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    POWER DIODES, TOSHIBA Search Results

    POWER DIODES, TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    POWER DIODES, TOSHIBA Price and Stock

    TE Connectivity TL1220R3BBBRG-POWER

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    TE Connectivity TL1220R1BBBG-POWER

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    TE Connectivity TL1220R2BBBOG-POWER

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    Thomas & Betts POWER-TOOL

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    • 1 $35792.4
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    TE Connectivity TL1220R2BBBRG-POWER

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    POWER DIODES, TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    1-1L1A

    Abstract: No abstract text available
    Text: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Power dissipation Rating P* Junction temperature Storage temperature range Unit


    Original     		PDF DF2S16FS IEC61000-4-2 1-1L1A

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


    Original     		PDF PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent

    Untitled

    Abstract: No abstract text available
    Text: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit P 150 * mW Power dissipation Junction temperature Storage temperature range Tj 150 °C


    Original     		PDF

    marking AU

    Abstract: No abstract text available
    Text: DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A5.6LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit P 150 * mW Power dissipation Junction temperature Storage temperature range Tj 150 °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Diodes for Protecting against ESD Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit P* 150 mW Power dissipation Junction temperature Storage temperature range


    Original     		PDF DF2S24FS IEC61000-4-2

    Untitled

    Abstract: No abstract text available
    Text: DF2S8.2FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S8.2FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.2 ±0.05 0.07M A Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature


    Original     		PDF

    DF2S16FS

    Abstract: No abstract text available
    Text: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm 0.07M A Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C


    Original     		PDF DF2S16FS DF2S16FS

    Untitled

    Abstract: No abstract text available
    Text: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg


    Original     		PDF DF2S24FS

    Untitled

    Abstract: No abstract text available
    Text: DF2S6.8FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.07M A Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150


    Original     		PDF IEC61000-4-2

    Untitled

    Abstract: No abstract text available
    Text: DF2S8.2FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S8.2FS Diodes for Protecting against ESD Unit in mm 0.2 ±0.05 Maximum Ratings Ta = 25°C 0.07M A Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature


    Original     		PDF IEC61000-4-2

    Untitled

    Abstract: No abstract text available
    Text: DF2S6.8FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150 °C


    Original     		PDF IEC61000-4-2

    DF2S24FS

    Abstract: No abstract text available
    Text: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm 0.07M A Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C


    Original     		PDF DF2S24FS DF2S24FS

    Untitled

    Abstract: No abstract text available
    Text: DF2S8.2FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S8.2FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150 °C


    Original     		PDF IEC61000-4-2

    Untitled

    Abstract: No abstract text available
    Text: DF3A8.2FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2FV Diodes for Protecting against ESD Symbol Rating Unit P* 150 mW Power dissipation Junction temperature Storage temperature range Tj 150 °C Tstg −55~150 °C 2 0.32±0.05 3


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150


    Original     		PDF DF2S24FS IEC61000-4-2

    Untitled

    Abstract: No abstract text available
    Text: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150


    Original     		PDF DF2S16FS IEC61000-4-2

    DF2S12FS

    Abstract: toshiba diodes 1-1l1a
    Text: DF2S12FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S12FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150


    Original     		PDF DF2S12FS IEC61000-4-2 DF2S12FS toshiba diodes 1-1l1a

    Untitled

    Abstract: No abstract text available
    Text: DF3A8.2FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2FV Diodes for Protecting against ESD Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 2 0.32±0.05 3


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DF3A6.2FV TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A6.2FV Diodes for Protecting Against ESD Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 0.4 1 2 0.32±0.05


    Original     		PDF

    toshiba zener

    Abstract: No abstract text available
    Text: DF3A8.2LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A5.6LFV Diodes for Protecting against ESD • Lead Pb - free Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DF3A3.6FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.6FV Diodes for Protecting against ESD Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 2 0.32±0.05 3


    Original     		PDF