BFY196
Abstract: No abstract text available
Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • Space Qualification Expected 1998
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BFY196
Q62702F1684
QS9000
BFY196
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A03 transistor
Abstract: microwave transducer BFY196 BFY 36 transistor
Text: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz
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Original
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PDF
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Q62702F1684
BFY196
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
microwave transducer
BFY 36 transistor
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Untitled
Abstract: No abstract text available
Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 6,5 GHz F = 3 dB at 2 GHz 4
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Original
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PDF
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BFY196
BFY196
Q62702F1684
QS9000
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