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    k06t60

    Abstract: igbt k06t60 600V 300A igbt dc to dc power supply Q67040S4679 IKP06N60T IKB06N60T datasheet ic 7822 pspice high frequency igbt diode 400V 6A marking diode 6a
    Text: IKB06N60T IKP06N60T TrenchStop series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original
    IKB06N60T IKP06N60T P-TO-220-3-1 O-220AB) Oct-04 k06t60 igbt k06t60 600V 300A igbt dc to dc power supply Q67040S4679 IKP06N60T IKB06N60T datasheet ic 7822 pspice high frequency igbt diode 400V 6A marking diode 6a PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original
    B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    k06t60

    Abstract: igbt k06t60 IKP06N60T Q67040S4679
    Text: IKP06N60T p TrenchStop series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original
    IKP06N60T PG-TO-220-3-1 O-220AB) k06t60 igbt k06t60 Q67040S4679 PDF