FMMT5401
Abstract: FMMT5550 FMMT5551 FMMT5400
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMT5550 FMMT5551 ISSUE 4 - NOVEMBER 1996 ✪ PARTMARKING DETAILS - COMPLEMENTARY TYPES - FMMT5550 1FZ FMMT5551 ZG1 E C FMMT5550 FMMT5400 FMMT5551 FMMT5401 B ABSOLUTE MAXIMUM RATINGS. PARAMETER
|
Original
|
PDF
|
FMMT5550
FMMT5551
FMMT5400
FMMT5401
FMMT5550
FMMT5401
FMMT5551
FMMT5400
|
BC848 equivalent
Abstract: bc847 X10-4 BC849C-2C spice bc847 BC846B BC847A BC847C BC848A BC848C
Text: SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC846 BC848 BC850 ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS BC847 BC849 COMPLEMENTARY TYPES BC846AZ1A BC848B1K BC846 BC856 BC846B1B BC848CZ1L BC847 BC857 BC847AZ1E BC849B2B BC848 BC858 BC847B1F
|
Original
|
PDF
|
BC846
BC848
BC850
BC847
BC849
BC846AZ1A
BC848B1K
BC856
BC846B1B
BC848 equivalent
bc847
X10-4
BC849C-2C
spice bc847
BC846B
BC847A
BC847C
BC848A
BC848C
|
SEM t11
Abstract: A12L A13L IDT70V639 IDT70V639S 70V639S10
Text: PRELIMINARY IDT70V639S HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.
|
Original
|
PDF
|
IDT70V639S
10/12/15ns
12/15ns
IDT70V639
SEM t11
A12L
A13L
IDT70V639S
70V639S10
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V PRELIMINARY 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
|
Original
|
PDF
|
512/256/128K
IDT70T3339/19/99S
200MHz
166MHz
133MHz)
14Gbps
and613
|
A12L
Abstract: IDT70V639 IDT70V639S 70V639S12 D 5621
Text: HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM IDT70V639S Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max. – Industrial: 12/15ns (max.)
|
Original
|
PDF
|
IDT70V639S
10/12/15ns
12/15ns
IDT70V639
A12L
IDT70V639S
70V639S12
D 5621
|
70V24
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM IDT70V24S/L Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/25/35/55ns (max.)
|
Original
|
PDF
|
IDT70V24S/L
15/20/25/35/55ns
20/25/35/55ns
IDT70V24S
400mW
IDT70V24L
380mW
IDT70V24
IDT70V24S/L
70V24
|
5652
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V PRELIMINARY 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
|
Original
|
PDF
|
512/256/128K
IDT70T3339/19/99S
200MHz
166MHz
133MHz)
14Gbps
70T3319
5652
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM IDT70V639S Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max. – Industrial: 12/15ns (max.)
|
Original
|
PDF
|
IDT70V639S
10/12/15ns
12/15ns
IDT70V639
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
|
Original
|
PDF
|
512/256/128K
IDT70T3339/19/99S
200MHz
166MHz
133MHz)
14Gbps
|
70V659
Abstract: A12L IDT70V659 IDT70V659S 70V659S15
Text: PRELIMINARY IDT70V659S HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.
|
Original
|
PDF
|
IDT70V659S
10/12/15ns
12/15ns
IDT70V659
208-ball
BF-208)
208-pin
DR-208)
256-ball
BC-256)
70V659
A12L
IDT70V659S
70V659S15
|
5652
Abstract: IDT70T3319 IDT70T3399
Text: HIGH-SPEED 2.5V PRELIMINARY 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
|
Original
|
PDF
|
512/256/128K
IDT70T3339/19/99S
200MHz
166MHz
133MHz)
14Gbps
5652
IDT70T3319
IDT70T3399
|
70V659S12
Abstract: 70V659 A12L IDT70V659 IDT70V659S
Text: PRELIMINARY IDT70V659S HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.
|
Original
|
PDF
|
IDT70V659S
10/12/15ns
12/15ns
IDT70V659
70V659S12
70V659
A12L
IDT70V659S
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM IDT70V639S Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max. – Industrial: 12/15ns (max.)
