Untitled
Abstract: No abstract text available
Text: AOK10B60D 600V, 10A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK10B60D
O-247
1E-06
1E-05
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E OFF
Abstract: 100°C AOB5B60D
Text: AOB5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOB5B60D
O-263
1E-06
1E-05
E OFF
100°C
AOB5B60D
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RG305
Abstract: diode 10a 400v
Text: AOT10B60D 600V, 10A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOT10B60D
O-220
AOT10B60D
1E-06
1E-05
RG305
diode 10a 400v
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Package
Abstract: AOTF15B60D
Text: AOTF15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOTF15B60D
O-220F
1E-06
1E-05
Package
AOTF15B60D
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Package
Abstract: E OFF 100°C AOTF5B60D
Text: AOTF5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOTF5B60D
O-220F
1E-06
1E-05
Package
E OFF
100°C
AOTF5B60D
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Package
Abstract: E OFF 100°C AOT5B60D
Text: AOT5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOT5B60D
O-220
1E-06
1E-05
Package
E OFF
100°C
AOT5B60D
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AOD5B60
Abstract: No abstract text available
Text: AOD5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOD5B60D
AOD5B60D
1E-06
1E-05
AOD5B60
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k10t60
Abstract: Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681
Text: IKP10N60T IKB10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP10N60T
IKB10N60T
P-TO-220-3-1
O-220AB)
Oct-04
k10t60
Q67040S4681
Q67040S4682
30A20V
fast recovery diode 1000v 10A
IKP10N60T K10T60
IKB10N60T
IKP10N60T
SWITCHING DIODE 600V 2A
Q67040-S4681
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Untitled
Abstract: No abstract text available
Text: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK20B60D1
O-247
1E-06
1E-05
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AOK30B60D1
Abstract: No abstract text available
Text: AOK30B60D1 600V, 30A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK30B60D1
O-247
1E-06
1E-05
AOK30B60D1
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k06t60
Abstract: igbt k06t60 IKA06N60T PG-TO220-3-31 Wr1c
Text: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop ® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs
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IKA06N60T
PG-TO-220-3-31
k06t60
igbt k06t60
IKA06N60T
PG-TO220-3-31
Wr1c
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k06t60
Abstract: fast recovery diode 1000v 10A diode 400V 6A diode 6a 400v IKP06N60T 6A, 100v fast recovery diode datasheet ic 7822 FAST RECOVERY DIODE 200ns PG-TO-220-3-1
Text: IKP06N60T p TrenchStop series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs
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IKP06N60T
PG-TO-220-3-1
k06t60
fast recovery diode 1000v 10A
diode 400V 6A
diode 6a 400v
IKP06N60T
6A, 100v fast recovery diode
datasheet ic 7822
FAST RECOVERY DIODE 200ns
PG-TO-220-3-1
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APT30GP60JDQ1
Abstract: No abstract text available
Text: APT30GP60JDQ1 600V TYPICAL PERFORMANCE CURVES APT30GP60JDQ1 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT30GP60JDQ1
E145592
APT30GP60JDQ1
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APT30GP60BDQ1G
Abstract: No abstract text available
Text: APT30GP60BDQ1 G 600V TYPICAL PERFORMANCE CURVES APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT30GP60BDQ1
APT30GP60BDQ1G*
APT30GP60BDQ1G
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Untitled
Abstract: No abstract text available
Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60BDF1
O-247
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APT30GP60BDF1
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT30GP60BDF1 APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60BDF1
O-247
APT30GP60BDF1
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Untitled
Abstract: No abstract text available
Text: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60JDF1
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30GP60BDF1
Abstract: No abstract text available
Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60BDF1
O-247
T0-247
30GP60BDF1
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ic 7493
Abstract: data sheet IC 7493 7493 IC IC 7493 data sheet Datasheet of 7493 IC APT40GP60B2DQ2G definition of 7493 ic 7493 7493 APPLICATION 7493 integrated circuit
Text: APT40GP60B2DQ2 G 600V TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2 APT40GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT40GP60B2DQ2
APT40GP60B2DQ2
APT40GP60B2DQ2G*
ic 7493
data sheet IC 7493
7493 IC
IC 7493 data sheet
Datasheet of 7493 IC
APT40GP60B2DQ2G
definition of 7493 ic
7493
7493 APPLICATION
7493 integrated circuit
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APT30GT60BRDL
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT30GT60BRDL G 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers
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APT30GT60BRDL
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7441
Abstract: IC 7441 datasheet APT65GP60JDF2
Text: TYPICAL PERFORMANCE CURVES APT65GP60JDF2 APT65GP60JDF2 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT65GP60JDF2
7441
IC 7441 datasheet
APT65GP60JDF2
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DIAC DB3 EQUIVALENT
Abstract: STP16N25 Triac 600v 1a to92 equivalent for DIAC DB3 DB3 Diac EQUIVALENT po130aa 1A 400v scr to220 L6561 200w STD3N50-1 diac 240V
Text: LIGHTING RECOMMENDED DEVICES POWER FACTOR CORRECTION PFC COMPACT FLUORESCENT LAMP (CFL) Mains 5W 10W 20W > 20W BULT118 BULT118 BULT118 BUL381/2 BULK128/D▲ BULK128/Ds BUL381D/2D BUL128/D▲ BUL128/Ds BUL138 110V Mains 120V Package* 9-40W L6560/A L6561 PFC - Controller
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BULT118
BUL381/2
BULK128/Dv
BULK128/Ds
BUL128/Ds
BUL138
BUL381D/2D
BUL128/Dv
DIAC DB3 EQUIVALENT
STP16N25
Triac 600v 1a to92
equivalent for DIAC DB3
DB3 Diac EQUIVALENT
po130aa
1A 400v scr to220
L6561 200w
STD3N50-1
diac 240V
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKA15N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C
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IKA15N60T
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100L2CZ
Abstract: 10GL2CZ 100L2C 10FL2CZ 10dl2cz
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 10(D,F,G)L2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERTER & CHOPPER APPLICATION. 10.3 MAX 03.2±O .2 • Repetitive Peak Reverse Voltage : V^^=200, 300, 400V • Average Output Recified Current : Io=10A
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L2CZ47A
100L2CZ47A
10FL2CZ47A
10GL2CZ47A
100L2CZ
10GL2CZ
100L2C
10FL2CZ
10dl2cz
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