13003D
Abstract: No abstract text available
Text: DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 450V • • • BVCES > 700V BVEBO > 9V • • IC = 1.5A high Continuous Collector Current • • Integrated Collector-Emitter Diode to act as free-wheeling diode
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DXT13003DG
OT223
J-STD-020
MIL-STD-202,
DS37262
13003D
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BAT70
Abstract: BAT70-05
Text: BAT70. Silicon Schottky Diode Power rectifier diode Parallel connection for maximum I F per package Low forward voltage drop For power supply For clamping and protection BAT70-05 4 D 1 1 2 D 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT70.
BAT70-05
OT223
50/60Hz,
Nov-07-2002
100ms
BAT70
BAT70-05
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PDF
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6n303
Abstract: fdfs6n303 fdfs SOIC-16
Text: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.
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FDFS6N303
6n303
fdfs6n303
fdfs
SOIC-16
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BAT66
Abstract: BAT66-05
Text: BAT66. Silicon Schottky Diode Power rectifier diode For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 4 D 1 1 D 2 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BAT66.
BAT66-05
OT223
50/60Hz,
Feb-14-2003
EHB00063
EHB00062
BAT66
BAT66-05
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES
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5302D
5302D
5302DL-AA3-R
5302DG-AA3-R
5302DL-T60-K
5302DG-T60-K
5302DL-T92-B
5302DG-T92-B
5302DL-T92-K
5302DG-T92-K
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Q62702-A988
Abstract: A988 DIODE BAT Code 035 on semiconductor JS marking diode
Text: Silicon Schottky Diode BAT 66-05 Preliminary Data Low-power Schottky rectifier diode ● For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes ● Type Marking Ordering Code tape and reel BAT 66-05 BAT 66-05 Q62702-A988
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Original
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Q62702-A988
OT-223
Q62702-A988
A988
DIODE BAT
Code 035 on semiconductor
JS marking diode
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PDF
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VPS05163
Abstract: bat66 BAT66-05
Text: BAT66-05 Silicon Schottky Diode Low-power Schottky rectifier diode For low-loss, fast-recovery rectification, 4 meter protection, bias isolation and clamping purpose 3 2 1 VPS05163 2, 4 1 3 EHA00005 Type Marking BAT66-05 BAT 66-05 Pin Configuration 1 = A1
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Original
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BAT66-05
VPS05163
EHA00005
OT223
50/60Hz,
EHB00062
EHB00063
Jul-27-2001
VPS05163
bat66
BAT66-05
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PDF
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VPS05163
Abstract: Schottky Diode SOT-223 6605
Text: BAT 66-05 Silicon Schottky Diode • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, 4 meter protection, bias isolation and clamping purpose 3 2 1 VPS05163 2, 4 1 3 EHA00005 Type Marking BAT 66-05 BAT 66-05 Pin Configuration
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Original
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VPS05163
EHA00005
OT-223
50/60Hz,
EHB00062
EHB00063
Oct-07-1999
EHB00155
VPS05163
Schottky Diode SOT-223
6605
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode DAP222 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board
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Original
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416/SC
DAP222
A218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
BC237
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PDF
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N20E
Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast
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Original
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MTD6N20E
MTD6N20E/D
N20E
on semiconductor marking n20e
369D
AN569
MTD6N20E
MTD6N20E1
MTD6N20ET4
6n20e
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PDF
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12v and 5v regulated power supply circuit diagram
Abstract: VJ0805Y104JXA schematic power supply circuit diagram using ic POWER MOSFET CIRCUIT LMV321M5 1N5819M 929834-02-36-ND 20a power supply AN820 LMV321
Text: SiDB766761 Vishay Siliconix Temperature Sensing MOSFET Evaluation Board FEATURES Turns Off MOSFET Before TJ Exceeds 175_C Rating 5-V Logic Level Operation of Control Circuit 12-V Battery Level Operation of Power MOSFET Circuit Sense Diode Bias Current, IF = 250 mA
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Original
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SiDB766761
SUB60N04-15LT,
SUB60N04-15LT
LM2937IMP-5
OT-223
LMV321M5,
SC70-5
929834-02-36-ND
12v and 5v regulated power supply circuit diagram
VJ0805Y104JXA
schematic power supply circuit diagram using ic
POWER MOSFET CIRCUIT
LMV321M5
1N5819M
929834-02-36-ND
20a power supply
AN820
LMV321
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PDF
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bergquist ge
Abstract: MV7005T1 MV7005T3
Text: Order this data sheet by MV7005T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA E This silicon epicap diode is designed for use in high capacitance, high-tuning ratio applications. The device is housed in the SOT-223 package which is desianed for medium power surface mount applications.
