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    PCN13 Price and Stock

    Hirose Electric Co Ltd PCN13-96S-2.54DSA(71)

    CONN DIN RCPT 96POS PCB GOLD
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    DigiKey PCN13-96S-2.54DSA(71) Tray 297 1
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    CoreStaff Co Ltd PCN13-96S-2.54DSA(71) 360
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    PCN13-96S-2.54DSA(71) 7
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    Hirose Electric Co Ltd PCN13-44S-2.54DSA(71)

    CONN DIN RCPT 44POS PCB GOLD
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    DigiKey PCN13-44S-2.54DSA(71) Tray 265 1
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    Quest Components PCN13-44S-2.54DSA(71) 712
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    CoreStaff Co Ltd PCN13-44S-2.54DSA(71) 894
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    Hirose Electric Co Ltd PCN13-20S-2.54DSA(71)

    CONN DIN RCPT 20POS PCB GOLD
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    DigiKey PCN13-20S-2.54DSA(71) Tray 217 1
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    Mouser Electronics PCN13-20S-2.54DSA(71) 80
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    Hirose Electric Co Ltd PCN13-64S-2.54DSA(71)

    CONN DIN RCPT 64POS PCB GOLD
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    Mouser Electronics PCN13-64S-2.54DSA(71) 45
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    Hirose Electric Co Ltd PCN13-20S-2.54DS(71)

    CONN DIN RCPT 20POS PCB RA GOLD
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    Mouser Electronics PCN13-20S-2.54DS(71) 348
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    CoreStaff Co Ltd PCN13-20S-2.54DS(71) 17
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    PCN13 Datasheets (125)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PCN13-010S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-016S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-020S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-030S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-032S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-044S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-050S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-064S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-090S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-100S-2.54DS Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-100S-2.54DS Hirose Electric Backplane Connectors - DIN 41612, Connectors, Interconnects, DIN CONN RCPT 100POS 2 ROW RIANG Original PDF
    PCN13-100S-2.54DS(71) Hirose Electric Compliant to DIN standard, Compliant to IEC603-2/DIN41612 standard; HRS No: 583-3039-0 71; No. of Positions: 100; Connector Type: Board mounting; Contact Gender: Female; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 2; Operating Temperature Range (degrees C): -30 to 85; General Description: Socket; Right angle; Standard type; 2-row; Changed Finish Original PDF
    PCN13-100S-2.54DS(71) Hirose Electric Backplane Connectors - DIN 41612, Connectors, Interconnects, CONN DIN RCPT 100POS DUAL RT ANG Original PDF
    PCN13-100S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-100S-2.54DSA Hirose Electric Backplane Connectors - DIN 41612, Connectors, Interconnects, DIN CONN RCPT 100POS 2 ROW STR Original PDF
    PCN13-100S-2.54DSA(71) Hirose Electric Compliant to DIN standard, Compliant to IEC603-2/DIN41612 standard; HRS No: 583-3009-0 71; No. of Positions: 100; Connector Type: Board mounting; Contact Gender: Female; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; Stack Height (mm): 16.8; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -30 to 85; General Description: Socket; Straight; Standard type; 2-row; Changed Finish Original PDF
    PCN13-100S-2.54DSA(71) Hirose Electric Backplane Connectors - DIN 41612, Connectors, Interconnects, CONN DIN RCPT 100POS DUAL STR Original PDF
    PCN13-10S-2.54DS Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-10S-2.54DSA Hirose Electric Product Compliant to DIN41612/IEC603-2 Standard Original PDF
    PCN13-128S-2.54DSA(71) Hirose Electric Compliant to DIN standard, Compliant to IEC603-2/DIN41612 standard; HRS No: 583-3064-8 71; No. of Positions: 128; Connector Type: Board mounting; Contact Gender: Female; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; Stack Height (mm): 16.8; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -30 to 85; General Description: Socket; Straight; Standard type; 4-row; Changed Finish Original PDF
    ...

