TC227
Abstract: No abstract text available
Text: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
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IRFR9220,
IRFU9220
TA17502.
TC227
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Untitled
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024
IRFR9024*
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IRFR9024
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024*
IRFR9024
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IRFF9024
Abstract: No abstract text available
Text: IRFF9024 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.
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IRFF9024
O205AF)
11-Oct-02
IRFF9024
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IRFF9110
Abstract: No abstract text available
Text: IRFF9110 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.
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IRFF9110
O205AF)
11-Oct-02
IRFF9110
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IRFF9220
Abstract: No abstract text available
Text: IRFF9220 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.
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IRFF9220
O205AF)
11-Oct-02
IRFF9220
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IRFD9220
Abstract: No abstract text available
Text: IRFD9220 Data Sheet January 2002 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFD9220
IRFD9220
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IRFR9110
Abstract: irfu9110 irfu9220 IRFR91109A TA17541 TB334 TC227
Text: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power
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IRFR9110,
IRFU9110
IRFR9110
irfu9110
irfu9220
IRFR91109A
TA17541
TB334
TC227
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IRF5820
Abstract: SI3443DV IRF5800 IRF5850
Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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3947A
IRF5850
IRF5850
OT-23
IRF5820
SI3443DV
IRF5800
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IRF9540 application
Abstract: IRF9540 mosfet data sheet IRF9540 IRF9540 RF1S9540 RF1S9540SM RF1S9540SM9A TA17521 TB334
Text: IRF9540, RF1S9540SM Data Sheet 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF9540,
RF1S9540SM
TA17521.
IRF9540 application
IRF9540 mosfet
data sheet IRF9540
IRF9540
RF1S9540
RF1S9540SM
RF1S9540SM9A
TA17521
TB334
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irfu9220
Abstract: irfu9110 la 4001 IRFR9110 IRFR91109A TA17541 TB334
Text: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power
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IRFR9110,
IRFU9110
irfu9220
irfu9110
la 4001
IRFR9110
IRFR91109A
TA17541
TB334
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IRFF9220
Abstract: No abstract text available
Text: IRFF9220 Data Sheet January 2002 -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs Features • -2.5A, -200V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are P-Channel
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IRFF9220
-200V,
-200V
TA17502.
IRFF9220
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irf9620
Abstract: No abstract text available
Text: IRF9620 Data Sheet Title F96 bt A, 0V, 00 m, July 1999 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of
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IRF9620
TA17502.
irf9620
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IRF9540 application
Abstract: IRF9540 mosfet TA17521 data sheet IRF9540 irf9540 RF1S9540 RF1S9540SM RF1S9540SM9A TB334
Text: IRF9540, RF1S9540SM Data Sheet Title F95 1S9 0SM bt A, 0V, 00 m, 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified
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IRF9540,
RF1S9540SM
TA17521.
TB334
IRF9540
O-220AB
O-263AB
IRF9540 application
IRF9540 mosfet
TA17521
data sheet IRF9540
irf9540
RF1S9540
RF1S9540SM
RF1S9540SM9A
TB334
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Untitled
Abstract: No abstract text available
Text: IRFF9130 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF9130
-100V,
-100V
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IRF7425
Abstract: MS-012AA
Text: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
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IRF7425
IRF7425
MS-012AA
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Untitled
Abstract: No abstract text available
Text: IRFD9220 Data Sheet Title FD 20 bt A, 0V, 00 m, July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFD9220
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P-channel power mosfet irf
Abstract: IRF5800
Text: PD - 93850 IRF5800 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω T o p V ie w Description These P-channel MOSFETs from International Rectifier
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IRF5800
OT-23.
P-channel power mosfet irf
IRF5800
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IRF4435
Abstract: IR*435 MS-012AA
Text: PD- 94243 IRF4435 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS on = 0.020Ω T o p V ie w Description These P-channel HEXFET® Power MOSFETs from
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IRF4435
IRF4435
IR*435
MS-012AA
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Untitled
Abstract: No abstract text available
Text: IRFP9140 Semiconductor April 1999 Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel
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IRFP9140
-100V,
O-247
-100V
200i2
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IRFD9020
Abstract: No abstract text available
Text: Tem ic IRFD9020 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ^ ) I d (A) -5 0 0.28 - 1 .6 S o 4-Pin DIP • — |P G 0 - 1|— Ï1D u ; Top View D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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IRFD9020
P-36852--Rev.
IRFD9020
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transistor mosfet irf9530
Abstract: IRF9530 transistor irf9530
Text: Tem ic IRF9530 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) -1 0 0 0.30 -1 2 TO-220AB “ Ö " Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Parameter Symbol
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IRF9530
O-220AB
P-36852--Rev.
transistor mosfet irf9530
IRF9530 transistor
irf9530
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RF710
Abstract: irf7317
Text: PD - 9.1568B In terna tional IOR Rectifier IRF7317 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MO SFET un di g N-Ch P-Ch 20V -2 0 V ~m D1 1 m~-
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1568B
IRF7317
RF710
irf7317
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IRF9233
Abstract: No abstract text available
Text: IRF9230, IRF9231, IRF9232, IRF9233 HARRIS S E M I C O N D U C T O R -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon
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IRF9230,
IRF9231,
IRF9232,
IRF9233
-150V
-200V,
TA17512.
RF9231,
RF9232,
IRF9233
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