IRFP150N equivalent
Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Text: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N
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IRFR9N20D
IRFS17N20D
IRFS23N15D
IRFS23N20D
IRFS31N20D
IRFS33N15D
IRFS59N10D
IRFZ24N
IRFZ24S
IRL1104S
IRFP150N equivalent
IRF3710 equivalent
irf540 equivalent
equivalent of irf640n
irfp250n equivalent
equivalent irf640n
IRFP260N
IRFP260n equivalent
IRF3415 equivalent
IRF540
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PXAC37KFA
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS XA-C3 XA 16-bit microcontroller family 32K/1024 OTP/ROM CAN transport layer controller 1 UART, 1 SPI Port, CAN 2.0B, 32 CAN ID Filters, transport layer co-processor Preliminary specification Philips Semiconductors 1999 Dec 20 Philips Semiconductors
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16-bit
32K/1024
PXAC37KFA
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PHW35NQ20T
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHW35NQ20T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 35 A
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PHW35NQ20T
OT429
PHW35NQ20T
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capacitor 27pf
Abstract: Capacitor RUBYCON CAPACITOR RUBYCON CAPACITOR 120 GRM188R71H102K capacitor 22 pf GRM188R71H104KA GRM188R71H103KA capacitor 56 pF Coilcraft
Text: DB-55015-165 BOM Component ID Description B1, B2 Ferrite Bead Value D1 Zener Diode 5.1 V L1 Inductor 35.5 nH L2 Inductor L3 Inductor L4 Case size Manufacturer Part Code PANASONIC EXCELDRC35C SOD110 PHILIPS BZX284C5V1 Mini COILCRAFT B09T 17.5 nH Mini COILCRAFT
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DB-55015-165
EXCELDRC35C
OD110
BZX284C5V1
GRM42-6C0G121_
GRM188R71H102K_
PD55015
214W-1-103E
capacitor 27pf
Capacitor
RUBYCON CAPACITOR
RUBYCON CAPACITOR 120
GRM188R71H102K
capacitor 22 pf
GRM188R71H104KA
GRM188R71H103KA
capacitor 56 pF
Coilcraft
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IRF540
Abstract: IRF540 smd IRF540 application note Application Note of IRF540 irf540 "27 MHz" irf540 27 MHz IRF540 application IRF540S Applications Note of IRF540 transistor irf540
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF540, IRF540S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 23 A
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IRF540,
IRF540S
IRF540
O220AB)
IRF540S
OT404
IRF540 smd
IRF540 application note
Application Note of IRF540
irf540 "27 MHz"
irf540 27 MHz
IRF540 application
Applications Note of IRF540
transistor irf540
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Untitled
Abstract: No abstract text available
Text: GM m 3 r z iD c n EE M l SCC2698B Enhanced octal universal asynchronous receiver/transmitter Octal UART Product specification Supersedes data of 1995 May 01 IC19 Data Handbook Philips Semiconductors 1998 Sep 04 1 PHILIPS Philips Semiconductors Product specification
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SCC2698B
SCC2698B
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BYD34D
Abstract: BYD34J BYD34G BYD34K BYD34M
Text: N AMER PHILIPS/DISCRETE h'lE D • Philips Semiconductors_ bh53^31 □0SbS7c1 410 ■ APX Maintenance type ~ not for new designs Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID
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BYD34
ttS3T31
00Eb5Ã
BYD34D
BYD34J
BYD34G
BYD34K
BYD34M
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Untitled
Abstract: No abstract text available
Text: N A PIER PHILIPS/DISCRETE b^E bbS3^31 Q05bS7T 41Q H A P X D Maintenance type - not tor new designs Philips Semiconductors_ Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID
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Q05bS7T
BYD34
bbS3T31
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BZD23
Abstract: c6v8 C510 bje 66 C82 diode BZD23-C3V6 BZD23-C7V5 C100 C110 C120
Text: N AUER PHILIPS/DISCRETE b=iE D ^ 5 3 ^ 3 1 DDEb?ll 517 Philips Semiconductors_ r IVM uwt Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for
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bb53131
BZD23
BZD23-C3V6
BZD23-C7V5
C7V5-C510
bb53T31
D02ti713
MGA020
c6v8
C510
bje 66
C82 diode
C100
C110
C120
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MGA018
Abstract: 305 5VL c7v5 C510 C82 diode c82 004 mga01 Philips MBB working of voltage regulator BZD23-C3V6
Text: N AMER PHILIPS/DISCRETE t'JE J> bb53T31 002b711 51? * A P X m Philips Sem iconductors Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for use as voltage regulator and
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BZD23
BZD23-C3V6
C7V5-C510
BZD23-C7V5
MQA020
MGA018
305 5VL
c7v5
C510
C82 diode
c82 004
mga01
Philips MBB
working of voltage regulator
BZD23-C3V6
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC05 Philips Semiconductors 1998 Apr 09 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification Trip le v i d e o d r i v e r h y b r id a m p l i f i e r
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CR6929A
OT451
125102/00/02/pp8
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5785B
