W9V332647HA-333
Abstract: W9V332647HA 32X64 079R 32MX64 PC133-333 tt12ns
Text: REVISION DATE REV DESCRPTION ZONE I. DESCRIPTION: APPVD NR Changed part number 1/29/01 5/11/01 III. TIMING MODULE LEVEL : Ÿ W9V332647HA-333 is a 32MX64 industry standard 144-pin PC133 SDRAM SODIMM Ÿ Manufactured with 8 32MX8 400-mil TSOPII-54 PC133-333 Synchronous DRAM devices
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W9V332647HA-333
32MX64
144-pin
PC133
32MX8
400-mil
TSOPII-54
PC133-333
133MHz
W9V332647HA-333
W9V332647HA
32X64
079R
tt12ns
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MO-161
Abstract: PC100-222 PC133-222 PC133-333 TSOP54
Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP • PC100-222, PC133-333 and PC133-222
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64V8301GU
64-Bit
168-pin
PC100-222,
PC133-333
PC133-222
PC133
PC100
PC133
MO-161
PC100-222
PC133-222
TSOP54
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PC133-333
Abstract: No abstract text available
Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank, 64MByte SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP 2 • PC100-222, PC133-333 and PC133-222
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64V8301GU
64-Bit
64MByte
168-pin
PC100-222,
PC133-333
PC133-222
PC133
PC100
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Untitled
Abstract: No abstract text available
Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank, 64MByte SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP 2 • PC100-222, PC133-333 and PC133-222
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64V8301GU
64-Bit
64MByte
168-pin
PC100-222,
PC133-333
PC133-222
PC133
PC100
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PC133-222-520
Abstract: PC133-333 PC133-333-520 PC100-222-620 MO-161 PC100-222 PC133-222 TSOP54
Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank, 64MByte SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP 2 • PC100-222, PC133-333 and PC133-222
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64V8301GU
64-Bit
64MByte
168-pin
PC100-222,
PC133-333
PC133-222
PC133
PC100
PC133-222-520
PC133-333-520
PC100-222-620
MO-161
PC100-222
PC133-222
TSOP54
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079R
Abstract: PC-100 PC133-333 ZD064M26H
Text: REVISIONS REV DATE ZONE I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ APPVD III. TIMING TYPE W9D308647PA-333 is a 8Mx64 industry standard 168-pin PC133-333 SDRAM DIMM Manufactured with 4 8Mx16 400-mil TSOPII-54 133MHz Synchronous DRAM devices of 12-row, 11-column, 4-bank addressing.
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W9D308647PA-333
8Mx64
168-pin
PC133-333
8Mx16
400-mil
TSOPII-54
133MHz
12-row,
11-column,
079R
PC-100
ZD064M26H
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w9v308647pa-333
Abstract: 079R wintec 8MX16
Text: REVISIONS REV DATE DESCRIPTION ZONE III. TIMING MODULE LEVEL : I. DESCRIPTION: Ÿ APPVD NR 6/1/00 TYPE W9V308647PA-333 is a 8MX64 industry standard 144-pin SDRAM SODIMM for PC133 CL=3 CL=2 Clock Cycle Time: (min) 7.5ns 10ns Clock Fre quency: (max) 133MHz
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W9V308647PA-333
8MX64
144-pin
PC133
133MHz
100MHz
8MX16
400-mil
TSOPII-54
133/100MHz
079R
wintec
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079R
Abstract: 16MX64 16MX8 16X64 W9V316647 W9V316647LA-333
Text: REVISION DATE REV DESCRPTION ZONE 2/8/00 APPVD NR III. TIMING: I. DESCRIPTION: Ÿ W9V316647LA-333 is a 16MX64 industry standard 144-pin PC133 SDRAM SODIMM Ÿ Manufactured with 8 16MX8 400-mil TSOPII-54 Synchronous DRAM devices TYPE CL=3 Clock Cycle Time: min
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W9V316647LA-333
16MX64
144-pin
PC133
16MX8
400-mil
TSOPII-54
133MHz
W9V316647LA-333
V316647LA-333
079R
16X64
W9V316647
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ELPIDA
Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
Text: SELECTION GUIDE DRAM Selection Guide Document No. E0226E80 Ver.8.0 Date Published June 2002 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2001-2002 DRAM Selection Guide CONTENTS 1. SDRAM . 4
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E0226E80
M01E0107
ELPIDA
EDS5104ABTA
EDS5108ABTA
PC800
ELPIDA DRAM selection guide
1gb 144pin pc133 so dimm
200pin SO DIMM
sdram elpida
EDS5116ABTA
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q1257
Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
Text: 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed
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2002791-D-RAM
hoch17
DDR400
PC3200)
B112-H6731-G10-X-7600
q1257
Q1129
Q4331
TSOP66
Q4311
tsop 4021
tsop ddr2 ram
DDR RAM 512M
DRAM spectrum infineon
TSOP-66
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512m pc133 SDRAM DIMM
Abstract: TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash
Text: Product Information 2004 MEMORY SPECTRUM w w w. i n f i n e o n . c o m / m e m o r y w w w. i n f i n e o n . c o m / m e m o r y / f l a s h Never stop thinking. Introduction A P R I L 2 0 0 4 . This edition of Memory Spectrum has been developed to enable you to easily view the entire range of Infineon’s memory products.
