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    Untitled

    Abstract: No abstract text available
    Text: PF3520 & PF3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE 1/2" PRESS-FIT DIODE Features  Diffused Junction  Low Leakage A  Low Cost Anode +  High Surge Current Capability  Typical IR less than 200nA 


    Original
    PF3520 PF3524 200nA DO-21, PF3520R PF3524R) PDF

    Untitled

    Abstract: No abstract text available
    Text: PF3520, PF3524, PF3536 35A AVALANCHE 1/2” PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA A Anode + Mechanical Data     


    Original
    PF3520, PF3524, PF3536 200nA DO-21, PF3520R PF3524R) PDF

    DO21

    Abstract: PF3524 PF3520
    Text: PF3520 & PF3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE 1/2" PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage A ! Low Cost Anode + ! High Surge Current Capability ! Typical IR less than 200nA 


    Original
    PF3520 PF3524 200nA DO-21, PF3520R PF3524R) DO-21 97inaccuracies. DO21 PF3524 PF3520 PDF