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S Preliminary specification Supersedes data of 1998 Mar 05 File under Discrete Semiconductors, SC05 Philips Semiconductors 1998 Apr 07 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification Trip le v i d e o d r i v e r h y b r id a m p l i f i e r
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CR6729A
125102/00/02/pp8
5785B
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lg philips crt tube
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S P relim inary specification File under D iscrete S em iconductors, SC05 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification Trip le v i d e o d r i v e r h y b r id a m p l i f i e r
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CR6929A
OT451
lg philips crt tube
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251H
Abstract: lg philips crt tube
Text: DISC RETE S E M IC O N D U C TO R S Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC05 Philips Semiconductors 1998 Apr 09 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification Trip le v i d e o d r i v e r h y b r id a m p l i f i e r
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CR6929
OT451
125102/00/02/pp8
251H
lg philips crt tube
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tl2417
Abstract: 8851 motorola flex protocol CV17 LQFP32 PCD5008 PCD5008H motorola flex pager 11
Text: Philips Semiconductors Product specification FLEX Pager Decoder CONTENTS PCD5008 8.6.7 8.8.3 8.8.4 8.8.5 8 .8.6 8.8.7 Configuration of assigned frames and pager collapse ID = 20H to 27H Configuration of assigned phase Call data packets General Address packet (ID = 01H)
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buk7530-55
Abstract: mosfet-n SOT166 TOPFET buk7530
Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263
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56-800A
BUK446-800A
BUK456-800B
BUK446-800B
BUK454-800A
BUK444-800A
BUK454-800B
BUK444-800B
BUK456-1000B
BUK446-1000B
buk7530-55
mosfet-n
SOT166
TOPFET
buk7530
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b lE D ^ 5 3 1 3 1 D0307,:iD 3Tfi « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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D0307,
T0220AB
BUK553-60A/B
BUK553
777ali
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BUK417-500B
Abstract: TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide
Text: Philips Semiconductors PowerMOS Transistors including TO P FETs and IGBTs V DS V @ ID (A) Rdsjon) (ß) Id w Selection Guide Pd (W) TYPE NUMBER TECH NO LO GY ENVELOPE SOT263 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50S TOPFET SOT263
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T0220AB
OT186
OT186
BUK856-400IZ
BUK417-500B
TOPFETs FETs
T0-220AB
mosfet
BUK454-600
BUK617-500BE
BUK551-100A
PHILIPS MOSFET igbt
Philips Semiconductors Selection Guide
Igbts guide
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BYD74E
Abstract: BYD74A BDY74A BYD74
Text: N AMER PHILIPS/DISCRETE b*ìE J> m bbSB'iai DDEbbEO b4T • APX _ 1 BYD74 SERIES EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They feature low
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1BYD74
BDY74A
BYD74
bbS3T31
002bbS7
BYD74E
BYD74A
BDY74A
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Untitled
Abstract: No abstract text available
Text: 41E D PHILIPS INTERNATIONAL 711002b 0030460 S « P H I N T—4 1 -8 5 Philips Semiconductors Product specification W id e body, high iso lation /h igh -gain o p to co u p iers C N W 138/C N W 1 39 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm
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711002b
138/C
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c82 004
Abstract: C4V7 517
Text: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass
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BZD23
BZD23-C3V6
BZD23-C7V5
C7V5-C510
bb53R31
2b71R
S0D81.
c82 004
C4V7 517
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1000 v fast recovery rectifier diodes
Abstract: M057 BYD34D BYD34G BYD34J BYD34K BYD34M Philips FA 564
Text: 5bE D m 711002b □DM0575 T22 H P H I N Maintenance type - not for new designs pnmps Avalanche fast soft-recovery rectifier diodes PHILIPS INTERNATIONAL DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID
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M0575
BYD34
1000 v fast recovery rectifier diodes
M057
BYD34D
BYD34G
BYD34J
BYD34K
BYD34M
Philips FA 564
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crystal s783
Abstract: GK266 GK266 V3
Text: Product specification Philips Semiconductors FLEX Pager Decoder PCD5008 8.7.7 8.7.8 8.7.9 8.8 8.8.1 8.8.2 8.8.3 8.8.4 8.8.5 8.8.6 8.8.7 Configuration of assigned frames and pager collapse ID = 20H to 27H Configuration of assigned phase Call data packets
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T0220AB SYMBOL Id p« T, R d S ON PARAMETER MAX. MAX. BUK452 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state
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BUK452-100A/B
BUK452
-100A
-100B
T0220AB
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