|
Original
|
PDF
|
IDT70V639S
10/12/15ns
12/15ns
IDT70V639
|
IDT70T3319
Abstract: IDT70T3399
Text: HIGH-SPEED 2.5V 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
|
Original
|
PDF
|
512/256/128K
IDT70T3339/19/99S
200MHz
166MHz
133MHz)
14Gbps
IDT70T3319
IDT70T3399
|
|
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM IDT70V639S Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max. – Industrial: 12/15ns (max.)
|
Original
|
PDF
|
IDT70V639S
10/12/15ns
12/15ns
IDT70V639
|
B 660 TG
Abstract: No abstract text available
Text: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
PDF
|
BC847
BC849
BC846
BC848
BC850
BC848B
BC846A
BC846B
BC848C
BC849B
B 660 TG
|
FMMT5551
Abstract: No abstract text available
Text: FM M T5550 FMMT5551 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTO RS PARTMARKING DETAILS: FM M T 5550 - 1F FMMT5551 - G1 ABSOLUTE M AXIMUM RATINGS PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current
|
OCR Scan
|
PDF
|
T5550
FMMT5551
FMMT5551
FMMT5550
FMMT5551j
DS226
|
BC850 SOT23
Abstract: No abstract text available
Text: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C
|
OCR Scan
|
PDF
|
BC846A-Z1A
BC846B-1B
BC847A-Z1E
BC847B-1F
BC847C-1GZ
BC848A-1JZ
BC848B-1K
BC848C-Z1L
BC849B-2B
BC849C-2C
BC850 SOT23
|
FZT869
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT869 - ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36m ii at 5A * * * 7 Amp continuous collector current (20 Amp peak) Very low saturation voltages
|
OCR Scan
|
PDF
|
OT223
FZT869
ic-20
100mA.
50MHz
100mA
100mA,
300fis.
FZT869
|
Untitled
Abstract: No abstract text available
Text: g § "\ HIGH-SPEED y 2K X 8 FOURPORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • High-speed access — Military: 35/45ns max. — Com mercial: 25/35/45ns (max.) • Low-power operation — IDT7052S Active: 750m W (typ.) Standby: 10m W (typ.)
|
OCR Scan
|
PDF
|
35/45ns
25/35/45ns
IDT7052S
IDT7052L
GD17472
IDT7052S/L
MIL-STD-883,
108-Pin
G108-1)
132-Pin
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT70927S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported m em ory cells which allow sim ulta neous access of the sam e m em ory location • H igh-speed clock to data access
|
OCR Scan
|
PDF
|
IDT70927S/L
25/30ns
IDT70927S
IDT70927L
IDT70927
100-pin
108-pin
G108-1)
16-Bit)
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 64K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT70908S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported m em ory cells which allow sim ulta neous access of the sam e m em ory location • H igh-speed clock to data access
|
OCR Scan
|
PDF
|
IDT70908S/L
25/30ns
IDT70908S
IDT70908L
IDT70908
100-pin
PN100-1)
84-pin
G84-3)
|
3742DM
Abstract: No abstract text available
Text: HIGH-SPEED 2K X 16 DUAL-PORT STATIC RAM PRELIMINARY IDT71V33S/L IDT71V43S/L Integrated Device Technology, Inc. FEATURES: • High-speed access — Commercial: 25/35/55ns max. • Low-power operation — IDT71V33/43S Active: 750 mW (typ.) Standby: 3.3mW (typ.)
|
OCR Scan
|
PDF
|
IDT71V33S/L
IDT71V43S/L
25/35/55ns
IDT71V33/43S
IDT71V33/43L
750mW
IDT71V33
IDT71V43
IDT71V33;
3742DM
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT70927S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported m em ory cells w hich allow sim ulta neous access of the sam e m em ory location • H igh-speed clock to data access
|
OCR Scan
|
PDF
|
IDT70927S/L
25/30ns
IDT70927S
IDT70927L
IDT70927
108-pin
G108-1)
100-pin
PN100-1)
16-Bit)
|