAIL Original PDF

    NTY100N10G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN569

    Abstract: NTY100N10 NTY100N10G V15020
    Text: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V Typ • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode


    Original     		NTY100N10 NTY100N10/D AN569 NTY100N10 NTY100N10G V15020 PDF

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V Typ • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode


    Original     		NTY100N10 NTY100N10/D PDF

    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


    Original     		SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a PDF