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    e2 400

    Abstract: No abstract text available
    Text: ISSI PACKAGING INFORMATION 400-mil Plastic SOJ Package Code: K N E1 1 E SEATING PLANE D b A C A2 e Symbol Ref. Std. No. Leads A A1 A2 B b C D E E1 E2 e S B E2 400-mil Plastic SOIC J-bend (K) Inches Min Max Min Max 32 0.131 0.145 0.025 — 0.082 — 0.013


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    400-mil PK13197K e2 400 PDF

    0395

    Abstract: No abstract text available
    Text: ISSI PACKAGING INFORMATION 400-mil Plastic SOJ Package Code: K N E1 1 E SEATING PLANE D b A C A2 e Ref. Std. No. Leads Symbol A A1 A2 B b C D E E1 E2 e 32 Min Max 0.128 0.148 0.025 — 0.082 — 0.015 0.020 0.026 0.032 0.007 0.013 0.820 0.830 0.435 0.445 0.395


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    400-mil MS-027 PK13197K 0395 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI PACKAGING INFORMATION 400-mil Plastic SOJ Package Code: K N E1 E 1 SEATING PLANE D b A C A2 e Symbol Ref. Std. N A A1 A2 B b C D E E1 E2 e B Rev. C 03/17/98 E2 400-mil Plastic SOJ K Inches Inches Min Max Min Max 40 0.128 0.148 0.025 — 0.082 — 0.015


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    400-mil PK13197K40 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI' IS 4 1 L V 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE ADVANCE INFORMATION SEPTEMBER 1998 DESCRIPTION FEATURES Extended Data-Out (EDO) Page Mode access cycle LVTTL compatible inputs and outputs Single +3.3V ± 10% power supply 5V I/O tolerant


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    40-pin 16-bit IS41LV16256 within27 PK13197T2 0044Q4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 64K x 16 HIGH-SPEED ULTRA-LOW POWER CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES ADVAN^ LF1°9^ ATI0N DESCRIPTION • H igh-speed access tim e: 15, 20, 35, and 45 ns • CM O S low pow er operation — 40 mW typical operating — 90 \i\N (typical) standby • T T L com patible interface levels


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    44-pin IS62LV6416LL 576-bit PK13197K 10Q4404 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV3216 32K x 16 LO W V O L T A G E C M O S S T A T IC FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 150 mW typical operating — 150 fiW (typical) standby • TTL compatible interface levels • Single 3.3V ± 10% power supply


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    IS61LV3216 44-pin 400-mil IS61LV3216 PK13197K40 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS6 1 C12816 128K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation The IS S IIS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated


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    C12816 IIS61C12816 152-bit PK13197K PDF

    Untitled

    Abstract: No abstract text available
    Text: I S 6 1 L V 1 2 8 I S 6 1 L V 1 2 8 1 1 ISSI 6 L 6 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY ADVANCE INFORMATION AUGUST 1998 FEATURES DESCRIPTION • High-speed access time: 10, 12, and 15 ns The IS S IIS61LV12816 is a high-speed, 2,097,152-bit static


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    IIS61LV12816 152-bit PK13197T2 PDF