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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet PA2464T1Q R07DS0189EJ0100 Rev.1.00 Dec 06, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for	Original	PA2464T1Q R07DS0189EJ0100 PA2464T1Q	PDF

Catalog Datasheet

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Untitled

Abstract: No abstract text available
Text: Preliminary Data Sheet PA2464T1Q R07DS0189EJ0100 Rev.1.00 Dec 06, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for

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PA2464T1Q R07DS0189EJ0100 PA2464T1Q

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