PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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TB230
Abstract: a/SMD resistor 805
Text: July 16, 2014 TB230 Frequency = 20-1000MHz Pout = 100W Gain = 15dB Typical Vds = 28Vdc Idq = 0.8A Efficiency = 30-50% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 16, 2014 PH:(805)484-4210 FAX:(805)484-3393
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TB230
20-1000MHz
28Vdc
LB2401
484-33R6
85mil
100nF
TB230
a/SMD resistor 805
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TB229
Abstract: amidon BN-61-202
Text: March 19, 2014 TB229 Frequency = 100-1000MHz Pout = 80W Gain = 14dB Vds = 28Vdc Idq = 0.8A Efficiency = 30 to 50% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 19, 2014 PH:(805)484-4210 FAX:(805)484-3393
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TB229
100-1000MHz
28Vdc
LB2401
UT-085
16AWG
FT-82-43
UT-070C-10
100nF
UT-034
TB229
amidon BN-61-202
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TB234
Abstract: 1111X104KW500
Text: May 27, 2014 TB234 Frequency = 500-1000MHz Pout = 100W Gain = 16dB Vds = 28Vdc Idq = 0.8A Efficiency = 40% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 27, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012
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TB234
500-1000MHz
28Vdc
LB2401
200pF
85mil
70mil
100nF
TB234
1111X104KW500
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QCA75AA120
Abstract: PT1200
Text: TRANSISTOR MODULE QCA75AA120 UL;E76102 （M） QCA75AA120 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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QCA75AA120
E76102
QCA75AA120
110TAB
37max.
30max.
MAX31
VCEX1200V
PT1200
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TB200
Abstract: amidon BN-61-202 c12 ph zener diode
Text: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200
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TB200
20-1000MHz
LB401
TB200
28Vdc,
20Mhz
200B104KW50X
100B100GW500X
amidon BN-61-202
c12 ph zener diode
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TB217
Abstract: PORCELAIN
Text: May 16, 2012 TB217#3 Frequency=30-512MHz Pout=10W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=30 to 55% LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 16, 2012 TB217#3 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=0.2A, Pout=10W
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TB217
30-512MHz
28Vdc
LP801
28Vdc,
30MHz
RHM10kECT-ND
PORCELAIN
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QCA75AA100
Abstract: VCEX1000V
Text: TRANSISTOR MODULE QCA75AA100 UL;E76102 （M） QCA75AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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QCA75AA100
E76102
QCA75AA100
100msec50sec
1ms100ms
VCEX1000V
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QCA100BA60
Abstract: No abstract text available
Text: TRANSISTOR MODULE（Hi-β） QCA100BA60 UL;E76102 （M） QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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QCA100BA60
E76102
QCA100BA60
trr200ns)
95max
110Tab
50msec50sec
100sec50msec
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BAV70W
Abstract: Signal
Text: BAV70W BAV70W Surface Mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2009-09-28 2 ±0.1 0.3 Power dissipation Verlustleistung 1±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung 1 2.1 1.25±0.1
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BAV70W
OT-323
BAV70W
Signal
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SAT INDUCTOR
Abstract: DO1608C-154 MBR0530 MBR0530T1 MIC2571 MIC2571-1BMM MIC2571-2BMM Motorola BOOST smps 594D156X0025C2T
Text: MIC2571 Micrel MIC2571 Single-Cell Switching Regulator Preliminary Information General Description Features Micrel’s MIC2571 is a micropower boost switching regulator that operates from one alkaline, nickel-metal-hydride cell, or lithium cell. The MIC2571 accepts a positive input voltage between 0.9V
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MIC2571
MIC2571
MIC2571-1)
MIC2571-2)
fi000
60005Sanford,
SAT INDUCTOR
DO1608C-154
MBR0530
MBR0530T1
MIC2571-1BMM
MIC2571-2BMM
Motorola BOOST smps
594D156X0025C2T
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167D
Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100
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TB167D
30-512MHz
28Vdc
LQ801
LB501A
28Vdc,
0R0J12AFX
167D
ph c24 zener diode
amidon BN-61-202
ph c20 zener diode
ph c13 zener diode
ph c24 zener
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594D156X0025C2T
Abstract: DO1608C-154 MBR0530 MBR0530T1 MIC2571 MIC2571-1BMM MIC2571-2BMM 594D476X0016C2T
Text: MIC2571 Micrel MIC2571 Single-Cell Switching Regulator Final Information General Description Features Micrel’s MIC2571 is a micropower boost switching regulator that operates from one alkaline, nickel-metal-hydride cell, or lithium cell. The MIC2571 accepts a positive input voltage between 0.9V
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MIC2571
MIC2571
MIC2571-1)
MIC2571-2)
ou043
594D156X0025C2T
DO1608C-154
MBR0530
MBR0530T1
MIC2571-1BMM
MIC2571-2BMM
594D476X0016C2T
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fx516
Abstract: DO1608C-154 MBR0530 MBR0530T1 MIC2571 MIC2571-1BMM MIC2571-2BMM Motorola BOOST smps 594D156X0025C2T
Text: MIC2571 Micrel MIC2571 Single-Cell Switching Regulator Final Information General Description Features Micrel’s MIC2571 is a micropower boost switching regulator that operates from one alkaline, nickel-metal-hydride cell, or lithium cell. The MIC2571 accepts a positive input voltage between 0.9V
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MIC2571
MIC2571
MIC2571-1)
MIC2571-2)
ou043
fx516
DO1608C-154
MBR0530
MBR0530T1
MIC2571-1BMM
MIC2571-2BMM
Motorola BOOST smps
594D156X0025C2T
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Nichicon VX
Abstract: VX SERIES NICHICON NICHICON VX SERIES Q1/TPSE106M Nichicon LM series NICHICON VX SERIES CAPACITOR
Text: MIC4575 200kHz Simple 1A Buck Voltage Regulator General Description Features The MIC4575 is a series of easy to use fixed and adjustable BiCMOS step-down buck switch-mode voltage regulators. The 200kHz MIC4575 duplicates the pinout and function of the 52kHz LM2575. The higher switching frequency may
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MIC4575
200kHz
MIC4575
52kHz
LM2575.
