OPTIMOS p3
Abstract: BSB029P03NX3 BSB029P03NX3G
Text: n-Channel Power MOSFET OptiMOS BSB029P03NX3 Data Sheet 1.92, 2011-03-21 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB029P03NX3 G 1 Description OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for highest power density and energy efficient solutions. Lowest on state resistance
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BSB029P03NX3
BSB029P03NX3
OPTIMOS p3
BSB029P03NX3G
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BSB027P03LX3G
Abstract: infineon MOSFET parameter test BSB027P03LX3
Text: p-Channel Power MOSFET OptiMOS P3 BSB027P03LX3 G Data Sheet 1.9, 2011-03-02 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB027P03LX3 G 1 Description OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for highest power density and energy efficient solutions. Lowest on state resistance
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BSB027P03LX3
BSB027P03LX3G
infineon MOSFET parameter test
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Untitled
Abstract: No abstract text available
Text: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features • Complementary P + N channel · Enhancement mode VDS · Logic level 4.5V rated RDS(on),max · Avalanche rated P N -30 30 V VGS=±10 V 80 57 mW VGS=±4.5 V 130 93 -2.0
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BSL308C
IEC61249-2-21
H6327:
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BSL308C
Abstract: HLG09283 L6327
Text: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features P N -30 30 V V GS=±10 V 80 57 mΩ V GS=±4.5 V 130 93 -2.0 2.3 • Complementary P + N channel · Enhancement mode V DS · Logic level 4.5V rated R DS(on),max · Avalanche rated
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BSL308C
L6327:
BSL308C
HLG09283
L6327
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80n03
Abstract: OPTIMOS p3 OPTIMOS OPTIMOS pfet3 to220b
Text: OptiMOS / OptiMOS-T - Naming System S ! products developed before 2004 I ! products developed in 2004 and later I P B 80 N 03 S2 L 03 Device: P for Power-MOSFET Package Type: P for TO220 B for TO263/D²PAK D for DPAK TO252 I for IPAK (TO262) C for SuperSO8 (tbd)
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O263/D
80n03
OPTIMOS p3
OPTIMOS
OPTIMOS pfet3
to220b
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JESD22-A114
Abstract: No abstract text available
Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A
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BSO080P03NS3
080P3NS
JESD22-A114
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IEC61249-2-21
Abstract: JESD22-A114
Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8
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BSO080P03NS3E
IEC61249-2-21
080P3NSE
IEC61249-2-21
JESD22-A114
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D148
Abstract: JESD22-A114 080P3NSE
Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A
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BSO080P03NS3E
080P3NSE
D148
JESD22-A114
080P3NSE
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Untitled
Abstract: No abstract text available
Text: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features VDS • Dual P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V VGS=-10 V 80 mW VGS=-4.5 V 130 ID -2.0 A • ESD protected PG-TSOP-6 • Qualified according to AEC Q101
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BSL308PE
IEC61249-2-21
H6327:
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DD108
Abstract: No abstract text available
Text: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101
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BSL308PE
L6327:
-200A/
150tact
DD108
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Untitled
Abstract: No abstract text available
Text: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101
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BSL308PE
L6327:
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IEC61249-2-21
Abstract: JESD22-A114
Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A
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BSO080P03NS3
IEC61249-2-21
080P3NS
IEC61249-2-21
JESD22-A114
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JESD22-A114
Abstract: No abstract text available
Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A
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BSO080P03NS3E
080P3NSE
JESD22-A114
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JESD22-A114
Abstract: d148
Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A
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080P3NS
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080P3NS
Abstract: GS-10
Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1 for target applications • 150°C operating temperature RDS on),max -30 V VGS=-10 V 8.0 mW VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications
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BSO080P03NS3
IEC61249-2-21
080P3NS
080P3NS
GS-10
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f21a
Abstract: No abstract text available
Text: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101
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BSL308PE
L6327:
-200A/
150nces.
f21a
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BSS308PE
Abstract: JESD22-A114 L6327 Q101-3 kv 201-t
Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-SOT-23 • Qualified according to AEC Q101
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BSS308PE
PG-SOT-23
L6327:
BSS308PE
JESD22-A114
L6327
Q101-3
kv 201-t
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PG-SOT23
Abstract: BSS308PE L6327
Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101
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BSS308PE
PG-SOT23
L6327:
PG-SOT23
BSS308PE
L6327
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f21 diode sot23
Abstract: f21 diode marking YFs
Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101
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BSS308PE
PG-SOT23
L6327:
-200A/
f21 diode sot23
f21 diode
marking YFs
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Untitled
Abstract: No abstract text available
Text: Product specification BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101
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BSS308PE
PG-SOT-23
IEC61249-2-21
PG-SOT23
H6327:
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BSS308PE H6327
Abstract: No abstract text available
Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101
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BSS308PE
IEC61249-2-21
PG-SOT-23
PG-SOT23
H6327:
BSS308PE H6327
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Untitled
Abstract: No abstract text available
Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID A • ESD protected PG-SOT-23 • Qualified according to AEC Q101
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BSS308PE
PG-SOT-23
IEC61249-2-21
PG-SOT23
H6327:
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BSS308PE
Abstract: JESD22-A114 L6327
Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-SOT-23 • Qualified according to AEC Q101
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BSS308PE
PG-SOT-23
L6327:
BSS308PE
JESD22-A114
L6327
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BSL308PE
Abstract: JESD22-A114 L6327
Text: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-TSOP-6 • Qualified according to AEC Q101
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BSL308PE
L6327:
BSL308PE
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L6327
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