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DDR400
PC3200)
B166-H8399-X-X-7600
512m pc133 SDRAM DIMM
TSOP 66 Package
TSOP 54 Package
DIMM DDR400 PC3200
1 gb ddr2 ram
DDR400 infineon
HYF33DS512800ATC
16M x 16 DDR TSOP-66
P-TSOPI-48
infineon twinflash
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viking pc100
Abstract: tsop 338 dtx 360
Text: PC100/PC133 ECC REGISTERED DIMM VR8ARxx7238xTx MODULE CONFIGURATIONS VMS Part Number Capacity Module Configuration Device Configuration Device Package Module Ranks 128MB 16Mx72 16M x 8 9 TSOP 1 VR8AR167238CTC VR8AR167238CTD Performance CAS Latency PC100
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PC100/PC133
VR8ARxx7238xTx
128MB
16Mx72
VR8AR167238CTD
PC100
VR8AR167238CTC
PC133
VR8AR167238CTE
viking pc100
tsop 338
dtx 360
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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PC100
Abstract: pc133 SDRAM DIMM package 128MB
Text: SDRAM Module Code Information Last Updated : August 2009 MXXXXXXXXXXX - XXXXX 1 2 3 5 4 6 7 1. Memory Module M 2. Module Configuration 3 : 4/8 Byte DIMM (100, 168, 200, 232, 278pin) 4 : 8 Byte SODIMM (144pin) 3~4. Data bits 23 : x144/ECC PLL+Register DIMM
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278pin)
144pin)
x144/ECC
PC100
x72/ECC
200pin
168pin
128Mb/512Mb)
pc133 SDRAM DIMM package
128MB
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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32MX64
Abstract: pc133 256 MB SDRAM SODIMM package SO-DIMM 144-pin
Text: 3.3V SDRAM Modules HYS64V32220GCDL • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 non-parity module organisation • suitable for use in PC100 and PC133 applications • Performance:
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HYS64V32220GCDL
PC100
PC133
256MB
PC100
PC133
GLD09192
32MX64
pc133 256 MB SDRAM SODIMM package
SO-DIMM 144-pin
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PC100-222
Abstract: PC133-333 TSOP54 HYS64V32220GD-7 HYS64V32220GD-8-C2 HYS64V32220GDL-8
Text: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100/PC133 144 pin SO-DIMM SDRAM Modules Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 (256 MByte) non-parity module organisation
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HYS64V32220GD
256MB
PC100/PC133
PC133
PC100
PC100-222
PC133-333
TSOP54
HYS64V32220GD-7
HYS64V32220GD-8-C2
HYS64V32220GDL-8
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Untitled
Abstract: No abstract text available
Text: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100 144 pin SO-DIMM SDRAM Modules Preliminary Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 non-parity module organisation •
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256MB
PC100
HYS64V32220GD
PC133
256Mbit
MO-190)
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PD23C64020
Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Text: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed
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X13769XJ2V0CD00
A10BL
8K/64
256M5
PD45256441
54-pin
PC133
PC100
MC-22000
PD23C64020
PD45D128442
4M84
PD45D128842
0443 IC
PD23C64000AL
45V16A
PD264
A80L
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HYS64V16220GDL
Abstract: HYS64V16220GDL-7 HYS64V16220GDL-8
Text: 3.3V SDRAM Modules HYS64V16220GDL 144 pin SO-DIMM SDRAM Modules PC100 / PC133 128 MB density Target Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • two bank 16M x 64 non-parity module organisation
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HYS64V16220GDL
PC100
PC133
PC133
PC100
8Mx64
DM144-9
HYS64V16220GDL
HYS64V16220GDL-7
HYS64V16220GDL-8
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A80L
Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
Text: CD-ROM用ICメモリ CD-ROM X13769XJ2V0CD00 04−1 IC メモリ ダイナミックRAM • シンクロナスDRAM:SDR(シングル・データ・レート),256Mビット(x4ビット構成) 容量 構成 品 名 (ビット) (ワード
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X13769XJ2V0CD00
DRAMSDR256M×
8K/64
54pin
A10BL
PC100
400mil)
PC133
A80L
PC100
4M84
2M164
upd432836
uPD432836AL
0443 IC
512k*8 sram 450 mil
uPD432836L
PC133-333
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HYS64V64220GBDL-7-D
Abstract: HYS64V64220GBDL-8-D
Text: 144 pin SO-DIMM SDRAM Modules HYS64V64220GBDL-7/7.5/8-D 512 MB PC100 / PC133 • u144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 64M x 64 non-parity module organisation • suitable for use in PC100 and PC133 applications
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HYS64V64220GBDL-7/7
PC100
PC133
PC133
PC100
HYS64V64220GBDL-7-D
HYS64V64220GBDL-8-D
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SO-DIMM 100-pin
Abstract: JESD65-A dimm 240 pin 100-pin dimm ELPIDA PC2700 PC25300 1gb pc133 SDRAM DIMM JESD65 Micron Designline Vol 8 sodimm ddr2 512mb 667mhz
Text: #78 DDR2: The Next Generation Main Memory By Jimmy Ma Introduction Today’s memory architecture shows significant improvements when compared to the days of Fast Page Mode FPM and Extended Data Out (EDO). The industry has shifted gear from an asynchronous
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PC100
PC133
66MHz
100MHz
133MHz
PC1318/04
PC2-3200/PC24300
PC2700
JESD65-B
SO-DIMM 100-pin
JESD65-A
dimm 240 pin
100-pin dimm
ELPIDA PC2700
PC25300
1gb pc133 SDRAM DIMM
JESD65
Micron Designline Vol 8
sodimm ddr2 512mb 667mhz
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