226X0010C
MBRS130LT3
Nichicon VX
VX SERIES NICHICON
NICHICON VX SERIES
Q1/TPSE106M
Nichicon LM series
NICHICON VX SERIES CAPACITOR
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FAH diode
Abstract: K375 DIODE FAH 45
Text: OM6OL6OPB OM50F60PB Prelim inary Data Sheet OM45L120PB OM35F120PB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES H ig h C u r r e n t . Hi gh V ol ta g e 6 0 0 V A n d 1200V. Up To 75 A m p Dual I G B T s W it h F R E D D i o d e s FEATURES • Includes Internal FRED Diode
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OM50F60PB
OM45L120PB
OM35F120PB
MIL-S-19500,
35F120HB
FAH diode
K375
DIODE FAH 45
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10 AMP 1200V RECTIFIER DIODE
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V FTC 960 OM35F120HB OM45L120HB OM50F60HB OM60L60HB k375 fast recovery Diode 1200V 200A
Text: OM6OL6OHB OM45L120HB Preliminary Data Sheet OM50F60HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp IGBTs With FRED Diodes, Half-Bridge Configuration FEATURES • • • •
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OM45L120HB
OM50F60HB
OM35F12QHB
MIL-S-19500,
00010b?
10 AMP 1200V RECTIFIER DIODE
Fast Recovery Bridge Rectifier, 60A, 600V
FTC 960
OM35F120HB
OM60L60HB
k375
fast recovery Diode 1200V 200A
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Untitled
Abstract: No abstract text available
Text: OM6OL6OPB OM50F60PB Prelim inary Data Sheet OM45LI20PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 60 0V And 1200V, Up To 75 A m p Dual IGBTs With F R E D Diodes FEATURES • • • • • • • Includes Internal FRED Diode
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OM50F60PB
OM45LI20PB
OM35F12QPB
MIL-S-19500,
relia0F60PB
35F120PB
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet OM6OL6OHB OM45L120HB OM50F60HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLO CK PACKAGES High Current, High Voltage 600V And 1200V. Up To 75 A m p IGBTs With FRED Diodes. Half-Bridge C onfiguration FEATURES • • •
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OM45L120HB
OM50F60HB
OM35F12QHB
MIL-S-19500,
03oJL
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Nichicon hm
Abstract: No abstract text available
Text: MIC4576 200kHz Simple 3A Buck Voltage Regulator General Description Features The MIC4576 is a series of easy to use fixed and adjustable BiCMOS step-down buck switch-mode voltage regulators. The 200kHz MIC4576 duplicates the pinout and function of the 52kHz LM2576. The higher switching frequency may
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MIC4576
200kHz
MIC4576
52kHz
LM2576.
UPL1J471
PL1C102M
Nichicon hm
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Untitled
Abstract: No abstract text available
Text: g•' *raH*lPROCe*SNQE»»±£NCS J Electroluminescent Lamp Driver Low Voltage Applications ■ Low Voltage, Single Battery Operation vbat >1.1 Vdc ■ DC to AC Inverter for EL Backlit Display Panels ■ Externally Adjustable Internal Oscillator ■ Low Current Standby Mode
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SP4425
SP4425DS/02
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Untitled
Abstract: No abstract text available
Text: OM6OL6OHB OM50F60HB Preliminary Data Sheet OM45L120HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High C urrent, High Voltage 600V A nd 1200V, Up To 75 A m p IGBTs W ith FRED Diodes, H a lf-B ridg e C o n fig u ra tio n FEATURES
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OM50F60HB
OM45L120HB
OM35F12QHB
MIL-S-19500,
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Untitled
Abstract: No abstract text available
Text: OM6OL6OHB QM50F60HB Prelim inary Data Sheet OM45LI20HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 A m p IG BT s With F R E D Diodes. Half -Br id ge Con fig ura tio n FEATURES •
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QM50F60HB
OM45LI20HB
OM35F12QHB
MIL-S-19500,
L120HB
50F60HB
35F120HB
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Untitled
Abstract: No abstract text available
Text: OM6OL6OPB OM50F60PB Preliminary Data Sheet OM45L120PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Cu rre nt, High Voltage 600V A n d 1200V, Up To 75 A m p Dual IGBTs With FRED Dio des FEATURES • • • • • • • Includes Internal FRED Diode
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OM50F60PB
OM45L120PB
OM35F12QPB
MIL-S-19500,
60L60PB
45L120PB
50F60PB
35F120PB
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