MOSFET 50V 100A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N05 Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance and superior switching
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UTT100N05
UTT100N05
O-220
UTT100N05L-TA3-T
UTT100N05G-TA3-T
QW-R502-688
MOSFET 50V 100A
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2N7225U
Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
Text: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91549B
IRFN250
JANTX2N7225U
JANTXV2N7225U
MIL-PRF-19500/592]
2N7225U
SMD1P
IRFN250
JANTX2N7225U
JANTXV2N7225U
mosfet ir 250 n
2n7225
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2n7224U
Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
Text: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91547B
IRFN150
JANTX2N7224U
JANTXV2N7224U
MIL-PRF-19500/592]
100Volt,
2n7224U
IRFN150
JANTX2N7224U
JANTXV2N7224U
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
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UTT100P03
UTT100P03
UTT100P03L-TA3-T
UTT100P03G-TA3-T
QW-R502-697
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mosfet 1200V
Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
mosfet 1200V
cmf20120
SiC MOSFET
Cree SiC MOSFET
DMOSFET
IXDI414
DMOS SiC
JEDEC24
RB160M-60
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TLM20CT3AG
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TLM20CT3AG
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SMD1P
Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
Text: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91552B
IRFN440
JANTX2N7222U
JANTXV2N7222U
MIL-PRF-19500/596]
SMD1P
2N7222U
IRFN440
JANTX2N7222U
JANTXV2N7222U
irfn44
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2sk3271
Abstract: MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874
Text: 2SK3271-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3P Applications Switching regulators DC-DC converters
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2SK3271-01
2sk3271
MOSFET 20V 100A
2SK3271-01
100A Mosfet
POWER MOSFET
mosfet low vgs
power mosfet low vgs
30V 50A mosfet
N-Channel Silicon Power
sd 3874
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2N7236U
Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
Text: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91553C
IRFN9140
JANTX2N7236U
JANTXV2N7236U
MIL-PRF-19500/595]
2N7236U
smd 2f
IRFN9140
JANTX2N7236U
JANTXV2N7236U
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POWER MOSFET
Abstract: power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET
Text: 2SK3270-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters
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2SK3270-01
O-220AB
-51MHz
POWER MOSFET
power mosfet low vgs
2SK3270-01
mosfet amplifiers
mosfet power amplifier
mosfet low vgs
100 W POWER MOSFET
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POWER MOSFET
Abstract: mosfet power amplifier 2SK3273-01MR mosfet low vgs
Text: 2SK3273-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters
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2SK3273-01MR
O-220F
POWER MOSFET
mosfet power amplifier
2SK3273-01MR
mosfet low vgs
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CMF20120D
Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
JEDEC24
mosfet 1200V
RB160M
6N137
IXDI414
RB160M-60
DMOS SiC
electronic transformer halogen 12v
MOSFET 800V 10A
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UF740L-TA3-T
Abstract: UF740 UF740-TA3-T UF740-TF3-T 25V 1A power MOSFET TO-220
Text: UNISONIC TECHNOLOGIES CO., LTD UF740 MOSFET 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UF740 power MOSFET is designed for high voltage, high speed power switching applications such as switching power supplies, switching adaptors etc.
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UF740
O-220
UF740
O-220F
UF740L
UF740-TA3-T
UF740L-TA3-T
UF740-TF3-T
UF740L-TF3-T
UF740L-TA3-T
UF740-TA3-T
UF740-TF3-T
25V 1A power MOSFET TO-220
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F16N06
Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET
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RFD16
N06SM)
O251AA,
O252AA)
RFD16N06,
RFD16N06SM
1e-30
07e-3
19e-7)
F16N06
N06 MOSFET
TO-252AA Package mos fet
*16N06
AN9321
RFD16N06
RFD16N06SM
RFD16N06SM9A
TB334
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer
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UF640-P
18OHM,
UF640-P
O-220
QW-R502-A17
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF830
UF830L-TA3-T
UF830G-TA3-T
O-220
UF830L-TF3-T
UF830G-TF3-T
O-220F
UF830L-TF1-T
QW-R502-046
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching
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UF830Z
UF830ZL-TF3-T
UF830ZG-TF3-T
QW-R502-612
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specifications of power mosfet
Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF840
O-220
O-220F1
O-220F2
O-220F
O-262
O-263
QW-R502-047
specifications of power mosfet
N-Channel mosfet 400v to220
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
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UF840
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF840
UF840L-TA3-T
UF840G-TA3-T
UF840L-TF1-T
UF840G-TF1-T
UF840L-TF2-T
UF840G-TF2-T
UF840L-TF3-T
UF840G-TF3-T
UF840L-TF3T-T
UF840
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
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RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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UF830L
Abstract: UF830G UF830 max3103
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF830
O-220
O-220F
O-262
O-251
O-252
UF830L-TA3-T
UF830G-TA3-Tt
QW-R502-046
UF830L
UF830G
UF830
max3103
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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transistor irf510
Abstract: irf510 IRF510 MOSFET IRF510 Power Mosfet transistor
Text: IRF510 Data Sheet November 1999 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET [ /Title IRF51 0 /Subject (5.6A, 100V, 0.540 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark
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IRF510
IRF51
O220AB
IRF510
transistor irf510
IRF510 MOSFET
IRF510 Power Mosfet transistor
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