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MV7005T1/D
OT-223
MKI45BP,
MV7005T1
MV7005T3
bergquist ge
MV7005T3
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PDF
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25P03L
Abstract: AN569 NTD25P03L NTD25P03L1 NTD25P03LT4
Text: NTD25P03LT4 Advance Information Power MOSFET 25 Amps, 30 Volts, Logic Level P-Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete fast
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Original
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NTD25P03LT4
r14525
NTD25P03LT4/D
25P03L
AN569
NTD25P03L
NTD25P03L1
NTD25P03LT4
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PDF
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VPS05163
Abstract: BAT70-05
Text: BAT70-05 Silicon Schottky Diode 4 Parallel connection for maximum I F per package 3 Low forward voltage drop 2 For power supply 1 For clamping and protection VPS05163 2, 4 1 3 EHA00005 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BAT70-05
VPS05163
EHA00005
OT223
50/60Hz,
Jun-22-2001
100ms,
VPS05163
BAT70-05
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PDF
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M 4 3171 opto
Abstract: 9571 gh opto 3171 MBR6545 3171 opto SOT223 6 pin
Text: MOTOROLA MBR6535 MBR6545 SEMICONDUCTOR TECHNICAL DATA MBR6545 is a Motorola Preferred Device Switchmode Power Rectifiers . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.
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OCR Scan
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MBR6535
MBR6545
MBR6545
DO-35
M 4 3171 opto
9571 gh
opto 3171
3171 opto
SOT223 6 pin
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PDF
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SOT23 6pin MARKING 3F
Abstract: marking 3f 6pin MBR7535 MBR7545
Text: MBR7535 MBR7545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R 75 45 is a M o to rola P referre d D e v ice Switchmode Power Rectifiers S C H O T T K Y B A R R IE R R EC TIFIER S . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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OCR Scan
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MBR7535
MBR7545
DO-35
SOT23 6pin MARKING 3F
marking 3f 6pin
MBR7545
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PDF
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V7005
Abstract: MV7005T1 package marking sot 223 MV7005T3 diode MARKING c9
Text: This silicon epicap diode is designed for use in high capacitance, hightuning ratio applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • Guaranteed Capacitance Range • SOT-223 Package can be Soldered Using W ave or Reflow.
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OCR Scan
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OT-223
MV7005T1
inch/1000
MV7005T3
inch/4000
MV7005T1*
318E-04,
O-261AA
V7005
package marking sot 223
diode MARKING c9
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E fc.^E bb53R31 ]> 0027077 Philips Semiconductors T20 «A PX Product specification Schottky barrier diodes PBYR2100CT series QUICK REFERENCE DATA FEATURES • Double diode in SMD power package • Low turn-on and high breakdown
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OCR Scan
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bb53R31
PBYR2100CT
PBYR280CT
PBYR290CT
PBYR21OOCT
PBYR2100CT
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PDF
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BYR210
Abstract: BYR28 BYR29 PBYR2100CT PBYR280CT PBYR290CT
Text: N AUER P H I L I P S / D I S C R E T E tiTE » bbS3T31 0027G77 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Double diode in SMD power package • Low turn-on and high breakdown voltage I APX TED PBYR2100CT series QUICK REFERENCE DATA
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OCR Scan
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bbS3T31
0027G77
PBYR2100CT
OT223
PINNING-SOT223
PBYR280CT
BYR210
BYR28
BYR29
PBYR290CT
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PDF
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PBYR2150CT
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Schottky barrier double diode PBYR2150CT FEATURES DESCRIPTION • Low switching losses The PBYR2150CT is a Schottky barrier double diode, fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package.
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OCR Scan
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PBYR2150CT
PBYR2150CT
OT223
MAM086
byr215.
OT223)
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PDF
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DIODE S3H
Abstract: km 1667 smd diode os A2 diode smd ultra fast recovery time diode A1 SMD DIODE d 1667 dual reverse diode smd NE ultra low drop forward voltage diode
Text: Philips Semiconductors 711Dfl2fci 0 D b ci b 7 4 T il BPHIN Dual rectifiers - SMD version Ultra fast recovery Product specification BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency monolithic dual rectifiers in SOT223
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OCR Scan
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711DaEb
BYV40
OT223
DIODE S3H
km 1667
smd diode os
A2 diode smd
ultra fast recovery time diode
A1 SMD DIODE
d 1667
dual reverse diode
smd NE
ultra low drop forward voltage diode
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PDF
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d3s 05 diode
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 002570A D3S * A P X Dual rectifiers - SMD version Ultra fast recovery N AHER PHILIPS/DISCRETE GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency monolithic dual rectifiers in SOT223 plastic envelope suitable for surface mounting,
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OCR Scan
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bbS3T31
02570A
BYV40
OT223
BYV40
Q025712
0D35713
d3s 05 diode
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PDF
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LTSG
Abstract: No abstract text available
Text: SUPPLY VOLTAGE MONITOR ZSM561 ISSUE 2 - NOVEMBER 1995_ DEVICE DESCRIPTION The device is available in a T092 package for through hole applications as well as S 0 8 and SOT223 for surface mount requirements. The ZSM561 is a three terminal under voltage
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OCR Scan
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ZSM561
OT223
ZSM561
ZTX690B
LTSG
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PDF
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TM1102
Abstract: S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF
Text: Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 FEATURES DESCRIPTION • Low output capacitance Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. • Fast switching time
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OCR Scan
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PZTM1102
OT223
PZTM1101.
711QfiSb
G1G3173
OT223.
7110fiEb
TM1102
S1U MARKING
TF 745-A
SOT223 MARKING L5
l5 transistor PNP
transistor PNP L5
PZTM1101
PZTM1102
lf marking transistor
transistor marking LF
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PDF
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