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    Abstract: No abstract text available
    Text: b7E D SAMSUNG ELECTRONICS INC • 7Sb414E 001774E 156 KM79C86 CMOS SRAM 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 bit Synchronous Static Ran­


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    PDF 7Sb414E 001774E KM79C86 KM79C86 Q0177SQ KM79C86_ GD177S1