    PCN13 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK END OF LIFE WARNING Document ref: Issued: Authorised: PCN130604A v1.0 04 Jun 13 JPG Products affected 86SMX, GCX-39 Description


    Original     		PCN130604A 86SMX, GCX-39 PDF

    MRF6S21140HR3

    Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors PDF

    MB91F594

    Abstract: MB91F59BC
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS705-00010-3v0-E 32-bit Microcontroller FR Family FR81S MB91590 Series * *


    Original     		DS705-00010-3v0-E 32-bit FR81S MB91590 591BH/F591BHS/F592B/F592BS/F592BH/F592BHS MB91F594B/F594BS/F594BH/F594BHS/F596B /F596BS /F596BH /F596BHS* MB91F597B MB91F594 MB91F59BC PDF

    MB91570

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		DS705-00009-2v0-E MB91570 PDF

    MB91F5

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS705-00010-2v1-E 32-bit Microcontroller FR Family FR81S MB91590 Series * *


    Original     		DS705-00010-2v1-E 32-bit FR81S MB91590 591BH/F591BHS/F592B/F592BS/F592BH/F592BHS MB91F594B/F594BS/F594BH/F594BHS/F596B /F596BS /F596BH /F596BHS* MB91F597B MB91F5 PDF

    MB96F356

    Abstract: MB96350 dma 51FFH
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13806-3E 16-bit Proprietary Microcontroller CMOS F2MC-16FX MB96350 Series MB96F353/F355, MB96F356 • DESCRIPTION MB96350 series is based on Fujitsu’s advanced 16FX architecture 16-bit with instruction pipeline for RISClike performance . The CPU uses the same instruction set as the established 16LX series - thus allowing


    Original     		DS07-13806-3E 16-bit F2MC-16FX MB96350 MB96F353/F355, MB96F356 MB96F356 MB96350 dma 51FFH PDF

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    6 pin JTAG CONNECTOR

    Abstract: C8051F040 C8051040 H709 C8051F04x BOSCH jtag Silabs DB9 MALE TO DB9 male connector pinout db9 JTAG CONNECTOR SN65HVD
    Text: C8051F04x-DK C8051F04 X D E V E L O P M E N T K I T U S E R ’ S G U I D E 1. Kit Contents The C8051F04x Development Kit contains the following items: • • • • • • • • • Two C8051F040 Target Boards Serial Adapter RS232 to Target Board Debug Interface Protocol Converter


    Original     		C8051F04x-DK C8051F04 C8051F04x C8051F040 RS232 6 pin JTAG CONNECTOR C8051040 H709 BOSCH jtag Silabs DB9 MALE TO DB9 male connector pinout db9 JTAG CONNECTOR SN65HVD PDF

    K 1358 fet transistor

    Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17 PDF

    C8051F700

    Abstract: C8051F704
    Text: C8051F700-DK C8051F700 D E V E L O P M E N T K I T U SER ’ S G UIDE 1. Relevant Devices The C8051F700 Development Kit is intended as a development platform for the microcontrollers in the C8051F70x/71x MCU family. The members of this MCU family are: C8051F700, C8051F701, C8051F702,


    Original     		C8051F700-DK C8051F700 C8051F70x/71x C8051F700, C8051F701, C8051F702, C8051F703, C8051F704, C8051F705, C8051F704 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


    Original     		MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		MD7P19130H MD7P19130HR3 MD7P19130HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


    Original     		MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		MRF6P23190H MRF6P23190HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 5,12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110


    Original     		MRF6P21190HR6 PDF

    MRF6S19060N

    Abstract: No abstract text available
    Text: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF6S19060N IS--95 MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input


    Original     		MMG3014NT1 MMG3014NT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-


    Original     		MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 6, 10/2008 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		MRF281 MRF281SR1 MRF281ZR1 MRF281SR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 PDF

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14 PDF

    T491C105K0

    Abstract: No abstract text available
    Text: Document Number: MRF6P21190HR6 Rev. 5,12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF6P21190HR6 MRF6P21190HR6 T491C105K0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


    Original     		MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 28cers, PDF