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Text: Power Transistor Arrays PUA3219 PU3219 Silicon PNP epitaxial planar type darlington For power amplification Complementary to PUA3119 (PU3119) Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)
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PU3219)
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PU3119)
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Abstract: No abstract text available
Text: Power Transistor Arrays PUA3119 PU3119 Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUA3219 (PU3219) Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)
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PU3119)
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PU3219)
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Abstract: No abstract text available
Text: Power Transistor Arrays PUA3219 PU3219 Silicon PNP epitaxial planar type darlington For power amplification Complementary to PUA3119 (PU3119) Unit: mm • Features 20.2±0.3 ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)
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PU3219)
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PU3119)
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUA3119 PU3119 Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUA3219 (PU3219) Unit: mm • Features 20.2±0.3 ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)
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PU3119)
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PU3219)
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PU3119
Abstract: PU3219 PUA3119 PUA3219
Text: Power Transistor Arrays PUA3219 PU3219 Silicon PNP epitaxial planar type darlington For power amplification Complementary to PUA3119 (PU3119) Unit: mm • Features Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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PU3219)
PUA3119
PU3119)
PU3119
PU3219
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PU3119
Abstract: PU3219 PUA3119 PUA3219
Text: Power Transistor Arrays PUA3219 PU3219 Silicon PNP epitaxial planar type darlington For power amplification Complementary to PUA3119 (PU3119) Unit: mm • Features 9.5±0.2 1.65±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO
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PU3219)
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PU3119)
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PU3219
Abstract: PUA3119 PUA3219 PU3119
Text: Power Transistor Arrays PUA3119 PU3119 Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUA3219 (PU3219) Unit: mm • Features Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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PU3119)
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PU3219)
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PU3119
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PU3119
Abstract: PU3219 PUA3119 PUA3219
Text: Power Transistor Arrays PUA3119 PU3119 Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUA3219 (PU3219) Unit: mm • Features 9.5±0.2 1.65±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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PUA3119
PU3119)
PUA3219
PU3219)
PU3119
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PUA3219
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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